2SK4125
No. A0747-1/7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3P-3L
15.6 1.5
0.6
2.0
1.0
123
18.4
10.0
16.76
5.45 5.45
3.2 7.0
3.5 5.0
19.9
20.0
3.0
4.8
13.6
1.4
Features
• ON-resistance RDS(on)=0.47Ω (typ.)
• Input capacitance Ciss=1200pF (typ.)
• 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID17 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 52 A
Allowable Power Dissipation PD2.5 W
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
170 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *2 EAS 78.8 mJ
Avalanche Current *3 IAV 17 A
*1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=17A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensions
unit : mm (typ)
7539-002
62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701
SANYO Semiconductors
DATA SHEET
2SK4125
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Ordering number : ENA0747B
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking Electrical Connection
K4125
LOT No.
1
3
2
2SK4125-1E
2SK4125
No. A0747-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS V
DS=480V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs |VDS=10V, ID=8.5A 4.5 9 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=7A, VGS=10V 0.47 0.61 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 50 pF
Turn-ON Delay Time td(on)
See Fig.2
26.5 ns
Rise Time tr 82 ns
Turn-OFF Delay Time td(off) 145 ns
Fall Time tf52 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=17A 46 nC
Gate-to-Source Charge Qgs 8.3 nC
Gate-to-Drain “Miller” Charge Qgd 26.7 nC
Diode Forward Voltage VSD IS=17A, VGS=0V 1.0 1.3 V
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK4125-1E TO-3P-3L 30pcs./magazine Pb Free
50Ω
≥50Ω
RG
VDD
L
2SK4125
10V
0V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
ID -- VDS ID -- VGS
IT11753 IT11754
0
0
30
35
25
20
15
10 3052515 20
10
5
0
40
30
35
25
20
15
10
5
020181641221068 14
15V
Tc=25°CVDS=20V
VGS=5V
6V
Tc= --25°C
25°C
75°C
8V
10V
PW=10μs
P.G RGS=50Ω
G
S
D
ID=8.5A
RL=23.5Ω
VDD=200V
VOUT
2SK4125
VIN
10V
0V
VIN
D.C.≤0.5%
2SK4125
No. A0747-3/7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, | yfs | -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
| yfs | -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT11755 IT11756
--50 --25 0 25 50 75 100 125 150
0
1.4
0.4
1.0
0.6
0.2
1.2
0.8
IT11758
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
5
3
2
7
5
3
2
2
1.0
7
5
3
IT11757
25°C
--25
°
C
Tc=75°C
0.1 23 57 23
1.0 23 5 5710
1.0
10
2
3
5
7
5
7
3
2
3VDS=10V
Tc= --25°C
75°C
VGS=0V
3
0
2.0
1.8
1.0
1.4
151359711
0.6
0.2
1.2
1.6
0.8
0.4
ID=7A
Tc=75°C
25°C
--25°C
ID=7A, VGS=10V
SW Time -- ID
IT11759
10
100
3
2
2
5
7
1000
3
5
7
0.1 1.0
23 5 23 572 10
357
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
1000
5
3
2
7
5
3
2
10000
7
5
3
2
5052535451510 30 4020
IT11760
f=1MHz
Ciss
Coss
Crss
25
°
C
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
IT12416
0
0
1
2
3
4
5
6
7
8
5040
10
9
10 20 30
VDS=200V
ID=17A
IT16834
0.01
0.1
1.0
10μs
100μs
100ms
10ms
1ms
DC operation
0.1 1.0 10 100 23 5723 5723 5723 57 1000
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
Operation in
this area is
limited by RDS(on).
IDP=52A(PW
≤
10μs)
ID=17A
Tc=25°C
Single pulse
2SK4125
No. A0747-4/7
0
020 40 60 80 100 120
3.0
2.5
140 160
2.0
1.5
1.0
0.5
IT12240
0
020 40 60 80 100 140120
100
80
120
140
160
170
180
60
40
20
200
160
IT12241
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Ta PD -- Tc
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
2SK4125
No. A0747-5/7
Magazine Specifi cation
2SK4125-1E
2SK4125
No. A0747-6/7
Outline Drawing
2SK4125-1E
Mass (g) Unit
1.8
* For reference
mm
2SK4125
No. A0747-7/7PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the 2SK4125 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
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party's intellectual property rights which has resulted from the use of the technical information and products
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