BS250
Vishay Semiconductors
for merly General Semiconductor
Document Number 88180 www.vishay.com
10-May-02 1
DMOS T ransistor (P-Channel)
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage –VDSS 60 V
Drain-Gate Voltage –VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) –ID250 mA
Power Dissipation at Tamb = 25°CP
tot 0.83(1) W
Thermal Resistance Junction to Ambient Air RθJA 150(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Features
• High input impedance
• High-speed switching
• No minority carr ier storage time
• CMOS logic compatible input
• No thermal r unaway
• No secondar y breakdown
• On special request, this transistor is also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18 grams
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
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Dimensions in inches
and (millimeters)
BS250
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88180
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage
–V(BR)DSS
–ID= 100µA, VGS = 0 60 70 —V
Gate-Source Threshold Voltage –VGS(th) VGS = VDS, –ID= 1mA 1.0 2.0 3.0 V
Gate-Body Leakage Current –IGSS –VGS = 15V, VDS = 0 ——20 nA
Drain Cutoff Current –IDSS –VDS = 25V, VGS = 0 ——0.5 µA
Drain-Source ON Resistance RDS(on) –VGS = 10V, –ID= 0.2A —3.5 5.0 Ω
F orward Transconductance gm–VDS = 10V, –ID= 0.2A —150 —mS
f = 1MHz
Input Capacitance Ciss –VDS = 10V, VGS = 0, —60 —pF
f = 1MHz
Turn-On Time ton –VGS = 10V, –VDS = 10V —5—ns
Turn-Off Time toff RD= 100Ω — 25 — ns
Inverse Diode
Parameters Symbol Test Condition Value Unit
Maximum Forward Current (continuous) IFTamb = 25°C 0.3 A
Forward Voltage Drop (typ.) VFVGS = 0, IF= 0.12A 0.85 V
Tj= 25°C
BS250
Vishay Semiconductors
for merly General Semiconductor
Document Number 88180 www.vishay.com
10-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BS250
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88180
410-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BS250
Vishay Semiconductors
for merly General Semiconductor
Document Number 88180 www.vishay.com
10-May-02 5
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
