2N5058 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021) dia. * CECC SCREENING OPTIONS * JAN LEVEL SCREENING OPTIONS 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 APPLICATIONS: 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) * General Purpose Amplifier * High Voltage 45 TO-39 (TO-205AD) PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector - Emitter Voltage (IB = 0) Collector - Base Voltage (IE = 0) Emitter - Base Voltage (IC = 0) Collector Current Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range 300V 300V 7V 150mA 1.0W 6.67mW / C 5.0W 33.3mW / C -65 to +200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5530 Issue 1 2N5058 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. V(BR)CEO* Collector - Emitter Breakdown Voltage IC = 30mA IB = 0 300 V(BR)CBO Collector - Base Breakdown Voltage IC = 100A IE = 0 300 V(BR)EBO Emitter - Base Breakdown Voltage IE = 100A IC = 0 7.0 ICBO Collector Cut-off Current IEBO Typ. Max. Unit V VCB = 100V 0.05 IE = 0 TA = +125C 20 Emitter Cut-off Current VBE = 5V IC = 0 10 VCE(sat)* Collector - Emitter Saturation Voltage IC = 30mA IB = 3mA 1.0 VBE(sat)* Base - Emitter Saturation Voltage IC = 30mA IB = 3mA 0.85 VBE(on)* Base - Emitter On Voltage IC = 30mA VCE = 25V 0.82 IC = 5mA VCE = 25V 10 IC = 30mA VCE = 25V 35 TA = -55C 10 VCE = 25V 35 hFE* DC Current Gain IC = 100mA SMALL SIGNAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. 1 Typ. IC = 10mA f = 20MHz Output Capacitance VCB = 10V IE = 0 f = 1MHz 10 Input Capacitance VBE = 0.5V IC = 0 f = 1MHz 75 Transistion Frequency Cob Cib THERMAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter 30 Min. 160 Typ. nA V -- Max. Unit VCE = 25V ft RJC RJA 150 A MHz pF Max. Unit Thermal Resistance Junction To Case 30 Thermal Resistance Junction To Ambient 150 C / W * Pulse Test: tp 300ms, d 2%. 1) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5530 Issue 1