RB751S-40 Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC reverse voltage VR 30 V
Mean rectifying current IO 30 mA
Peak forward surge current IFSM 200 mA
Junc ti on temperature Tj 125 ℃
Storage temperature Tstg -55~+125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF 0.37 V IF=1mA
Reverse current IR 0.5 µA VR=30V
Capacitance between terminals CT 2 pF VR=1V, f=1 MHZ
Typical Characteristics RB751S-40
