DS2431G+ - Hytronics - Datasheet.Live

DS2431

1024-Bit, 1-Wire EEPROM

________________________________________________________________

Maxim Integrated Products

19-4675; Rev 11; 1/12

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

General Description

The DS2431 is a 1024-bit, 1-Wire®EEPROM chip orga-

nized as four memory pages of 256 bits each. Data is

written to an 8-byte scratchpad, verified, and then

copied to the EEPROM memory. As a special feature, the

four memory pages can individually be write protected or

put in EPROM-emulation mode, where bits can only be

changed from a 1 to a 0 state. The DS2431 communi-

cates over the single-conductor 1-Wire bus. The commu-

nication follows the standard 1-Wire protocol. Each

device has its own unalterable and unique 64-bit ROM

registration number that is factory lasered into the chip.

The registration number is used to address the device in

a multidrop, 1-Wire net environment.

Applications

Accessory/PCB Identification

Medical Sensor Calibration Data Storage

Analog Sensor Calibration Including IEEE

P1451.4 Smart Sensors

Ink and Toner Print Cartridge Identification

After-Market Management of Consumables

Features

♦1024 Bits of EEPROM Memory Partitioned Into

Four Pages of 256 Bits

♦Individual Memory Pages Can Be Permanently

Write Protected or Put in EPROM-Emulation Mode

(“Write to 0”)

♦Switchpoint Hysteresis and Filtering to Optimize

Performance in the Presence of Noise

♦IEC 1000-4-2 Level 4 ESD Protection (±8kV

Contact, ±15kV Air, Typical)

♦Reads and Writes Over a Wide Voltage Range

from 2.8V to 5.25V from -40°C to +85°C

♦Communicates to Host with a Single Digital

Signal at 15.4kbps or 125kbps Using 1-Wire

Protocol

♦Also Available as Automotive Version Meeting

AEC-Q100 Grade 1 Qualification Requirements

(DS2431-A1; Refer to the IC Data Sheet for

Details)

Ordering Information

RPUP

VCC

μC

GND

DS2431

Typical Operating Circuit

Note: The leads of TO-92 packages on tape and reel are

formed to approximately 100-mil (2.54mm) spacing. For

details, refer to the package outline drawing.

Denotes a lead(Pb)-free/RoHS-compliant package.

T&R = Tape and reel.

EP = Exposed pad.

PART TEMP RANGE PIN-PACKAGE

DS2431+ -40°C to +85°C 3 TO-92

DS2431+T&R -40°C to +85°C 3 TO-92

DS2431P+ -40°C to +85°C 6 TSOC

DS2431P+T&R -40°C to +85°C 6 TSOC

DS2431G+ -40°C to +85°C 2 SFN

DS2431G+T&R -40°C to +85°C 2 SFN

DS2431Q+T&R -40°C to +85°C 6 TDFN-EP* (2.5k pcs)

DS2431X-S+ -40°C to +85°C 3x3 UCSPR (2.5k pcs)

DS2431X+ -40°C to +85°C 3x3 UCSPR (10k pcs)

1-Wire is a registered trademark of Maxim Integrated Products, Inc.

Pin Configurations appear at end of data sheet.

DS2431

1024-Bit, 1-Wire EEPROM

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(TA= -40°C to +85°C.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

IO Voltage Range to GND .......................................-0.5V to +6V

IO Sink Current ...................................................................20mA

Operating Temperature Range ...........................-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-55°C to +125°C

Lead Temperature (excluding UCSP, soldering, 10s).....+300°C

Soldering Temperature (reflow)

TO-92 ............................................................................+250°C

AIl other packages, excluding SFN ..............................+260°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

IO PIN: GENERAL DATA

1-Wire Pullup Voltage VPUP (Note 2) 2.8 5.25 V

1-Wire Pullup Resistance RPUP (Notes 2, 3) 0.3 2.2 k

Input Capacitance CIO (Notes 4, 5) 1000 pF

Input Load Current ILIO pin at VPUP 0.05 6.7 μA

High-to-Low Switching Threshold VTL (Notes 5, 6, 7) 0.5 VPUP -

1.8 V

Input Low Voltage VIL (Notes 2, 8) 0.5 V

Low-to-High Switching Threshold VTH (Notes 5, 6, 9) 1.0 VPUP -

1.0 V

Switching Hysteresis VHY (Notes 5, 6, 10) 0.21 1.70 V

Output Low Voltage VOL At 4mA (Note 11) 0.4 V

Standard speed, RPUP = 2.2k 5

Overdrive speed, RPUP = 2.2k 2

Recovery Time

(Notes 2,12) tREC Overdrive speed, directly prior to reset

pulse; RPUP = 2.2k5

μs

Standard speed 0.5 5.0

Rising-Edge Hold-Off Time

(Notes 5, 13) tREH Overdrive speed Not applicable (0) μs

Standard speed 65

Time Slot Duration

(Notes 2, 14) tSLOT Overdrive speed 8 μs

IO PIN: 1-Wire RESET, PRESENCE-DETECT CYCLE

Standard speed 480 640

Reset Low Time (Note 2) tRSTL Overdrive speed 48 80

μs

Standard speed 15 60

Presence-Detect High Time tPDH Overdrive speed 2 6

μs

Standard speed 60 240

Presence-Detect Low Time tPDL Overdrive speed 8 24 μs

Standard speed 60 75

Presence-Detect Sample Time

(Notes 2, 15) tMSP Overdrive speed 6 10 μs

DS2431

1024-Bit, 1-Wire EEPROM

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(TA= -40°C to +85°C.) (Note 1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

IO PIN: 1-Wire WRITE

Standard speed 60 120

Overdrive speed, VPUP > 4.5V 5 15.5

Write-Zero Low Time

(Notes 2, 16, 17) tW0L

Overdrive speed 6 15.5

μs

Standard speed 1 15

Write-One Low Time

(Notes 2, 17) tW1L Overdrive speed 1 2

μs

IO PIN: 1-Wire READ

Standard speed 5 15 - 

Read Low Time

(Notes 2, 18) tRL Overdrive speed 1 2 - μs

Standard speed tRL +  15

Read Sample Time

(Notes 2, 18) tMSR Overdrive speed tRL +  2 μs

EEPROM

Programming Current IPROG (Notes 5, 19) 0.8 mA

Programming Time tPROG (Notes 20, 21) 10 ms

At +25°C 200k

Write/Erase Cycles (Endurance)

(Notes 22, 23) NCY At +85°C (worst case) 50k



Data Retention

(Notes 24, 25, 26) tDR At +85°C (worst case) 40 Years

Note 1: Limits are 100% production tested at TA= +25°C and/or TA= +85°C. Limits over the operating temperature range and rel-

evant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.

Note 2: System requirement.

Note 3: Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery times.

The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times. For more

heavily loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be required.

Note 4: Maximum value represents the internal parasite capacitance when VPUP is first applied. If a 2.2kΩresistor is used to pull

up the data line, 2.5µs after VPUP has been applied, the parasite capacitance does not affect normal communications.

Note 5: Guaranteed by design, characterization, and/or simulation only. Not production tested.

Note 6: VTL, VTH, and VHY are a function of the internal supply voltage, which is a function of VPUP, RPUP, 1-Wire timing, and

capacitive loading on IO. Lower VPUP, higher RPUP, shorter tREC, and heavier capacitive loading all lead to lower values of

VTL, VTH, and VHY.

