E - - ee oe we a PANASONIC INDL/ELEK {IC} 1cE D La32852 oOOoOL04e1L 0 Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings (Ta=25C) CS term Symbol | TIP29 | TIP29A | TIP29B| TIP20C | Unit Appitcations: , Collector Base Voltage Vou 40 60 0 400 v Power Amplifier and High Speed Switching : - . Complementary pairwith - Collector-Emitter Voltage Veco | 40 | 60 | 80 | 100 [ V_-| TiP30, TIP3OA, TIPSOB, TIP3OG Emitter-Base Voltage VEBO 5 - ft Vv Features: Collector Current le ___1 A_| gow at2sC temperature Peak Collector Current kom 3 A * tA rated collector current a Base Current le - 04 A Min. fr of SMHz at 10V, 200mA Power Dissipation (Te= 25C) Po 30 W sO Junction Temperature Tj 65~ +150 G Storage Temperature Tstg ~65~ +150 C : ott Electrical Characteristics (Ta=25C). / . 7 . - TIP29 TIP29A TIP29B TIP2SC tem Symbol Condition _ min, max. | min, max. | min. max. | min. max.} Unit Collector-Emitter Voltage VcEO c=30mA, ia =0 40. 60 &0 100 Vv VceE=30V, ls=0 03 03 Collector Cutoff Current - {ceo Vce=60V, _Is=0 r 0.3 0.3 mA Vce=40V, VeeE=0 0.2 VceE=60V, VeeE=0 0.2. Collector Cutoff Current , | kes VcE=80V, VeE=0 0.2 mA VceE=100V, Vaee=0 0.2 Emitter-Base Current . leBo Vep=5V, kc=0 1 1 1 1 mA VceE=4V, ic=0.2A 40 40 40 40 DC Current Gain hre Vce=4V, lc=1A 18 75715 75 |)15 75 | 15 75 Base-Emitter Vottage VBE VceE=4V, ic=1A 13 13 1.3 13 Vv Collector-Emitter Saturation Voltage | Vce(sa)} fc=1A, la=125mA 0.7 0.7 0.7 0.7 Vv VcE=10V, Ic=0.2A, f=1kHz 20 20 20 20 Small-Signal Current Gain hie Vce=10V, [c=0.2A, f=iMHz 3 3 3 3 Turn-on Time ton Ic=1A, la1=100mA, la2=100mA 0.2 (typ.) us Turn-off Time toft VBEG=4.3V, RL=300 1 (typ.) ps The device specifications are subject to change without prior notice.. Unit: Inch 2 0.189 { of. 05%max. | 4 O, 106max. 0.028masx. . 1: Base 3 2: Collector 3: Emitter THE COLLECTOR |S IN ELECTRICAL CONTACT WITH THE MOUNTING TABPANASONIC INDL/ELEK {IC} L2E D MM 6932452 0010422 2 Te 33 -o . ae Ey Typical Characteristics Pc vs. Ta characteristics fr vs. Ic. characteristics 7 : Vee vs. Ie characteristics t elas ah ak i Le ot EEE o cs Le Ln ; | a | pero gs VAL ~ i Lt i el VZ On an at o2 1a 2a < 4 Ic(A) | o 2 3 a s 6 ; Vee(V) a as 5 ry 00 15 at Tac) Thermal Resistance vs.t aj vanesenoatsine Veasan VS. Ic characteristics Cob vs. Vce characteristics wo (2} Wah a 100x(0022mn Al heatsink ase eee 7 i ee Sa tetas } : i ! } iefia=10 f i t VoeX) 3 4 Veeisan(V) - Area of Safe Operation (ASO) (Te=25C) Vee VS. Ic characteristics hrevs tc characteristics 400 4000 39 10 2" =z 3 3 en < os B 5 a / 41.0 8 as Os Collector-Emitter Voltage Voe(V)