SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$187 Unit in mm +05 25-83 FEATURES: +025 Small Package SOT-2 3MOD p57 018 ms Low Forward Voltage VF=0.92V (Typ. ) ape | ai | 2 Fast Reverse Recovery Time trr=l.6ns(Typ.) 3 o 3 4 4] o Small Total Capacitance CT=2.2pF (Typ. ) 3 a 3 3 EE ' r{_| t cs a ao 3d No +i MAXIMUM RATINGS (Ta=25C) ST ' L a +t 3 CHARACTERISTIC SYMBOL RATING UNIT | | r 4 Maximum (Peak) Reverse Voltage VRM 85 V 5 eq 5 Reverse Voltage VR 80 Vv PRL Maximum (Peak) Forward Current TEM 300 mA 1c Average Forward Current To 100 mA Loc Surge Current (10ms) IESM 2 A 2 CATHODE Power Dissipation P 150 mW & ANODE > 5 JBDEC - Junction Temperature Tj 125 c RIAJ SC59 Storage Temperature Range Tstg -55~ 125 C TOSHIBA 1-3a1D Weight 0.0l2g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP MAX. | UNIT VF(1) Ip=lmA - 0.61 - Forward Voltage VF(2) Tp=10mA - 0.74 - v VF(3) Tp=100mA - 0.92 |1.20 Reverse Current IR Vp=80V - - Q.5 na Total Capacitance CT Vp=0, f=1MH2 - 2.2 4.0 pF Reverse Recovery Time trr Ip=lOmA, Fig.J - 1.6 4.0 ns Marking A 81$$187 ip ~ VF IR - Vv 10 R R 3S $ fd & & mm Lon H & 10 & & @ DR dD oO i QD z g x fo = 1 ed 1e- 5 5 me om 10 10 9 20 40 60 80 4 6 8 LO 1.2 FORWARD VOLTAGE Vp () REVERSE VOLTAGE Vp (V) C7 - V T R trr Ip 1 ~ 4 ~ 2 i. = 8 oO sod iz A & B@ mz oO a a o7 5 BE eS a a << 6 % > 4 a a a oO a 05 ag 1 3 10 30 100 O21 as 1 3 10 30 100 REVERSE VOLTAGE Vy (Vv) FORWARD CURRENT Ip (mA) Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT WAVEFORM OUTPUT WAVEFORM rypur COl#R DUT 0 OUTPUT 7 Ip=10mA OSCILLOSCOPE 6 Ad G x (Ryy=500) Q1 Ip = Q 6V 2 Ip 50ns PULSE GENERATOR ter (Roy p=500) 1126