Note 7: Voltage below which, during a falling edge on IO, a logic 0 is detected.

Note 8: The voltage on IO must be less than or equal to VILMAX at all times the master is driving IO to a logic 0 level.

Note 9: Voltage above which, during a rising edge on IO, a logic 1 is detected.

Note 10: After VTH is crossed during a rising edge on IO, the voltage on IO must drop by at least VHY to be detected as logic 0.

Note 11: The I-V characteristic is linear for voltages less than 1V.

Note 12: Applies to a single device attached to a 1-Wire line.

Note 13: The earliest recognition of a negative edge is possible at tREH after VTH has been reached on the preceding rising edge.

Note 14: Defines maximum possible bit rate. Equal to tW0LMIN + tRECMIN.

Note 15: Interval after tRSTL during which a bus master is guaranteed to sample a logic 0 on IO if there is a DS2431 present.

Minimum limit is tPDHMAX; maximum limit is tPDHMIN + tPDLMIN.

Note 16: Numbers in bold are not in compliance with legacy 1-Wire product standards. See the

Comparison Table

Note 17: εin Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to VTH. The actual

maximum duration for the master to pull the line low is tW1LMAX + tF- εand tW0LMAX + tF- ε, respectively.

Note 18: δin Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to the input-high

threshold of the bus master. The actual maximum duration for the master to pull the line low is tRLMAX + tF.

Note 19: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO during the programming interval

should be such that the voltage at IO is greater than or equal to VPUPMIN. If VPUP in the system is close to VPUPMIN, a low-

impedance bypass of RPUP, which can be activated during programming, may need to be added.

Note 20: Interval begins tREHMAX after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad

sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the current drawn by

the device has returned from IPROG to IL.

Note 21: tPROG for units branded version “A1” is 12.5ms. tPROG for units branded version “A2” and later is 10ms.

Note 22: Write-cycle endurance is degraded as TAincreases.

Note 23: Not 100% production tested; guaranteed by reliability monitor sampling.

Note 24: Data retention is degraded as TAincreases.

Note 25: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the

data sheet limit at operating temperature range is established by reliability testing.

Note 26: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem-

peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.

COMPARISON TABLE

LEGACY VALUES DS2431 VALUES

STANDARD SPEED

(μs)

OVERDRIVE SPEED

(μs)

STANDARD SPEED

(μs)

OVERDRIVE SPEED

(μs)

PARAMETER

MIN MAX MIN MAX MIN MAX MIN MAX

tSLOT (including tREC) 61 (undefined) 7 (undefined) 65* (undefined) 8* (undefined)

tRSTL 480 (undefined) 48 80 480 640 48 80

tPDH 15 60 2 6 15 60 2 6

tPDL 60 240 8 24 60 240 8 24

tW0L 60 120 6 16 60 120 6 15.5

DS2431

1024-Bit, 1-Wire EEPROM

4 _______________________________________________________________________________________

Intentional change; longer recovery time requirement due to modified 1-Wire front-end.

Note: Numbers in bold are not in compliance with legacy 1-Wire product standards.

Pin Description

TSOC TO-92 TDFN-EP SFN UCSPR NAME FUNCTION

3, 4, 5, 6 3 1, 4, 5, 6 — A2, A3, C2,

C3 N.C. Not Connected

2 2 2 1 C1 IO

1-Wire Bus Interface. Open-drain signal

that requires an external pullup resistor.

1 1 3 2 A1 GND Ground Reference

— — EP — — EP

Exposed Pad. Solder evenly to the

board’s ground plane for proper

operation. Refer to Application Note

3273: Exposed Pads: A Brief

Introduction for additional information.

DS2431

1024-Bit, 1-Wire EEPROM

_______________________________________________________________________________________ 5

Detailed Description

The DS2431 combines 1024 bits of EEPROM, an

8-byte register/control page with up to 7 user read/write

bytes, and a fully featured 1-Wire interface in a single

chip. Each DS2431 has its own 64-bit ROM registration

number that is factory lasered into the chip to provide a

guaranteed unique identity for absolute traceability.

Data is transferred serially through the

1-Wire protocol, which requires only a single data lead

and a ground return. The DS2431 has an additional

memory area called the scratchpad that acts as a

buffer when writing to the main memory or the register

page. Data is first written to the scratchpad from which

it can be read back. After the data has been verified, a

Copy Scratchpad command transfers the data to its

final memory location. The DS2431 applications include

accessory/PCB identification, medical sensor calibra-

tion data storage, analog sensor calibration including

IEEE P1451.4 smart sensors, ink and toner print car-

tridge identification, and after-market management of

consumables.

Overview

The block diagram in Figure 1 shows the relationships

between the major control and memory sections of the

DS2431. The DS2431 has four main data components:

64-bit lasered ROM, 64-bit scratchpad, four 32-byte

pages of EEPROM, and a 64-bit register page.

MEMORY

FUNCTION

CONTROL UNIT

DATA MEMORY

4 PAGES OF

256 BITS EACH

CRC-16

GENERATOR

64-BIT

SCRATCHPAD

1-Wire

FUNCTION CONTROL

64-BIT

LASERED ROM

PARASITE POWER

64 BITS

DS2431

Figure 1. Block Diagram

DS2431

1024-Bit, 1-Wire EEPROM

6 _______________________________________________________________________________________

The hierarchical structure of the 1-Wire protocol is

shown in Figure 2. The bus master must first provide

one of the seven ROM function commands: Read ROM,

Match ROM, Search ROM, Skip ROM, Resume,

Overdrive-Skip ROM, or Overdrive-Match ROM. Upon

completion of an Overdrive-Skip ROM or Overdrive-

Match ROM command byte executed at standard

speed, the device enters overdrive mode where all

subsequent communication occurs at a higher speed.

The protocol required for these ROM function com-

mands is described in Figure 9. After a ROM function

command is successfully executed, the memory func-

tions become accessible and the master can provide

any one of the four memory function commands. The

protocol for these memory function commands is

described in Figure 7. All data is read and written

least significant bit first.

64-Bit Lasered ROM

Each DS2431 contains a unique ROM code that is 64

bits long. The first 8 bits are a 1-Wire family code. The

next 48 bits are a unique serial number. The last 8 bits

are a cyclic redundancy check (CRC) of the first 56 bits.

See Figure 3 for details. The 1-Wire CRC is generated

using a polynomial generator consisting of a shift regis-

ter and XOR gates as shown in Figure 4. The polynomial

is X8+ X5+ X4+ 1. Additional information about the

1-Wire CRC is available in Application Note 27:

Understanding and Using Cyclic Redundancy Checks

with Maxim iButton

Products

The shift register bits are initialized to 0. Then, starting

with the least significant bit of the family code, one bit

at a time is shifted in. After the 8th bit of the family code

has been entered, the serial number is entered. After

the last bit of the serial number has been entered, the

shift register contains the CRC value. Shifting in the 8

bits of the CRC returns the shift register to all 0s.

