J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 -0.3 to -1.5 -40 0.5 0.2 J/SST202 -0.8 to -4 -40 1 0.9 J/SST204 -0.3 to -2 -25 0.5 0.2 FEATURES D D D D Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS APPLICATIONS D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultra High Input Impedance Pre-Amplifiers DESCRIPTION The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. For applications information see AN102 and AN106. TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 3 S G 1 G 2 3 Top View Top View J201 J202 J204 Document Number: 70233 S-40393--Rev. G, 15-Mar-04 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236 www.vishay.com 1 J/SST201 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST201 Parameter Typa Symbol Test Conditions Min V(BR)GSS IG = -1 mA , VDS = 0 V -40 VGS(off) VDS = 15 V, ID = 10 nA -0.3 Max J/SST202 Min Max J/SST204c Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current IDSS IGSS VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C 0.2 -2 -40 -1.5 -0.8 1 0.9 -100 -25 -4 -0.3 4.5 0.2 -100 -1 IG VDG = 10 V, ID = 0.1 mA -2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V f = 1 kHz Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en V -2 3 mA -100 pA nA pA V Dynamic VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 0.5 2 0.5 mS 4.5 pF 1.3 6 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. www.vishay.com 1 nV Hz NPA, NH Document Number: 70233 S-40393--Rev. G, 15-Mar-04 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 4 6 3 gfs IDSS 4 2 2 1 0 1500 -1 -2 -3 -4 IG @ ID = 500 mA ID = 100 mA 1 nA TA = 125_C IGSS @ 125_C 100 pA ID = 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 0 -5 0 15 VDG - Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 2 10 gos 1200 8 6 900 rDS 600 4 300 2 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gfs - Forward Transconductance (mS) VGS(off) = -1.5 V 0 0 0 -1 -2 -3 -4 TA = -55_C 1.2 25_C 0.8 125_C 0.4 0 -5 0.01 0.1 VGS(off) = -0.7 V 1 ID - Drain Current (mA) Output Characteristics 400 VDS = 10 V f = 1 kHz 1.6 VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 2 VGS(off) = -1.5 V VGS = 0 V 360 1.6 ID - Drain Current (mA) ID - Drain Current (mA) 30 VGS(off) - Gate-Source Cutoff Voltage (V) gos - Output Conductance (mS) rDS(on) - Drain-Source On-Resistance ( ) 10 nA IG - Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 8 Gate Leakage Current 5 gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 10 -0.1 V 240 -0.2 V 160 -0.3 V 80 1.2 -0.3 V 0.8 -0.6 V 0.4 -0.4 V -0.5 V VGS = 0 V 0 -0.9 V -1.2 V 0 0 4 8 12 VDS - Drain-Source Voltage (V) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 16 20 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) www.vishay.com 3 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 500 VGS(off) = -0.7 V VGS(off) = -1.5 V VDS = 10 V ID - Drain Current (mA) TA = -55_C 300 25_C 200 125_C 100 TA = -55_C 1.2 25_C 0.8 0.4 0 125_C 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 -0.4 VGS - Gate-Source Voltage (V) VDS = 10 V f = 1 kHz 1.2 TA = -55_C 25_C 0.9 0.6 125_C 0.3 -1.6 -2 VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 3.2 2.4 TA = -55_C 25_C 1.6 0.8 125_C 0 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 VGS - Gate-Source Voltage (V) 120 RL + Assume VDD = 15 V, VDS = 5 V 10 V ID 80 -0.8 -1.2 -1.6 -2 On-Resistance vs. Drain Current 2000 rDS(on) - Drain-Source On-Resistance ( ) 160 g fs R L AV + 1 ) R g L os -0.4 VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 200 AV - Voltage Gain -1.2 Transconductance vs. Gate-Source Voltage 4 gfs - Forward Transconductance (mS) gfs - Forward Transconductance (mS) VGS(off) = -0.7 V -0.8 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.5 VGS(off) = -0.7 V -1.5 V 40 0 1600 VGS(off) = -0.7 V 1200 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) www.vishay.com 4 VDS = 10 V 1.6 400 ID - Drain Current (mA) Transfer Characteristics 2 1 0.01 0.1 1 ID - Drain Current (mA) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz Ciss - Input Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 0 -4 VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 20 -16 -20 VDS = 10 V Hz 2.4 1.8 TA = -55_C 0.8 -12 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V f = 1 kHz en - Noise Voltage nV / gos - Output Conductance (S) VGS(off) = -1.5 V -8 VGS - Gate-Source Voltage (V) 25_C 0.4 16 ID @ 100 mA 12 8 VGS = 0 V 4 125_C 0 0 0.01 0.1 1 10 100 ID - Drain Current (mA) VGS(off) = -0.7 V VGS(off) = -1.5 V VGS = 0 V 0.8 ID - Drain Current (mA) ID - Drain Current (A) 100 k Output Characteristics 1.0 240 -0.1 180 -0.2 120 -0.3 -0.5 60 10 k f - Frequency (Hz) Output Characteristics 300 1k VGS = 0 V 0.6 -0.3 0.4 -0.6 0.2 -0.4 -0.9 -1.2 0 0 0 0.1 0.2 0.3 VDS - Drain-Source Voltage (V) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1