AO3413
20V P-Channel MOSFET
-15
Features
VDS = -20V
ID= -3A (VGS = -4.5V)
RDS(ON) < 80mΩ(VGS =- 4.5V)
RDS(ON) < 100mΩ (VGS = -2.5V)
RDS(ON) < 130mΩ (VGS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
t ≤ 10s 70 90
Steady-State 100 125
Steady-State R
θJL
63 80
-15 A
P
D
Power Dissipation
A
T
A
=25°C
T
A
=25°C
T
A
=70°C I
D
Pulsed Drain Current
B
MaximumParameter Units
-20
±8
°C-55 to 150
Continuous Drain
Current
A
-3
-2.4
Maximum Junction-to-Lead
C
°C/W
Units
Maximum Junction-to-Ambient
A
R
θJA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
VGate-Source Voltage
Drain-Source Voltage
Parameter
°C/W
Maximum Junction-to-Ambient
A
0.9
°C/W
W
Junction and Storage Temperature Range
T
A
=70°C
Thermal Characteristics
1.4
Features
VDS = -20V
ID= -3A (VGS = -4.5V)
RDS(ON) < 80mΩ(VGS =- 4.5V)
RDS(ON) < 100mΩ (VGS = -2.5V)
RDS(ON) < 130mΩ (VGS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev 9: July 2010 www.aosmd.com Page 1 of 5
AO3413
Symbol Min Typ Max Units
BV
DSS
-20 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-0.4 -0.65 -1 V
I
D(ON)
-15 A
56 80
T
J
=125°C 80 115
70 100 mΩ
85 130 mΩ
g
FS
12 S
V
SD
-0.7 -1 V
I
S
-1.4 A
C
iss
560 745 pF
C
oss
80 pF
C
rss
70 pF
R
g
15 23 Ω
Q
g
8.5 11 nC
Q
gs
1.2 nC
Q
gd
2.1 nC
t
D(on)
7.2 ns
r
36
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
Gate Source Charge
mΩ
V
GS
=-2.5V, I
D
=-2.6A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3A
V
GS
=-1.8V, I
D
=-1A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250µA
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3A
Reverse Transfer Capacitance
Rev 9: July 2010 www.aosmd.com Page 2 of 5
r
36
ns
t
D(off)
53 ns
t
f
56 ns
t
rr
37 49 ns
Q
rr
27 nC
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
R
GEN
=6Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3A, dI/dt=100A/µs
I
F
=-3A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 9: July 2010 www.aosmd.com Page 2 of 5
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.5V
-2.0V
2.5V
-4.5V
3.0V
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
VDS=-5V
50
70
90
110
130
150
0
2
4
6
8
10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Normalized On-Resistance
VGS=-2.5V
ID=-2.6A
VGS=-4.5V
ID=-3A
VGS=-1.8V
ID=-1A
Rev 9: July 2010 www.aosmd.com Page 3 of 5
12
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.5V
-2.0V
2.5V
-4.5V
3.0V
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
VDS=-5V
50
70
90
110
130
150
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125
°
C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=-2.5V
ID=-2.6A
VGS=-4.5V
ID=-3A
VGS=-1.8V
ID=-1A
40
60
80
100
120
140
160
180
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=-3A
25°C
125°C
Rev 9: July 2010 www.aosmd.com Page 3 of 5
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
1
2
3
4
5
0246810
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.00001
0.001
0.1
10
1000
Power (W)
VDS=-10V
I
D
=-3A
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-ID(Amps)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
Rev 9: July 2010 www.aosmd.com Page 4 of 5
12
0
1
2
3
4
5
0246810
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
VDS=-10V
I
D
=-3A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
Rev 9: July 2010 www.aosmd.com Page 4 of 5
AO3413
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 9: July 2010 www.aosmd.com Page 5 of 5
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 9: July 2010 www.aosmd.com Page 5 of 5