TLP137 TOSHIBA Photocoupler GaAs IRed & Photo-Transistor TLP137 Office Machine Programmable Controllers AC / DC-Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP137 is a small outline coupler, suitable for surface mount assembly. TLP137 consists of a gallium arsenide infrared emitting diode, optically coupled to a photo transistor, and provides high CTR at low input current. TLP137 base terminal is for the improvement of speed, reduction of dark current, and enable operation. l l l l l Collector-emitter voltage: 80V(min.) Current transfer ratio: 100%(min.) Rank BV: 200%(min.) Isolation voltage: 3750Vrms(min.) UL recognized: UL1577, file No. E67349 Current transfer ratio Classification TOSHIBA 11-4C2 Weight: 0.09 g Current Transfer Ratio (min.) Ta = 25C Ta =-25~75C IF = 1mA IF = 0.5mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V Marking Of Classification Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, Blank Pin Configurations (top view) 1 6 (Note) Application type name for certification test, please use standard product type name, i.e. TLP137 (BV): TLP137 5 3 4 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 1 2002-09-25 TLP137 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 50 mA IF / C -0.7 mA / C Peak forward current (100s pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 C Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW PC / C -1.5 mW / C Forward current Detector LED Forward current derating (Ta 53C) Power dissipation derating (Ta 25C) Tj 125 C Storage temperature range Junction temperature Tstg -55~125 C Operating temperature range Topr -55~100 C Lead soldering temperature (10s) Tsol 260 C Total package power dissipation PT 200 mW PT / C -2.0 mW / C BVS 3750 Vrms Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1min., RH 60%) (Note 1) (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. 2 2002-09-25 TLP137 Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V 10 A Capacitance CT V = 0, f = 1MHz 30 pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5mA 80 V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1mA 7 V Collector-base breakdown voltage V(BR)CBO IC = 0.1mA 80 V Emitter-base breakdown voltage V(BR)EBO IE = 0.1mA 7 V VCE = 48V 10 100 nA VCE = 48V, Ta = 85C 2 50 A Collector dark current ICEO Collector dark current ICER VCE = 48V, Ta = 85C RBE = 1M 0.5 10 A Collector dark current ICBO VCB = 10V 0.1 nA DC forward current gain hFE VCE = 5V, IC = 0.5mA 1000 Capacitance (collector to emitter) CCE V= 0, f = 1MHz 12 pF Unit Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Low input CTR Base photo-current Collector-emitter saturation voltage Off-state collector current Symbol IC / IF IC / IF(low) IPB VCE(sat) Test Condition Min. Typ. Max. IF = 1mA, VCE = 0.5V 100 1200 200 1200 50 100 IF = 1mA, VCB = 5V 5 IC = 0.5mA, IF = 1mA 0.4 IC = 1mA, IF = 1mA 0.2 0.4 10 Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Rank BV IC(off) V F = 0.7V, VCE = 48V 3 % % A V A 2002-09-25 TLP137 Coupled Electrical Characteristics (Ta = -25~75C) Characteristic Symbol Current transfer ratio Low input CTR Test Condition Min. Typ. Max. 50 100 50 100 Min. Typ. Max. Unit 0.8 pF 10 3750 AC, 1second, in oil 10000 DC, 1 minute, in oil 10000 Vdc Min. Typ. Max. Unit IF = 1mA, VCE = 0.5V IC / IF Rank BV IF = 0.5mA, VCE = 1.5V IC / IF(low) Rank BV Unit % % Isolation Characteristics (Ta = 25C) Characteristic Symbol Capacitance (input to output) Test Condition CS Isolation resistance