BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features * 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. * rDS(ON) = 0.100 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Formerly developmental type TA9770. * Majority Carrier Device Ordering Information PART NUMBER BUZ71 PACKAGE TO-220AB * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ71 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) (c)2001 Fairchild Semiconductor Corporation SOURCE DRAIN GATE BUZ71 Rev. B BUZ71 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg BUZ71 50 50 14 56 20 40 0.32 100 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 50 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 A TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 A Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 gfs VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S - 20 30 ns IGSS Forward Transconductance (Note 2) Turn-On Delay Time td(ON) - 55 85 ns td(OFF) - 70 90 ns tf - 80 110 ns - 480 650 pF - 280 450 pF - 160 280 Rise Time tr Turn-Off Delay Time VCC = 30V, ID 3A, VGS = 10V, RGS = 50, RL = 10 Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) pF Thermal Resistance Junction to Case RJC 3.1 oC/W Thermal Resistance Junction to Ambient RJA 75 oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time Reverse Recovery Charge trr QRR MIN TYP MAX UNITS TC = 25oC TEST CONDITIONS - - 14 A TC = 25oC TJ = 25oC, ISD = 28A, VGS = 0V, (Figure 12) TJ = 25oC, ISD = 14A, dISD/dt = 100A/s, VR = 30V - - 56 A - 1.6 1.8 V - 120 - ns - 0.15 - C NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 820H, IPEAK = 14A. (See Figures 14 and 15). (c)2001 Fairchild Semiconductor Corporation BUZ71 Rev. B BUZ71 Typical Performance Curves Unless Otherwise Specified 18 1.2 VGS 10V POWER DISSIPATION MULTIPLIER 16 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 0 150 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 ID, DRAIN CURRENT (A) 101 TJ = MAX RATED SINGLE PULSE TC = 25oC 100s 1ms OPERATION IN THIS AREA MAY BE LIMITED 100 BY r DS(ON) 10ms 100ms DC ID, DRAIN CURRENT (A) 30 5s 10s PD = 40W VGS = 20V 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 8.0V 20 VGS = 7.5V VGS = 7.0V VGS = 6.5V VGS = 6.0V 10 VGS = 5.5V VGS = 5.0V 10-1 100 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation 103 0 VGS = 4.5V VGS = 4.0V 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 FIGURE 5. OUTPUT CHARACTERISTICS BUZ71 Rev. B BUZ71 15 Unless Otherwise Specified (Continued) 0.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 25V TJ = 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 10 5 0 5 VGS, GATE TO SOURCE VOLTAGE (V) VGS(TH), GATE THRESHOLD VOLTAGE (V) ON RESISTANCE () rDS(ON), DRAIN TO SOURCE VGS = 10V, ID = 9A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.20 0.10 -40 0 40 80 120 160 4 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS COSS CRSS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE (c)2001 Fairchild Semiconductor Corporation 30 3 2 1 0 -50 6 VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS +CGS 0 10 20 ID, DRAIN CURRENT (A) 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 10-2 0 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-1 20V VDS = VGS ID = 1mA TJ , JUNCTION TEMPERATURE (oC) 101 10V 0.1 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.30 0 9V 0.2 10 FIGURE 6. TRANSFER CHARACTERISTICS VGS = 5V 5.5V 6V 6.5V 7V 7.5V 8V 0.3 0 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 25V TJ = 25oC 5 4 3 2 1 0 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT BUZ71 Rev. B BUZ71 Typical Performance Curves 15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 101 TJ = 150oC TJ = 25oC 100 10-1 0 ID = 18A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) VDS = 10V 10 VDS = 40V 5 0 3.0 0 20 10 30 Qg, GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS tP L VARY tP TO OBTAIN REQUIRED PEAK IAS VDS IAS VDD + RG VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation 10% 50% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS BUZ71 Rev. B BUZ71 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2F VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd Qgs 0.3F D Ig(REF) VDS DUT G 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation VGS Ig(REF) 0 FIGURE 19. GATE CHARGE WAVEFORMS BUZ71 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4