RB751S-40 Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Maximum Ratings and Electrical Characteristics, Single Diode @T A=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA IFSM 200 mA Junction temperature Tj 125 Storage temperature Tstg -55~+125 Peak forward surge current Electrical Ratings @TA=25 Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 A VR=30V Capacitance between terminals CT pF VR=1V, f=1MHZ 2 Typical Characteristics RB751S-40