DS2431 COMMAND LEVEL:

AVAILABLE COMMANDS: DATA FIELD AFFECTED:

READ ROM

MATCH ROM

SEARCH ROM

SKIP ROM

RESUME

OVERDRIVE-SKIP ROM

OVERDRIVE-MATCH ROM

64-BIT REG. #, RC-FLAG

RC-FLAG

RC-FLAG, OD-FLAG

64-BIT REG. #, RC-FLAG, OD-FLAG

1-Wire ROM FUNCTION COMMANDS

(SEE FIGURE 9)

WRITE SCRATCHPAD

READ SCRATCHPAD

COPY SCRATCHPAD

READ MEMORY

64-BIT SCRATCHPAD, FLAGS

64-BIT SCRATCHPAD

DATA MEMORY, REGISTER PAGE

DS2431-SPECIFIC

MEMORY FUNCTION COMMANDS

(SEE FIGURE 7)

Figure 2. Hierarchical Structure for 1-Wire Protocol

MSB

8-BIT

CRC CODE 48-BIT SERIAL NUMBER

MSB MSBLSB

LSB

8-BIT FAMILY CODE

(2Dh)

MSBLSB

Figure 3. 64-Bit Lasered ROM

iButton is a registered trademark of Maxim Integrated Products, Inc.

DS2431

1024-Bit, 1-Wire EEPROM

_______________________________________________________________________________________ 7

Memory Access

Data memory and registers are located in a linear

address space, as shown in Figure 5. The data memo-

ry and the registers have unrestricted read access.

The DS2431 EEPROM array consists of 18 rows of 8

bytes each. The first 16 rows are divided equally into

four memory pages (32 bytes each). These four pages

are the primary data memory. Each page can be indi-

vidually set to open (unprotected), write protected, or

EPROM mode by setting the associated protection

byte in the register row. As a factory default, the entire

data memory is unprotected and its contents are unde-

fined. The last two rows contain protection registers

and reserved bytes. The register row consists of 4 pro-

tection control bytes, a copy-protection byte, the facto-

ry byte, and 2 user byte/manufacture ID bytes. The

manufacturer ID can be a customer-supplied identifi-

cation code that assists the application software in

identifying the product the DS2431 is associated with.

1ST

STAGE

2ND

STAGE

3RD

STAGE

4TH

STAGE

7TH

STAGE

8TH

STAGE

6TH

STAGE

5TH

STAGE

X0X1X2X3X4

POLYNOMIAL = X8 + X5 + X4 + 1

INPUT DATA

X5X6X7X8

Figure 4. 1-Wire CRC Generator

ADDRESS RANGE TYPE DESCRIPTION PROTECTION CODES

0000h to 001Fh R/(W) Data Memory Page 0 —

0020h to 003Fh R/(W) Data Memory Page 1 —

0040h to 005Fh R/(W) Data Memory Page 2 —

0060h to 007Fh R/(W) Data Memory Page 3 —

0080h* R/(W) Protection Control Byte Page 0 55h: Write Protect P0; AAh: EPROM Mode P0;

55h or AAh: Write Protect 80h

0081h* R/(W) Protection Control Byte Page 1 55h: Write Protect P1; AAh: EPROM Mode P1;

55h or AAh: Write Protect 81h

0082h* R/(W) Protection Control Byte Page 2 55h: Write Protect P2; AAh: EPROM Mode P2;

55h or AAh: Write Protect 82h

0083h* R/(W) Protection Control Byte Page 3 55h: Write Protect P3; AAh: EPROM Mode P3;

55h or AAh: Write Protect 83h

0084h* R/(W) Copy Protection Byte 55h or AAh: Copy Protect 0080h:008Fh, and Any

Write-Protected Pages

0085h R Factory Byte. Set at Factory. AAh: Write Protect 85h, 86h, 87h;

55h: Write Protect 85h; Unprotect 86h, 87h

0086h R/(W) User Byte/Manufacturer ID —

0087h R/(W) User Byte/Manufacturer ID —

0088h to 008Fh — Reserved —

Figure 5. Memory Map

Once programmed to AAh or 55h this address becomes read only. All other codes can be stored, but neither write protect the

address nor activate any function.

DS2431

1024-Bit, 1-Wire EEPROM

8 _______________________________________________________________________________________

Contact the factory to set up and register a custom

manufacturer ID. The last row is reserved for future

use. It is undefined in terms of R/W functionality and

should not be used.

In addition to the main EEPROM array, an 8-byte

volatile scratchpad is included. Writes to the EEPROM

array are a two-step process. First, data is written to the

scratchpad and then copied into the main array. This

allows the user to first verify the data written to the

scratchpad prior to copying into the main array. The

device only supports full row (8-byte) copy operations.

For data in the scratchpad to be valid for a copy opera-

tion, the address supplied with a Write Scratchpad

command must start on a row boundary, and 8 full

bytes must be written into the scratchpad.

The protection control registers determine how incom-

ing data on a Write Scratchpad command is loaded

into the scratchpad. A protection setting of 55h (write

protect) causes the incoming data to be ignored and

the target address main memory data to be loaded into

the scratchpad. A protection setting of AAh (EPROM

mode) causes the logical AND of incoming data and

target address main memory data to be loaded into the

scratchpad. Any other protection control register set-

ting leaves the associated memory page open for unre-

stricted write access. Note: For the EPROM mode to

function, the entire affected memory page must first be

programmed to FFh. Protection-control byte settings of

55h or AAh also write protect the protection-control

byte. The protection-control byte setting of 55h does

not block the copy. This allows write-protected data to

be refreshed (i.e., reprogrammed with the current data)

in the device.

The copy-protection byte is used for a higher level of

security and should only be used after all other protec-

tion control bytes, user bytes, and write-protected

pages are set to their final value. If the copy-protection

byte is set to 55h or AAh, all copy attempts to the regis-

ter row and user-byte row are blocked. In addition, all

copy attempts to write-protected main memory pages

(i.e., refresh) are blocked.

Address Registers and Transfer Status

The DS2431 employs three address registers: TA1,

TA2, and E/S (Figure 6). These registers are common to

many other 1-Wire devices but operate slightly differ-

ently with the DS2431. Registers TA1 and TA2 must be

loaded with the target address to which the data is writ-

ten or from which data is read. Register E/S is a read-

only transfer-status register used to verify data integrity

with write commands. E/S bits E[2:0] are loaded with

the incoming T[2:0] on a Write Scratchpad command

and increment on each subsequent data byte. This is,

in effect, a byte-ending offset counter within the 8-byte

scratchpad. Bit 5 of the E/S register, called PF, is a

logic 1 if the data in the scratchpad is not valid due to a

loss of power or if the master sends fewer bytes than

needed to reach the end of the scratchpad. For a valid

write to the scratchpad, T[2:0] must be 0 and the mas-

ter must have sent 8 data bytes. Bits 3, 4, and 6 have

no function; they always read 0. The highest valued bit

of the E/S register, called authorization accepted (AA),

acts as a flag to indicate that the data stored in the

scratchpad has already been copied to the target

memory address. Writing data to the scratchpad clears

this flag.

BIT # 7 6 5 4 3 2 1 0

TARGET ADDRESS (TA1) T7 T6 T5 T4 T3 T2 T1 T0

TARGET ADDRESS (TA2) T15 T14 T13 T12 T11 T10 T9 T8

ENDING ADDRESS WITH

DATA STATUS (E/S)

(READ ONLY)

AA 0 PF 0 0 E2 E1 E0

Figure 6. Address Registers

DS2431

1024-Bit, 1-Wire EEPROM

_______________________________________________________________________________________ 9

Writing with Verification

To write data to the DS2431, the scratchpad must be

used as intermediate storage. First, the master issues

the Write Scratchpad command to specify the desired

target address, followed by the data to be written to the

scratchpad. Note that Copy Scratchpad commands

must be performed on 8-byte boundaries, i.e., the three

LSBs of the target address (T2, T1, T0) must be equal

to 000b. If T[2:0] are sent with nonzero values, the copy

function is blocked. Under certain conditions (see the

Write Scratchpad [0Fh]

section) the master receives an

inverted CRC-16 of the command, address (actual

address sent), and data at the end of the Write

Scratchpad command sequence. Knowing this CRC

value, the master can compare it to the value it has cal-

culated to decide if the communication was successful

and proceed to the Copy Scratchpad command. If the

master could not receive the CRC-16, it should send

the Read Scratchpad command to verify data integrity.

