SEMICONDUCTOR sans TECHNICAL DATA \ @ 2NB6gA 2N4453, CRYSTALONCS PNP Silicon 2805 Veterans Highway ; . Suite 14 Small-Signal Transistor nL Ronkonkoria, N.Y. 11779 . ..designed for high-speed switching applications. . Gs 4 2N869AJAN Device is on Product Discontinuance Notice 4 MAXIMUM RATINGS a Rating Symbol Value Unk Collector-Emitter Voltage VCEO 18 Vdc Coliector-Base Voltage Vceo 25 Vde Emitter-Base Voltage VEeBO 5.0 Vde Collector Current Continuous lc 200 mAde Total Davice Dissipation Pr @Ta=25'C 2N869A 360 mw 2na4sa 7 mwrc Derete above 2c oon 171 CASE 22-03, STYLE 1 TO-206AA (TO-18) Operating Junction and Ty. Tstg ~65 to 200 c 2NO6DA Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tq - 25C unless otherwise noted.) Characteristic symbol [ Min | Max Unit OFF CHARACTERISTICS : Collectcr-Emitter Breakdown Voltage! 1) V(BR)CEO 18 _ Vde (Ic = 10 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage(") V(BRICES 25 - Vde (lg = 10 pAdc, Vge = 0) Collector-Base Breakdown Voltage ViBR}CBO 25 _ Vde {ic = 10 pAde, ig = 0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 _ Vde (IE = 10 pAde, Ic = 0) Collector Cutoff Current lcES bAde (VCE = 15 Vde. Vag = 0) = 0.01 (Voce = 15 Vide, Veg = 0. Ta = 150C) - 10 CASE 26-03, STYLE 1 TO-206AB (TO-46) Emitter Cutoff Current fEBO _ 0.01 Adc 206AB (7 ) Hi 2N4453 (Veg = 3.5 Vac. Ic = 0) {1 Pulsed Pulse Width 250 to 350 pis. Duty Cycle 1.0 to 2 0% (continued)2@ 2N869AJAN, 2N4453JAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic [ Symbot [ain Max unit ON CHARACTERISTICS DC Current Gain hee a (i = 10 mAdc, VceE = 0.3 Vde) 30 _ {ic = 10 mAde, VcE = 5.0 Vde) 40 120 (lg = 30 mAdc, Vg = 0.5 Ve} 40 120 {Ig = 100 mAde, VoE = 1.0 Vdc)(") 25 _ {Ip = 30 mAdc, Vog = 0.5 Vie, Ta = -55C) 7 - Cotlector-Emitter Saturation Voltage VcE(sat) Vde (Ig = 10 mAdge, Ig = 1.0 mAdc) = 0.15 (ic = 100 mAdc. ig = 10 mAdc) ad 0.5 Base-Emitier Saturation Voltage VBE(sat) Vide (Ic = 10 mAdc. Ip = 1.0 mAde) 07 0.98 (It = 100 mAdc, Ig = 10 mAde) = 17 SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 6.0 pF (Vp = 5.0 Vde. Ie = 0, f = 0.1 to 1.0 MHz) input Capacitance Cibo - 60 pF (Vcp = 0.5 Vde, ig = 0. # = 0.1 to 1.0 MHz) Current Gain Nte a (Ig = 1.0 mAdc, VcE = 5.0 Vde) 30 a (Ig 5.0 mAdc, VoE = 5.0 Vac) 30 - Smali-Signal Current Transter Ratio, Magnitude inte! 4.0 10 a (Ic = 10 mAde, VE = 15 Vac, t = 100 MHz) Noise Figure NF _ 60 aB (I = 0.5 mAdc, Vog = 5.0 Vdc, Rg = 1.0 kohm f= 1.0 MHz. BW < 200 kHz) SWITCHING CHARACTERISTICS (See Figure 36) @ (Vcc = 2.0 Ve, Ic =.30 mAdc, Ig = 1.5 mAde) Turn-On Time tion) _ 50 ns Turn-Ott Time oft) _ 80 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vcog = 12 Vde Py = 360 mW 2NS69A, 300 mW 2N4453 Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoft Current ices a 10 nAdc (Voce = 18 Vde) DC Current Gain hFE 40 120 a (Ig = 10 mAdc, VoE = 5.0 Vdc) . Oeita from Pre-Burn-in Meaaured Values Min Max Deita Collector Cutoff Current AICES a +100 % of Initial Value or 45.0 ee whichever is greater Oetta DC Current Gain ANEE a +15 % of initial Value (1) Pulsed Pulse Width 280 ta 360 us. Duty Cycls 10 10 2.0%