VS = 0, f = 1MHz RS 10 V = 500V 510 AC, 1minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25C) Characteristic Symbol Test Condition Rise time tr 8 Fall time tf 8 10 8 10 50 300 12 30 100 Turn-on time ton Turn-off time toff Turn-on time tON Storage time tS Turn-off time tOFF Turn-on time tON Storage time tS Turn-off time tOFF VCC = 10V, IC = 2mA RL = 100 (Fig.1) RL = 4.7 k RBE = OPEN VCC = 5 V, IF = 1.6mA (Fig.1) RL = 4.7k RBE = 470k VCC = 5 V, IF = 1.6mA s s s Fig. 1 Switching time test circuit IF VCC IF tS RL RBE VCE 4 VCE 4.5V 0.5V tON tOFF VCC 2002-09-25 TLP137 PC - Ta 200 80 160 Allowable collector power dissipation PC (mw) Allowable forward current IF (mA) IF - Ta 100 60 40 20 0 20 0 40 20 80 60 80 40 0 20 120 100 120 0 Ambient temperature Ta (C) 40 20 PULSE WIDTH 100 ms IF (mA) 300 Forward current Pulse forward current IFP (mA) 500 100 50 30 3 102 101 3 Ta = 25C 50 1000 103 3 30 10 5 3 1 0.5 0.3 0.1 0.6 100 0.8 Duty cycle ratio DR 1.0 1.2 Forward voltage VF / Ta IF 1.4 VF 1.6 1.8 (V) IFP - VFP 1000 2.8 (mA) 2.4 IFP 3.2 Pulse forward current Forward voltage temperature coefficient VF / Ta(mV / C) 120 IF - VF 100 Ta = 25C 10 3 100 Ambient temperature Ta (C) IFP - DR 3000 80 60 2.0 1.6 1.2 0.8 500 300 100 50 30 10 Pulse width 10 ms 5 Repetitive 3 frequency = 100 Hz Ta = 25C 0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 1 0.6 30 50 (mA) 1.0 1.4 1.8 2.2 2.6 3.0 Pulse forward voltage VFP (V) 5 2002-09-25 TLP137 IC - VCE 4 IC - VCE 4 Ta = 25C Ta = 25C (mA) 3 Collector current Collector Current 2 0.6mA 0.5mA 1 IF = 1.0mA 3 IC 0.8mA IC (mA) IF = 1.0mA 0.4mA 0.8mA 2 0.6mA 0.5mA 1 0.4mA 0.2mA 0 0 2 4 6 Collector-emitter voltage 0.2mA 8 0 0 10 0.2 VCE(V) 0.4 Collector-emitter voltage VCE 1.0 (V) 1000 Current transfer ratio IC / IF (%) 30 Collector current IC (mA) 0.8 IC / IF - IF IC - IF 50 10 5 3 0.6 Sample A 1 Ta = 25C 0.5 VCE = 5V 0.3 VCE = 1.5V VCE = 0.5V Sample B 0.1 Ta = 25C 500 Sample A 300 Sample B 100 VCE = 5V VCE = 1.5V VCE = 0.5V 50 0.05 0.03 0.1 0.5 0.3 1 Forward current 3 IF 5 30 0.1 10 0.3 0.5 Forward current (mA) IC - IF at RBE (A) 10 VCC IF IPB IC (mA) 10 (mA) Ta=25C VCE=5V A RBE RBE Base photo current 3 Collector current IF 5 IPB - IF Ta=25C 1 0.5 0.3 RBE= 0.1 0.1 3 300 30 5 1 500k 0.3 0.5 100k 1 Forward current 50k 3 5 100 30 IF (mA) VCB VCB=0V 10 VCB=5V A 3 1 0.3 0.1 0.1 10 IF 0.3 0.5 1 Forward current 6 3 5 10 IF (mA) 2002-09-25 TLP137 VCE(sat) - Ta ICEO - Ta 10 1 0.16 IF = 1mA IC = 0.5mA ID Collector dark current Collector -emitter saturation voltage VCE (sat) (V) 100 24V VCE=48V (ICEO) (A) 0.14 10V 10 -1 5V 10-2 0.12 0.10 0.08 0.06 0.04 0.02 0 40 0 20 20 40 60 80 100 Ambient temperature Ta (C) 10-3 10-4 20 0 40 60 80 100 120 Ambient temperature Ta (C) Switching Time - RL IC - Ta 300 30 IF = 2mA 10 tOFF Switching time (s) Collector current IC (mA) VCE=1.5V VCE=0.5V 5 1mA 3 0.5mA 1 100 tS 50 30 tON 10 0.5 0.2mA 0.3 5 Ta = 25C 3 IF=1.6mA VCC=5V 0.1 RBE=470k 0.05 1 20 0 20 40 60 Ambient temperature Ta 80 100 1 (C) 3 5 10 30 50 100 Load resistance RL (k) 7 2002-09-25 TLP137 Switching Time - RBE Switching time (s) 500 5000 Ta = 25C Ta = 25C 3000 IF=1.6mA VCC=5V IF=1.6mA VCC=5V 300 RL=4.7k tOFF 100 Swithing time (s) 1000 Switching Time - RL tS N 50 30 tOFF 1000 500 300 tS N 100 tON 10 50 30 5 tON 3 10 1 100k 300k 1M 3M Base-emitter resistance RBE 1 () 3 5 10 30 50 100 Load resistance RL (k) 8 2002-09-25 TLP137 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 9 2002-09-25