As a preamble to the scratchpad data, the DS2431

repeats the target address TA1 and TA2 and sends the

contents of the E/S register. If the PF flag is set, data

did not arrive correctly in the scratchpad, or there was

a loss of power since data was last written to the

scratchpad. The master does not need to continue

reading; it can start a new trial to write data to the

scratchpad. Similarly, a set AA flag together with a

cleared PF flag indicates that the device did not recog-

nize the Write command.

If everything went correctly, both flags are cleared.

Now the master can continue reading and verifying

every data byte. After the master has verified the data,

it can send the Copy Scratchpad command, for exam-

ple. This command must be followed exactly by the

data of the three address registers, TA1, TA2, and E/S.

The master should obtain the contents of these regis-

ters by reading the scratchpad.

Memory Function Commands

The

Memory Function Flowchart

(Figure 7) describes

the protocols necessary for accessing the memory of

the DS2431. An example on how to use these functions

to write to and read from the device is in the

Memory

Function Example

section. The communication

between the master and the DS2431 takes place either

at standard speed (default, OD = 0) or at overdrive

speed (OD = 1). If not explicitly set into overdrive

mode, the DS2431 assumes standard speed.

Write Scratchpad [0Fh]

The Write Scratchpad command applies to the data

memory and the writable addresses in the register

page. For the scratchpad data to be valid for copying

to the array, the user must perform a Write Scratchpad

command of 8 bytes starting at a valid row boundary.

The Write Scratchpad command accepts invalid

addresses and partial rows, but subsequent Copy

Scratchpad commands are blocked.

After issuing the Write Scratchpad command, the mas-

ter must first provide the 2-byte target address, fol-

lowed by the data to be written to the scratchpad. The

data is written to the scratchpad starting at the byte off-

set of T[2:0]. The E/S bits E[2:0] are loaded with the

starting byte offset and increment with each subse-

quent byte. Effectively, E[2:0] is the byte offset of the

last full byte written to the scratchpad. Only full data

bytes are accepted.

When executing the Write Scratchpad command, the

CRC generator inside the DS2431 (Figure 13) calcu-

lates a CRC of the entire data stream, starting at the

command code and ending at the last data byte as

sent by the master. This CRC is generated using the

CRC-16 polynomial by first clearing the CRC generator

and then shifting in the command code (0Fh) of the

Write Scratchpad command, the target addresses (TA1

and TA2), and all the data bytes. Note that the CRC-16

calculation is performed with the actual TA1 and TA2

and data sent by the master. The master can end the

Write Scratchpad command at any time. However, if

the end of the scratchpad is reached (E[2:0] = 111b),

the master can send 16 read time slots and receive the

CRC generated by the DS2431.

If a Write Scratchpad command is attempted to a write-

protected location, the scratchpad is loaded with the

data already existing in memory rather than the data

transmitted. Similarly, if the target address page is in

EPROM mode, the scratchpad is loaded with the bit-

wise logical AND of the transmitted data and data

already existing in memory.

DS2431

1024-Bit, 1-Wire EEPROM

10 ______________________________________________________________________________________

BUS MASTER Tx MEMORY

FUNCTION COMMAND

BUS MASTER Tx

TA1 (T[7:0]), TA2 (T[15:8])

BUS MASTER Rx

TA1 (T[7:0]), TA2 (T[15:8]),

AND E/S BYTE

BUS MASTER Rx

DATA BYTE FROM

SCRATCHPAD

MASTER Tx DATA BYTE

TO SCRATCHPAD APPLIES ONLY

IF THE MEMORY

AREA IS NOT

PROTECTED.

IF WRITE PROTECTED,

THE DS2431 COPIES

THE DATE BYTE FROM

THE TARGET ADDRESS

INTO THE SCRATCHPAD.

IF IN EPROM MODE,

THE DS2431 LOADS

THE BITWISE LOGICAL

AND OF THE TRANSMITTED

BYTE AND THE DATA

BYTE FROM THE TARGETED

ADDRESS INTO THE

SCRATCHPAD.

BUS MASTER

Rx "1"s

DS2431

INCREMENTS

E[2:0]

PF = 0

DS2431

SETS PF = 1

CLEARS AA = 0

SETS E[2:0] = T[2:0]

0Fh

WRITE SCRATCHPAD? N

MASTER Tx RESET?

E[2:0] = 7?

T[2:0] = 0?

MASTER Tx RESET?

DS2431 SETS

SCRATCHPAD

BYTE COUNTER = T[2:0]

AAh

READ SCRATCHPAD? N

DS2431 Tx CRC-16 OF

COMMAND, ADDRESS,

AND DATA BYTES AS THEY

WERE SENT BY THE BUS

MASTER

BUS MASTER

Rx "1"s

NMASTER Tx RESET?

BUS MASTER Rx CRC-16

OF COMMAND, ADDRESS,

E/S BYTE, AND DATA BYTES

AS SENT BY THE DS2431

MASTER Tx RESET?

BYTE COUNTER

= E[2:0]?

FROM ROM FUNCTIONS

FLOWCHART (FIGURE 9)

TO ROM FUNCTIONS

FLOWCHART (FIGURE 9)

DS2431

INCREMENTS

BYTE COUNTER

TO FIGURE 7b

FROM FIGURE 7b

Figure 7a. Memory Function Flowchart

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 11

BUS MASTER Tx

TA1 (T[7:0]), TA2 (T[15:8])

APPLICABLE TO ALL R/W

MEMORY LOCATIONS.

DURATION: tPROG *

* 1-Wire IDLE HIGH FOR POWER.

DS2431 COPIES

SCRATCHPAD

DATA TO ADDRESS

BUS MASTER

Rx "1"s

AA = 1

BUS MASTER

Rx "1"s

MASTER Tx RESET? NY

MASTER Tx RESET?

BUS MASTER Tx

TA1 (T[7:0]), TA2 (T[15:8])

AND E/S BYTE

55h

COPY SCRATCHPAD? N

DS2431 Tx "0"

DS2431 Tx "1"

F0h

READ MEMORY? N

AUTH. CODE

MATCH?

T[15:0] < 0090h?

PF = 0?

ADDRESS < 90h?

YCOPY PROTECTED?

BUS MASTER

Rx "1"s

MASTER Tx RESET?

DS2431 SETS MEMORY

ADDRESS = (T[15:0])

BUS MASTER Rx

DATA BYTE FROM

MEMORY ADDRESS

MASTER Tx RESET?

ADDRESS < 8Fh?

MASTER Tx RESET?

DS2431

INCREMENTS

ADDRESS

COUNTER

TO FIGURE 7a

FROM FIGURE 7a

Figure 7b. Memory Function Flowchart (continued)

DS2431

1024-Bit, 1-Wire EEPROM

12 ______________________________________________________________________________________

Read Scratchpad [AAh]

The Read Scratchpad command allows verifying the

target address and the integrity of the scratchpad data.

