Ordering number: EN 3204 | 3204 25D2117 SANYO NPN Epitaxial Planar Silicon Transistor General Driver Applications Features - Darlington connection - High DC current gain - Large current capacity, wide ASO Absolute Maximum Ratings at Ta= 25C unit Collector to Base Voltage Vocpo 80 Vv Collector to Emitter Voltage Voro 50 Vv Emitter to Base Voltage VEBO 10 v Collector Current Ic 1.6 A Collector Current(Pulse) = Igp 3. OA Collector Dissipation Po iW Junction Temperature Tj 150 =C Storage Temperature Tstg -55to+150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current Icpo Vcogp=40V Ig =0 100 nA Emitter Cutoff Current lzBo Vep=6V Ic=0 100 nA DC Current Gain hpe(1) Vce=2V,Ic=500mA 4000 hpp(2) Vce=2V,Ic=10mA 3000 Gain-Bandwidth Product fr Veeg=10V,Ic=50mA 120 MHz C-E Saturation Voltage VeEtsat) Ic =500mA,Ip=0.5mA 0.9 1.5 Vv B-E Saturation Voltage Vagwat) I=500mA,Ip=0.5mA 15 (2.0 Vv C-B Breakdown Voltage VierjcBao = I=10pA,Ip=0 80 Vv C-E Breakdown Voltage Vesriceo Ic=1mA,Rpg= 50 Vv E-B Breakdown Voltage ViBR)EBO Ip = 10pA Ic =0 10 V Electrical Connection : c > Package Dimensions 2064 | (unit: mm ) 25 165 id | g ala os | ot Al | Los | 3 C: Collector B: Base fall bt Web) E: Emitter LT UT 2.54 : 2.54 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters _ TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 0269MO,TS No.3204-1/328D2117 - Vee < ! 2 ao iq 5 by 3 2 2 o Ip=0 2 4 6 8 10 12 Collector to Emitter Voltage,Vog V h - | Vce=2V DC Current Gain,hrg 0.0) 1.0 0.1 Collector Current,I - A VBE(sat) - Ic 6 Te/Ip = 1000 Saturation Voltage, Vprat) V Base to Emitter 0] 01 1o Collector Current, A o oO a Collector Dissipation,P,. W 60 ~ 89, 100 120 1 160 Ambient Temperature,Ta C Ic Vor=2V o@ Collector CurrentJ A Io Saturation Voltage, Voresy V Collector to Emitter 01 Collector Current, A 001 0.4 0.8 12 6 7.0 2.4 Base to Emitter Voltage,Vpr - V VeE(saty Ie Ic/Ip= 1000 i G01 ol I, Collector Current; A ASO T,= 25C ulse 1.0 10 Collector to Emitter Voltage,Vcogz V No.3204-2/32502117 Mi No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such olaim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectua) property rights or other rights of third partes. No.3204-3/3