Power Transistors
1
Publication date: April 2003 SJD00283BED
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■Features
•High forward current transfer ratio hFE which has satisfactory linearity
•Low collector-emitter saturation voltage VCE(sat)
•Full-pack package which can be installed to the heat sink with one screw
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage 2SD1266 VCBO 60 V
(Emitter open) 2SD1266A 80
Collector-emitter voltage 2SD1266 VCEO 60 V
(Base open) 2SD1266A 80
Emitter-base voltage (Collector open) VEBO 6V
Collector current IC3A
Peak collector current ICP 5A
Collector power TC = 25°CP
C35 W
dissipation 2.0
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SD1266 VCEO IC = 30 mA, IB = 060V
(Base open) 2SD1266A 80
Base-emitter voltage VBE VCE = 4 V, IC = 3 A 1.8 V
Collector-emitter cutoff 2SD1266 ICES VCE = 60 V, VBE = 0 200 µA
current (E-B short) 2SD1266A VCE = 80 V, VBE = 0 200
Collector-emitter cutoff 2SD1266 ICEO VCE = 30 V, IB = 0 300 µA
current (Base open) 2SD1266A VCE = 60 V, IB = 0 300
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 01mA
Forward current transfer ratio hFE1 *VCE = 4 V, IC = 1 A 70 320
hFE2 VCE = 4 V, IC = 3 A 10
Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.375 A 1.2 V
Transition frequency fTVCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz
Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA 0.5 µs
Storage time tstg VCC = 50 V 2.5 µs
Fall time tf0.4 µs
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.3
5.08
±0.5
213
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ 3.1
±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P O
hFE1 70 to 150 120 to 250 160 to 320
2SD1266, 2SD1266A
2SJD00283BED
VCE(sat) IChFE ICfT IC
PC TaIC VCE IC VBE
Safe operation area Rth t
0 16040 12080
0
50
40
30
20
10
(1) T
C
= T
a
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) With a 50 × 50 × 2 mm
Al heat sink
(4) Without heat sink
(P
C
= 2 W)
(1)
(2)
(3)
(4)
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
012108264
0
5
4
3
2
1
TC = 25°C
IB = 100 mA
90 mA
80mA
70 mA
60 mA
40 mA
30 mA
20 mA
10 mA
50 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0 2.42.01.60.4 1.20.8
0
8
6
2
4
T
C
= 100°C
25°C
−25°C
V
CE
= 4 V
Base-emitter voltage VBE (V)
Collector current IC (A)
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/I
B
= 8
T
C
= 100˚C
25˚C
–25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
1
10
10
2
10
4
10
3
V
CE
= 4 V
T
C
= 100˚C 25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
0.01 0.1 1 10
1
10
10
2
10
4
10
3
V
CE
= 5 V
f = 10 MHz
T
C
= 25˚C
Transition frequency f
T
(MHz)
Collector current I
C
(A)
1 10 100 1000
0.01
0.1
1
10
100
Non repetitive pulse
TC = 25˚C
ICP
IC
10 ms
DC
t = 1ms
2SD1266
2SD1266A
Collector current IC (A)
Collector-emitter voltage VCE (V)
10
–4
1010
–3
10
–1
10
–2
110
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(°C/W)
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