After issuing the command code, the master begins

reading. The first two bytes are the target address. The

next byte is the ending offset/data status byte (E/S) fol-

lowed by the scratchpad data, which may be different

from what the master originally sent. This is of particular

importance if the target address is within the register

page or a page in either write-protection mode or

EPROM mode. See the

Write Scratchpad [0Fh]

section

for details. The master should read through the scratch-

pad (E[2:0] - T[2:0] + 1 bytes), after which it receives

the inverted CRC based on data as it was sent by the

DS2431. If the master continues reading after the CRC,

all data is logic 1.

Copy Scratchpad [55h]

The Copy Scratchpad command is used to copy data

from the scratchpad to writable memory sections. After

issuing the Copy Scratchpad command, the master

must provide a 3-byte authorization pattern, which

should have been obtained by an immediately preced-

ing Read Scratchpad command. This 3-byte pattern

must exactly match the data contained in the three

address registers (TA1, TA2, E/S, in that order). If the

pattern matches, the target address is valid, the PF flag

is not set, and the target memory is not copy protected,

then the AA flag is set and the copy begins. All 8 bytes

of scratchpad contents are copied to the target memo-

ry location. The duration of the device’s internal data

transfer is tPROG during which the voltage on the 1-Wire

bus must not fall below 2.8V. A pattern of alternating 0s

and 1s are transmitted after the data has been copied

until the master issues a reset pulse. If the PF flag is set

or the target memory is copy protected, the copy does

not begin and the AA flag is not set.

Read Memory [F0h]

The Read Memory command is the general function to

read data from the DS2431. After issuing the com-

mand, the master must provide the 2-byte target

address. After these 2 bytes, the master reads data

beginning from the target address and can continue

until address 008Fh. If the master continues reading,

the result is logic 1s. The device’s internal TA1, TA2,

E/S, and scratchpad contents are not affected by a

Read Memory command.

1-Wire Bus System

The 1-Wire bus is a system that has a single bus mas-

ter and one or more slaves. In all instances the DS2431

is a slave device. The bus master is typically a micro-

controller. The discussion of this bus system is broken

down into three topics: hardware configuration, trans-

action sequence, and 1-Wire signaling (signal types

and timing). The 1-Wire protocol defines bus transac-

tions in terms of the bus state during specific time slots,

which are initiated on the falling edge of sync pulses

from the bus master.

Hardware Configuration

The 1-Wire bus has only a single line by definition; it is

important that each device on the bus be able to drive

it at the appropriate time. To facilitate this, each device

attached to the 1-Wire bus must have open-drain or

three-state outputs. The 1-Wire port of the DS2431 is

open drain with an internal circuit equivalent to that

shown in Figure 8.

A multidrop bus consists of a 1-Wire bus with multiple

slaves attached. The DS2431 supports both a standard

and overdrive communication speed of 15.4kbps (max)

and 125kbps (max), respectively. Note that legacy

1-Wire products support a standard communication

speed of 16.3kbps and overdrive of 142kbps. The

slightly reduced rates for the DS2431 are a result of

additional recovery times, which in turn were driven by

a 1-Wire physical interface enhancement to improve

noise immunity. The value of the pullup resistor primari-

ly depends on the network size and load conditions.

The DS2431 requires a pullup resistor of 2.2kΩ(max) at

any speed.

The idle state for the 1-Wire bus is high. If for any rea-

son a transaction needs to be suspended, the bus

must be left in the idle state if the transaction is to

resume. If this does not occur and the bus is left low for

more than 16µs (overdrive speed) or more than 120µs

(standard speed), one or more devices on the bus

could be reset.

Transaction Sequence

The protocol for accessing the DS2431 through the

1-Wire port is as follows:

• Initialization

• ROM Function Command

• Memory Function Command

• Transaction/Data

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 13

Initialization

All transactions on the 1-Wire bus begin with an initial-

ization sequence. The initialization sequence consists

of a reset pulse transmitted by the bus master followed

by presence pulse(s) transmitted by the slave(s). The

presence pulse lets the bus master know that the

DS2431 is on the bus and is ready to operate. For more

details, see the

1-Wire Signaling

section.

1-Wire ROM Function

Commands

Once the bus master has detected a presence, it can

issue one of the seven ROM function commands that

the DS2431 supports. All ROM function commands are

8 bits long. A list of these commands follows (see the

flowchart in Figure 9).

Read ROM [33h]

The Read ROM command allows the bus master to read

the DS2431’s 8-bit family code, unique 48-bit serial num-

ber, and 8-bit CRC. This command can only be used if

there is a single slave on the bus. If more than one slave

is present on the bus, a data collision occurs when all

slaves try to transmit at the same time (open drain pro-

duces a wired-AND result). The resultant family code and

48-bit serial number result in a mismatch of the CRC.

Match ROM [55h]

The Match ROM command, followed by a 64-bit ROM

sequence, allows the bus master to address a specific

DS2431 on a multidrop bus. Only the DS2431 that exact-

ly matches the 64-bit ROM sequence responds to the

subsequent memory function command. All other slaves

wait for a reset pulse. This command can be used with a

single device or multiple devices on the bus.

Search ROM [F0h]

When a system is initially brought up, the bus master

might not know the number of devices on the 1-Wire

bus or their registration numbers. By taking advantage

of the wired-AND property of the bus, the master can

use a process of elimination to identify the registration

numbers of all slave devices. For each bit of the regis-

tration number, starting with the least significant bit, the

bus master issues a triplet of time slots. On the first slot,

each slave device participating in the search outputs

the true value of its registration number bit. On the sec-

ond slot, each slave device participating in the search

outputs the complemented value of its registration num-

ber bit. On the third slot, the master writes the true

value of the bit to be selected. All slave devices that do

not match the bit written by the master stop participat-

ing in the search. If both of the read bits are zero, the

master knows that slave devices exist with both states

of the bit. By choosing which state to write, the bus

master branches in the ROM code tree. After one com-

plete pass, the bus master knows the registration num-

ber of a single device. Additional passes identify the

registration numbers of the remaining devices. Refer to

Application Note 187:

1-Wire Search Algorithm

for a

detailed discussion, including an example.

Skip ROM [CCh]

This command can save time in a single-drop bus sys-

tem by allowing the bus master to access the memory

functions without providing the 64-bit ROM code. If

more than one slave is present on the bus and, for

example, a read command is issued following the Skip

ROM command, data collision occurs on the bus as

multiple slaves transmit simultaneously (open-drain

pulldowns produce a wired-AND result).

RPUP

VPUP

BUS MASTER

OPEN-DRAIN

PORT PIN 100Ω MOSFET

DATA

DS2431 1-Wire PORT

Rx = RECEIVE

Tx = TRANSMIT

Figure 8. Hardware Configuration

DS2431

1024-Bit, 1-Wire EEPROM

14 ______________________________________________________________________________________

DS2431 Tx

PRESENCE PULSE

BUS MASTER Tx

RESET PULSE

BUS MASTER Tx ROM

FUNCTION COMMAND

DS2431 Tx

CRC BYTE

DS2431 Tx

FAMILY CODE

(1 BYTE)

DS2431 Tx

SERIAL NUMBER

(6 BYTES)

RC = 0

MASTER Tx BIT 0

RC = 0 RC = 0 RC = 0

OD = 0

33h

READ ROM

COMMAND?

N55h

MATCH ROM

COMMAND?

