Provisional Data Sheet No. PD - 9.1716 IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U (R) HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] , HEXFET -100Volt, 0.30 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE9130 -100V 0.30 -6.5A Features: n n n n n n Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS dv/dt TJ TSTG www.irf.com IRFE9130, JANTX-, JANTXV-,JANS-,2N6849 Continuous Drain Current -6.5 Continuous Drain Current -4.1 Pulsed Drain Current 25 Max. Power Dissipation 25 Linear Derating Factor 0.20 Gate-to-Source Voltage 20 Single Pulse Avalanche Energy 165 Peak Diode Recovery dv/dt -30 Operating Junction -55 to 150 Storage Temperature Range 300 ( for 5 seconds) Surface Temperature Weight 0.42 (typical) Units A W W/K V mJ V/ns o C g 1 1/5/98 IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 -- -- V V GS =0 V, ID = -1.0mA -- -0.10 -- V/C Reference to 25C, I D = -1.0mA -- -- -2.0 1.9 -- -- -- -- -- -- -- -- 0.30 0.345 -4.0 -- -25 -250 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.8 100 -100 35 6.8 23 60 140 140 140 -- BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Typ Max Units V S( ) BVDSS A nA nC ns Internal Source Inductance -- 4.3 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 790 340 71 -- -- -- VGS = -10V, ID = -4.1A VGS = -10V, ID = -6.5A VDS = VGS, ID = -250A VDS > 15V, IDS = -4.1A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20 V VGS = -20V VGS = -10V, ID = -6.5A VDS = Max Rating x 0.5 VDD = -50V, ID = -6.5A, RG = 7.5 Measured from drain pad to die. nH LS Test Conditions pF Modified MOSFET symbol showing the internal inductances. Measured from center of source pad to the end of source bonding wire. VGS = 0V, VDS = -25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- -6.5 -25 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- -4.3 250 3.0 V ns C ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = -6.5A, VGS = 0V Tj = 25C, IF = -6.5A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max RthJC Junction-to-Case -- -- 5.0 RthJPCB Junction-to-PC Board -- -- 19 Units Test Conditions K/W Details of notes 2 Soldered to a copper clad PC board through are on the last page www.irf.com IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device 100 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 10 -4.5V 10 -4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 V DS = -50V 20s PULSE WIDTH 6 7 8 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20s PULSE WIDTH TJ = 150 C 1 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 9 ID = -6.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device VGS = Ciss = Crss = Coss = C, Capacitance (pF) 1200 20 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd -VGS , Gate-to-Source Voltage (V) 1400 1000 Ciss 800 600 Coss 400 200 Crss ID = -6.5A V DS =-80V V DS =-50V V DS =-20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 10 20 30 40 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 100 TJ = 150 C 1 TJ = 25 C 0.1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 3.0 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device VDS 7.0 VGS 6.0 RD D.U.T. RG - -I D , Drain Current (A) + VDD 5.0 -10V Pulse Width 1 s Duty Factor 0.1 % 4.0 3.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 1.0 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device L VDS D .U .T RG -10V -2 0 V tp VD D A IA S D R IV E R 0 .0 1 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) 400 ID -2.9A -4.1A BOTTOM -6.5A TOP 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG -10V 12V .2F .3F -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device Notes: Repetitive Rating; Pulse width limited by @ VDD = -25 V, Starting TJ = 25C, maximum junction temperature. EAS = [0.5 * L * (IL2) ] Refer to current HEXFET reliability report. Peak IL = -6.5A, VGS =10 V, 25 RG 200 Pulse width 300 s; Duty Cycle 2% K/W = C/W ISD -6.5A, di/dt -390 A/s, VDD BVDSS, TJ 150C Suggested R G = 2.35 Case Outline and Dimensions -- Leadless Chip Carrier (LCC) Package IR Case Style Leadless Chip Carrier (LCC) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 1/98 8 www.irf.com