RHRG50100 Data Sheet Title HR 010 bt A, 00V pert ode) utho eyrds A, 00V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3106.3 50A, 1000V Hyperfast Diode Features The RHRG50100 is a hyperfast diode with soft recovery characteristics (trr < 75ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <75ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. * Avalanche Energy Rated * Switching Power Supplies Formerly developmental type TA49066. * Power Switching Circuits * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V * Planar Construction Applications * General Purpose Ordering Information PART NUMBER * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC PACKAGE BRAND Packaging JEDEC STYLE TO-247 RHRG50100 TO-247 RHRG50100 ANODE NOTE: When ordering, use the entire part number. Symbol CATHODE (BOTTOM SIDE METAL) CATHODE K A Absolute Maximum Ratings TC = 25oC RHRG50100 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1000 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1000 V 1000 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 60oC) 50 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 100 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 500 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 40 mJ -65 to 175 oC (c)2001 Fairchild Semiconductor Corporation RHRG50100 Rev. A RHRG50100 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 50A - - 3.0 V IF = 50A, TC = 150oC - - 2.5 V VR = 1000V - - 250 A VR = 1000V, TC = 150oC - - 3.0 mA IF = 1A, dIF/dt = 100A/s - - 75 ns IF = 50A, dIF/dt = 100A/s - - 95 ns ta IF = 50A, dIF/dt = 100A/s - 54 - ns tb IF = 50A, dIF/dt = 100A/s - 32 - ns - - 1.0 oC/W VF IR trr RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 3000 150 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 175oC 1000 175oC 100 100oC 10 25oC 100 100oC 10 1 25oC 0.1 0.01 1 0 0.5 1 1.5 2 2.5 3 3.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2001 Fairchild Semiconductor Corporation 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRG50100 Rev. A RHRG50100 Typical Performance Curves IF(AV) , AVERAGE FORWARD CURRENT (A) (Continued) 100 t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 100A/s trr 80 60 ta 40 tb 20 0 1 10 50 DC 40 30 SQ. WAVE 20 10 50 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS IMAX = 1.4A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRG50100 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H