2N5058
NPN EPITAXIAL PLANAR
BIPOLAR TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
• General Purpose Amplifier
• High Voltage
VCEO Collector – Emitter Voltage (IB= 0)
VCBO Collector – Base Voltage (IE= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICCollector Current
PDTotal Device Dissipation @ TA= 25°C
Derate above 25°C
PDTotal Device Dissipation @ TC= 25°C
Derate above 25°C
TJ, TSTG Operating and Storage Junction Temperature Range
300V
300V
7V
150mA
1.0W
6.67mW / °C
5.0W
33.3mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 (TO-205AD) PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5530
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N5058
Parameter Test Conditions Min. Typ. Max. Unit
ftTransistion Frequency 1
Cob Output Capacitance
Cib Input Capacitance
30 160
10
75
VCE = 25V IC= 10mA f = 20MHz
VCB = 10V IE= 0 f = 1MHz
VBE = 0.5V IC= 0 f = 1MHz
MHz
pF
SMALL SIGNAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
300
300
7.0 0.05
20
10
1.0
0.85
0.82
10
35 150
10
35
IC= 30mA IB= 0
IC= 100µAI
E= 0
IE= 100µAI
C= 0
VCB = 100V
IE= 0 TA= +125°C
VBE = 5V IC= 0
IC= 30mA IB= 3mA
IC= 30mA IB= 3mA
IC= 30mA VCE = 25V
IC= 5mA VCE = 25V
IC= 30mA VCE = 25V
TA= -55°C
IC= 100mA VCE = 25V
V(BR)CEO*Collector – Emitter Breakdown Voltage
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
VCE(sat)*Collector – Emitter Saturation Voltage
VBE(sat)*Base – Emitter Saturation Voltage
VBE(on)*Base – Emitter On Voltage
hFE*DC Current Gain
V
µA
nA
V
—
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
* Pulse Test: tp≤300ms, d ≤2%.
1) ftis defined as the frequency at which |hfe| extrapolates to untity.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Min. Typ. Max. Unit
RθJC Thermal Resistance Junction To Case
RθJA Thermal Resistance Junction To Ambient
30
150 °C / W
THERMAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
Document Number 5530
Issue 1