BIT 0 MATCH? BIT 0 MATCH?

N N

F0h

SEARCH ROM

COMMAND?

RESET PULSE?

CCh

SKIP ROM

COMMAND?

RC = 1

MASTER Tx BIT 1

MASTER Tx BIT 63

BIT 1 MATCH?

BIT 63 MATCH?

RC = 1

FROM MEMORY FUNCTIONS

FLOWCHART (FIGURE 7)

TO MEMORY FUNCTIONS

FLOWCHART (FIGURE 7)

DS2431 Tx BIT 0

MASTER Tx BIT 0

BIT 1 MATCH?

BIT 63 MATCH?

DS2431 Tx BIT 1

MASTER Tx BIT 1

DS2431 Tx BIT 63

MASTER Tx BIT 63

TO FIGURE 9b

FROM FIGURE 9b

Figure 9a. ROM Functions Flowchart

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 15

RC = 0; OD = 1 RC = 0; OD = 1

BIT 0 MATCH?

RC = 1?

A5h

RESUME

COMMAND?

3Ch

OVERDRIVE-

SKIP ROM?

69h

OVERDRIVE-

MATCH ROM?

FROM FIGURE 9a

TO FIGURE 9a

MASTER Tx

RESET?

MASTER Tx

RESET?

NBIT 1 MATCH?

MASTER Tx BIT 0

MASTER Tx BIT 1

OD = 0

NOD = 0

RC = 1

BIT 63 MATCH?

MASTER Tx BIT 63

Figure 9b. ROM Functions Flowchart (continued)

DS2431

1024-Bit, 1-Wire EEPROM

16 ______________________________________________________________________________________

Resume [A5h]

To maximize the data throughput in a multidrop envi-

ronment, the Resume command is available. This com-

mand checks the status of the RC bit and, if it is set,

directly transfers control to the memory function com-

mands, similar to a Skip ROM command. The only way

to set the RC bit is through successfully executing the

Match ROM, Search ROM, or Overdrive-Match ROM

command. Once the RC bit is set, the device can

repeatedly be accessed through the Resume com-

mand. Accessing another device on the bus clears the

RC bit, preventing two or more devices from simultane-

ously responding to the Resume command.

Overdrive-Skip ROM [3Ch]

On a single-drop bus this command can save time by

allowing the bus master to access the memory func-

tions without providing the 64-bit ROM code. Unlike the

normal Skip ROM command, the Overdrive-Skip ROM

command sets the DS2431 into the overdrive mode

(OD = 1). All communication following this command

must occur at overdrive speed until a reset pulse of

minimum 480µs duration resets all devices on the bus

to standard speed (OD = 0).

When issued on a multidrop bus, this command sets all

overdrive-supporting devices into overdrive mode. To

subsequently address a specific overdrive-supporting

device, a reset pulse at overdrive speed must be

issued followed by a Match ROM or Search ROM com-

mand sequence. This speeds up the time for the

search process. If more than one slave supporting

overdrive is present on the bus and the Overdrive-Skip

ROM command is followed by a read command, data

collision occurs on the bus as multiple slaves transmit

simultaneously (open-drain pulldowns produce a wired-

AND result).

Overdrive-Match ROM [69h]

The Overdrive-Match ROM command followed by a 64-

bit ROM sequence transmitted at overdrive speed

allows the bus master to address a specific DS2431 on

a multidrop bus and to simultaneously set it in overdrive

mode. Only the DS2431 that exactly matches the 64-bit

ROM sequence responds to the subsequent memory

function command. Slaves already in overdrive mode

from a previous Overdrive-Skip ROM or successful

Overdrive-Match ROM command remain in overdrive

mode. All overdrive-capable slaves return to standard

speed at the next reset pulse of minimum 480µs dura-

tion. The Overdrive-Match ROM command can be used

with a single device or multiple devices on the bus.

1-Wire Signaling

The DS2431 requires strict protocols to ensure data

integrity. The protocol consists of four types of signal-

ing on one line: reset sequence with reset pulse and

presence pulse, write-zero, write-one, and read-data.

Except for the presence pulse, the bus master initiates

all falling edges. The DS2431 can communicate at two

different speeds: standard speed and overdrive speed.

If not explicitly set into the overdrive mode, the DS2431

communicates at standard speed. While in overdrive

mode, the fast timing applies to all waveforms.

To get from idle to active, the voltage on the 1-Wire line

needs to fall from VPUP below the threshold VTL. To get

from active to idle, the voltage needs to rise from

VILMAX past the threshold VTH. The time it takes for the

voltage to make this rise is seen in Figure 10 as ε, and

its duration depends on the pullup resistor (RPUP) used

and the capacitance of the 1-Wire network attached.

The voltage VILMAX is relevant for the DS2431 when

determining a logical level, not triggering any events.

Figure 10 shows the initialization sequence required to

begin any communication with the DS2431. A reset

pulse followed by a presence pulse indicates that the

DS2431 is ready to receive data, given the correct ROM

and memory function command. If the bus master uses

slew-rate control on the falling edge, it must pull down

the line for tRSTL + tFto compensate for the edge. A

tRSTL duration of 480µs or longer exits the overdrive

mode, returning the device to standard speed. If the

DS2431 is in overdrive mode and tRSTL is no longer

than 80µs, the device remains in overdrive mode. If the

device is in overdrive mode and tRSTL is

between

80µs

and 480µs, the device resets, but the communication

speed is undetermined.

After the bus master has released the line it goes into

receive mode. Now the 1-Wire bus is pulled to VPUP

through the pullup resistor or, in the case of a DS2482-

x00 or DS2480B driver, through the active circuitry.

When the threshold VTH is crossed, the DS2431 waits

for tPDH and then transmits a presence pulse by pulling

the line low for tPDL. To detect a presence pulse, the

master must test the logical state of the 1-Wire line at

tMSP.

The tRSTH window must be at least the sum of

tPDHMAX, tPDLMAX, and tRECMIN. Immediately after

tRSTH is expired, the DS2431 is ready for data commu-

nication. In a mixed population network, tRSTH should

be extended to minimum 480µs at standard speed and

48µs at overdrive speed to accommodate other 1-Wire

devices.

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 17

Read/Write Time Slots

Data communication with the DS2431 takes place in

time slots that carry a single bit each. Write time slots

transport data from bus master to slave. Read time

slots transfer data from slave to master. Figure 11 illus-

trates the definitions of the write and read time slots.

All communication begins with the master pulling the

data line low. As the voltage on the 1-Wire line falls

below the threshold VTL, the DS2431 starts its internal

timing generator that determines when the data line is

sampled during a write time slot and how long data is

valid during a read time slot.

Master-to-Slave

For a write-one time slot, the voltage on the data line

must have crossed the VTH threshold before the write-

one low time tW1LMAX is expired. For a write-zero time

slot, the voltage on the data line must stay below the

VTH threshold until the write-zero low time tW0LMIN is

expired. For the most reliable communication, the volt-

age on the data line should not exceed VILMAX during

the entire tW0L or tW1L window. After the VTH threshold

has been crossed, the DS2431 needs a recovery time

tREC before it is ready for the next time slot.

Slave-to-Master

A read-data time slot begins like a write-one time slot.

The voltage on the data line must remain below VTL

until the read low time tRL is expired. During the tRL

window, when responding with a 0, the DS2431 starts

pulling the data line low; its internal timing generator

determines when this pulldown ends and the voltage

starts rising again. When responding with a 1, the

DS2431 does not hold the data line low at all, and the

voltage starts rising as soon as tRL is over.

