2N7638-GA
Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 1 of 8
Normally – OFF Silicon Carbide
Junction Transistor
• 210°C maximum operating temperature
• Electric ally Isol ated B ase Plat e
• Gate Oxide Free SiC Switch
• Exceptional S afe Operati ng Area
• Excellent Gain Linearit y
• Compatible with 5 V TTL Gate Drive
• Temperature Independent S witc hing Performance
• Low Output Capacitance
• Positive Temperature Coef fici ent of RDS,ON
• Suitable for Connecti ng an Anti-parallel Di ode
SMD0.5 / TO – 276 (Hermetic Package)
• Compatible with Si MOSFET/IGB T Gate Dri ve ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifi er Bandwidth
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-T emperature Switchi ng
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
•
Power Factor Correction (PFC)
Table of Contents
Sectio n I: A bsol u te Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics ....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Sectio n IV : F igures ...........................................................................................................................................3
Sectio n V: Driving the 2N7638-GA ..................................................................................................................5
Section VI: Package Dimensions: ...................................................................................................................8
Section VII: SPICE Model Parameters ............................................................................................................9
Section I: Absolute Maximum Ratings
Parameter Symbol Conditions Values Unit
DS
VGS = 0 V
D
TJ = 210°C, TC = 25°C
Turn-Off Safe Operating Area RBSOA TVJ = 210°C, IG = 1.25 A,
Clamped Induc t ive Lo ad
D,max
A
Short Circuit Safe Operati ng Area SCSOA
VJ
G
DS
>20 µs
Reverse Gate – Source Voltage
GS
Reverse Drain – Source Voltage
DS
Power Dissipation Ptot TJ = 210°C, TC = 25 °C 200 W
Operating and Storage Tem perature
j
stg
VDS = 600 V
RDS(ON) = 170 mΩ
ID (Tc = 25°C) = 20 A
hFE (Tc = 25°C) = 110