The sum of tRL + δ(rise time) on one side and the inter-

nal timing generator of the DS2431 on the other side

define the master sampling window (tMSRMIN to

tMSRMAX), in which the master must perform a read

from the data line. For the most reliable communication,

tRL should be as short as permissible, and the master

should read close to but no later than tMSRMAX. After

reading from the data line, the master must wait until

tSLOT is expired. This guarantees sufficient recovery

time tREC for the DS2431 to get ready for the next time

slot. Note that tREC specified herein applies only to a

single DS2431 attached to a 1-Wire line. For multide-

vice configurations, tREC must be extended to accom-

modate the additional 1-Wire device input capacitance.

Alternatively, an interface that performs active pullup

during the 1-Wire recovery time such as the DS2482-

x00 or DS2480B 1-Wire line drivers can be used.

RESISTOR MASTER DS2431

tRSTL tPDL

tRSTH

tPDH

MASTER Tx "RESET PULSE" MASTER Rx "PRESENCE PULSE"

VPUP

VIHMASTER

VTH

VTL

VILMAX

tREC

tMSP

Figure 10. Initialization Procedure: Reset and Presence Pulse

DS2431

1024-Bit, 1-Wire EEPROM

18 ______________________________________________________________________________________

RESISTOR MASTER

RESISTOR MASTER DS2431

VPUP

VIHMASTER

VTH

VTL

VILMAX

VPUP

VIHMASTER

VTH

VTL

VILMAX

VPUP

VIHMASTER

VTH

VTL

VILMAX

tSLOT

tW1L

tREC

tSLOT

tW0L

tREC

MASTER

SAMPLING

WINDOW

tRL

tMSR

WRITE-ONE TIME SLOT

WRITE-ZERO TIME SLOT

READ-DATA TIME SLOT

Figure 11. Read/Write Timing Diagrams

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 19

Improved Network Behavior

(Switchpoint Hysteresis)

In a 1-Wire environment, line termination is possible

only during transients controlled by the bus master

(1-Wire driver). 1-Wire networks, therefore, are suscep-

tible to noise of various origins. Depending on the

physical size and topology of the network, reflections

from end points and branch points can add up or can-

cel each other to some extent. Such reflections are visi-

ble as glitches or ringing on the 1-Wire communication

line. Noise coupled onto the 1-Wire line from external

sources can also result in signal glitching. A glitch dur-

ing the rising edge of a time slot can cause a slave

device to lose synchronization with the master and,

consequently, result in a Search ROM command com-

ing to a dead end or cause a device-specific function

command to abort. For better performance in network

applications, the DS2431 uses a new 1-Wire front-end,

which makes it less sensitive to noise.

The DS2431’s 1-Wire front-end differs from traditional

slave devices in three characteristics.

1) There is additional lowpass filtering in the circuit that

detects the falling edge at the beginning of a time

slot. This reduces the sensitivity to high-frequency

noise. This additional filtering does not apply at

overdrive speed.

2) There is a hysteresis at the low-to-high switching

threshold VTH. If a negative glitch crosses VTH but

does not go below VTH - VHY, it is not recognized

(Figure 12, Case A). The hysteresis is effective at

any 1-Wire speed.

3) There is a time window specified by the rising edge

hold-off time tREH during which glitches are ignored,

even if they extend below the VTH - VHY threshold

(Figure 12, Case B, tGL < tREH). Deep voltage drops

or glitches that appear late after crossing the VTH

threshold and extend beyond the tREH window can-

not be filtered out and are taken as the beginning of a

new time slot (Figure 12, Case C, tGL ≥tREH).

Devices that have the parameters VHY and tREH speci-

fied in their electrical characteristics use the improved

1-Wire front-end.

CRC Generation

The DS2431 uses two different types of CRCs. One

CRC is an 8-bit type and is stored in the most signifi-

cant byte of the 64-bit ROM. The bus master can com-

pute a CRC value from the first 56 bits of the 64-bit

ROM and compare it to the value stored within the

DS2431 to determine if the ROM data has been

received error-free. The equivalent polynomial function

of this CRC is X8+ X5+ X4+ 1. This 8-bit CRC is

received in the true (noninverted) form. It is computed

at the factory and lasered into the ROM.

The other CRC is a 16-bit type, generated according to

the standardized CRC-16 polynomial function X16 + X15

+ X2+ 1. This CRC is used for fast verification of a data

transfer when writing to or reading from the scratchpad.

In contrast to the 8-bit CRC, the 16-bit CRC is always

communicated in the inverted form. A CRC generator

inside the DS2431 chip (Figure 13) calculates a new 16-

bit CRC, as shown in the command flowchart (Figure 7).

The bus master compares the CRC value read from the

device to the one it calculates from the data and

decides whether to continue with an operation or to

reread the portion of the data with the CRC error.

With the Write Scratchpad command, the CRC is gen-

erated by first clearing the CRC generator and then

shifting in the command code, the target addresses

TA1 and TA2, and all the data bytes as they were sent

VPUP

VTH VHY

tREH

tGL

tREH

tGL

CASE A CASE CCASE B

Figure 12. Noise Suppression Scheme

DS2431

1024-Bit, 1-Wire EEPROM

20 ______________________________________________________________________________________

by the bus master. The DS2431 transmits this CRC only

if E[2:0] = 111b.

With the Read Scratchpad command, the CRC is gen-

erated by first clearing the CRC generator and then

shifting in the command code, the target addresses

TA1 and TA2, the E/S byte, and the scratchpad data as

they were sent by the DS2431. The DS2431 transmits

this CRC only if the reading continues through the end

of the scratchpad. For more information on generating

CRC values, refer to Application Note 27.

1ST

STAGE

2ND

STAGE

3RD

STAGE

4TH

STAGE

7TH

STAGE

8TH

STAGE

6TH

STAGE

5TH

STAGE

X0X1X2X3X4

POLYNOMIAL = X16 + X15 + X2 + 1

INPUT DATA

CRC OUTPUT

X5X6

11TH

STAGE

12TH

STAGE

15TH

STAGE

14TH

STAGE

13TH

STAGE

X11 X12

9TH

STAGE

10TH

STAGE

X9X10 X13 X14

16TH

STAGE

X16

X15

Figure 13. CRC-16 Hardware Description and Polynomial

Command-Specific 1-Wire Communication Protocol—Legend

SYMBOL DESCRIPTION

RST 1-Wire reset pulse generated by master.

PD 1-Wire presence pulse generated by slave.

Select Command and data to satisfy the ROM function protocol.

WS Command "Write Scratchpad."

RS Command "Read Scratchpad."

CPS Command "Copy Scratchpad."

RM Command "Read Memory."

TA Target address TA1, TA2.

TA-E/S Target address TA1, TA2 with E/S byte.

<8–T[2:0] bytes> Transfer of as many bytes as needed to reach the end of the scratchpad for a given target address.

<Data to EOM> Transfer of as many data bytes as are needed to reach the end of the memory.

CRC-16 Transfer of an inverted CRC-16.

FF Loop Indefinite loop where the master reads FF bytes.

AA Loop Indefinite loop where the master reads AA bytes.

Programming Data transfer to EEPROM; no activity on the 1-Wire bus permitted during this time.

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 21

Command-Specific 1-Wire Communication Protocol—Color Codes

1-Wire Communication Examples

Master to Slave Slave to Master Programming

Write Scratchpad (Cannot Fail)

RST PD Select WS TA <8–T[2:0] bytes> CRC-16 FF Loop

Read Scratchpad (Cannot Fail)

RST PD Select RS TA-E/S <8–T[2:0] bytes> CRC-16 FF Loop

Copy Scratchpad (Success)

RST PD Select CPS TA-E/S Programming AA Loop

Copy Scratchpad (Invalid Address or PF = 1 or Copy Protected)

RST PD Select CPS TA-E/S FF Loop

Read Memory (Success)

RST PD Select RM TA <Data to EOM> FF Loop

Read Memory (Invalid Address)

RST PD Select RM TA FF Loop

DS2431

1024-Bit, 1-Wire EEPROM

22 ______________________________________________________________________________________

Memory Function Example

Write to the first 8 bytes of memory page 1. Read the

entire memory.

With only a single DS2431 connected to the bus mas-

ter, the communication looks like this:

MASTER MODE DATA (LSB FIRST) COMMENTS

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx 0Fh Issue “Write Scratchpad” command

Tx 20h TA1, beginning offset = 20h

Tx 00h TA2, address = 0020h

Tx <8 Data Bytes> Write 8 bytes of data to scratchpad

Rx <2 Bytes CRC-16> Read CRC to check for data integrity

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx AAh Issue “Read Scratchpad” command

Rx 20h Read TA1, beginning offset = 20h

Rx 00h Read TA2, address = 0020h

Rx 07h Read E/S, ending offset = 111b, AA, PF = 0

Rx <8 Data Bytes> Read scratchpad data and verify

Rx <2 Bytes CRC-16> Read CRC to check for data integrity

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx 55h Issue “Copy Scratchpad” command

Tx 20h TA1

Tx 00h TA2

Tx 07h E/S

(AUTHORIZATION CODE)

— <1-Wire Idle High> Wait tPROGMAX for the copy function to complete

Rx AAh Read copy status, AAh = success

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx F0h Issue “Read Memory” command

Tx 00h TA1, beginning offset = 00h

Tx 00h TA2, address = 0000h

Rx <144 Data Bytes> Read the entire memory

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 23

N.C.

GND

TO-92

TOP VIEW

N.C.

GND

N.C.

TSOC

DS2431

SFN

(6mm

6mm

0.9mm)

BOTTOM VIEW

NOTE: THE SFN PACKAGE IS QUALIFIED FOR ELECTRO-MECHANICAL

CONTACT APPLICATIONS ONLY, NOT FOR SOLDERING. FOR MORE

INFORMATION, REFER TO APPLICATION NOTE 4132: ATTACHMENT

METHODS FOR THE ELECTRO-MECHANICAL SFN PACKAGE.

IO GND

SIDE VIEW

FRONT VIEW (T&R VERSION)

FRONT VIEWSIDE VIEW

DS2431

UCSPR

TOP VIEW

GND N.C. N.C.

A1 A2 A3

C1 C2 C3

IO N.C. N.C.

16N.C. N.C.

25IO N.C.

34GND N.C.

TDFN-EP

(3mm

3mm)

TOP VIEW

DS2431

2431

ymrrF

*EP

*EXPOSED PAD

Pin Configurations

DS2431

1024-Bit, 1-Wire EEPROM

24 ______________________________________________________________________________________

USER DIRECTION OF FEED

LEADS FACE UP IN ORIENTATION SHOWN ABOVE.

SFN Package Orientation on Tape and Reel

PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO.

3 TO-92 (Bulk) Q3+1 21-0248 —

3 TO-92 (T&R) Q3+4 21-0250 —

6 TSOC D6+1 21-0382 90-0321

2 SFN G266+1 21-0390 —

6 TDFN-EP T633+2 21-0137 90-0058

6 UCSPR BR622+1 21-0376 Refer to

Application Note 1891

Package Information

For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. Note that a “+”, “#”, or “-” in the

package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the

package regardless of RoHS status.

DS2431

1024-Bit, 1-Wire EEPROM

______________________________________________________________________________________ 25

Revision History

REVISION

NUMBER

REVISION

DATE DESCRIPTION PAGES

CHANGED

0 050704 Initial release ——

Replaced Pin Configuration 1

In the Electrical Characteristics table, changed VTL(MIN) from 0.5V to 0.46V and

VTL(MAX) from 4.1V to 4.4V; changed VHY(MIN) from 0.22V to 0.21V 2

1 081604

In the Copy Scratchpad [55h] section, corrected the copy time from 13ms to 12.5ms 14

Added the SFN package and updated the Ordering Information table 1, 24

In the Pin Configuration, added a note to the CSP package outline “*See package

reliability report for important guidelines on qualified usage conditions.” 1

In the Electrical Characteristics table, changed the tPROG (programming time) EC

table parameter from 12.5ms to 10ms for version A2 (see also pages 1, 13).

Removed tFPD and updated tPDH, tMSP, tW0L accordingly. Changed IPROG max to

0.8mA to match GBD

1, 2, 3, 13

2 090506

Updated Memory Function Example table 23

Added CSP package outline drawing number to Pin Configuration 1

Changed VTL(MIN) from 0.46V to 0.5V in the Electrical Characteristics table 2

3 122106

In the Absolute Maximum Ratings, changed storage temp to -55°C to +125°C; in the

Electrical Characteristics table, changed VTH, VTL based on VPUP and data retention

to 40 years min at 85°C; added note to retention spec: “EEPROM writes can become

nonfunctional after the data-retention time is exceeded. Long-term storage at

elevated temperatures is not recommended; the device can lose its write capability

after 10 years at +125°C or 40 years at +85°C.”

1, 2, 3

In the Ordering Information table, removed all leaded part numbers and added the

TDFN-EP package 1, 24

In the Electrical Characteristics table, changed the VIL(MAX) spec from 0.3V to 0.5V;

removed  from the tW1L(MAX) spec; added Note 17 to tW0L spec; updated EC table

Notes 17 and 18; corrected Note 20

2, 3

Added EP function to the Pin Description table 3

Added  to Figure 11 Write-Zero Time Slot 19

4 102207

In the Pin Configuration, added the package drawing information/weblink and a note

that the SFN package is qualified for electro-mechanical contact applications only,

not for soldering. Added the SFN Package Orientation on Tape-and-Reel section. In

the Ordering Information, added note to contact factory for availability of the UCSPR

package. Added note that TO-92 T&R leads are formed to approximately 100-mil

spacing

In the SFN Pin Configuration, added reference to Application Note 4132 24

5 032008

Added Package Information table 25

6 8/08 Created newer template-style data sheet All

7 6/09

Deleted “contact factory” note in Ordering Information; updated Pin Description and

Pin Configurations to reflect changes in pin assignment of UCSPR package 1, 5, 23

8 10/09 Corrected part number in Ordering Information table 1

9 12/10 Deleted the automotive version reference in the Features section 1

10 3/11 Added the automotive version reference to the Features section 1

DS2431

1024-Bit, 1-Wire EEPROM

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are

implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600

Revision History (continued)

REVISION

NUMBER

REVISION

DATE DESCRIPTION PAGES

CHANGED

11 1/12

Updated Note 1 in the Electrical Characteristics section; specified the data memory

default status and added a note that the memory must be programmed to FFh for the

EPROM mode to function to the Memory Access section

3, 7, 8