TC7MET139AFK
2007-10-19 1
TOSHIBA CMOS Didital Integrated Circuit Silicon Monolithic
TC7MET139AFK
Dual 2-to-4 Line Decoder
The TC7MET139AFK is an advanced high speed CMOS 2 to 4
line decoder/demultiplexer fabricated with silicon gate C2MOS
technology.
It achieves the high speed operation similar to equivalent
bipolar schottky TTL while maintaining the CMOS low power
dissipation.
The active low enable input can be used for gating or it can be
used as a data input for demultiplexing applications.
When the enable input is held High, all four outputs are fixed
at a high logic level independent of the other inputs.
The input voltage are compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3
V to 5 V system.
Input protection and output circuit ensure that 0 to 5.5 V can
be applied to the input and output (Note) pins without regard to the supply voltage. These structure prevents device
destruction due to mismatched supply and input/output voltages such as battery back up, hot board insertion, etc.
Note: VCC = 0 V
Features
• High speed: tpd = 5.0 ns (typ.) (VCC = 5 V)
• Low power dissipation: ICC = 4 μA (max) (Ta = 25°C)
• Compatible with TTL outputs: VIL = 0.8 V (max)
V
IH = 2.0 V (min)
• Power down protection is provided on all inputs and outputs.
• Balanced propagation delays: tpLH ≈ tpHL
• Low noise: VOLP = 0.8 V (max)
• Pin and function compatible with the 74 series (74AC/HC/F/ALS/LS etc.) 139 type.
Weight: 0.02 g (typ.)
TC7MET139AFK
2007-10-19 2
Pin Assignment (top view)
IEC Logic Symbol
Truth Table
Inputs Outputs
Enable Select
G B A
0Y 1Y 2Y 3Y Selected Output
H X X H H H H None
L L L L H H H 0Y
L L H H L H H 1Y
L H L H H L H 2Y
L H H H H H L 3Y
X: Don’t care
1
2
3
4
5
6
7
1A
1B
8GND
2A
14
13
12
11
10
9
15
16 VCC
G2
0Y2
2B
G1
0Y1
1Y1
2Y1
3Y1
1Y2
2Y2
3Y2
0
G3
(2)
(3)
(1)
(14)
(13)
(15)
Dmux
0
11
2
0
3
1A
1B
G1
2A
(4)
(5)
(6)
(7)
(12)
(11)
(10)
(9)
2B
G2
1Y1
2Y1
0Y2
3Y1
0Y1
1Y2
2Y2
3Y2
(2)
(3)
(1)
(14)
(13)
(15)
X/Y
1
2
EN
1
2
0
3
1A
1B
G1
2A
(4)
(5)
(6)
(7)
(12)
(11)
(10)
(9)
2B
G2
1Y1
2Y1
0Y2 3Y1
0Y1
1Y2 2Y2 3Y2
TC7MET139AFK
2007-10-19 3
System Diagram
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5~7.0 V
DC input voltage VIN −0.5~7.0 V
−0.5~7.0 (Note 2)
DC output voltage VOUT −0.5~VCC + 0.5 (Note 3)
V
Input diode current IIK −20 mA
Output diode current IOK ±20 (Note 4) mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 180 mW
Storage temperature Tstg −65~150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temp erature/current/voltage and the
significant change in temperature, etc.) ma y cause this product to decreas e in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliabilit y upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Der ating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: VCC = 0 V
Note 3: High or low state. IOUT absolu t e maximum rating must be observed.
Note 4: VOUT < GND, VOUT > VCC
Operating Ranges (Note 1)
Characteristics Symbol Rating Unit
Supply voltage VCC 4.5~5.5 V
Input voltage VIN 0~5.5 V
0~5.5 (Note 2)
Output voltage VOUT 0~VCC (Note 3) V
Operating temperature Topr −40~85 °C
Input rise and fall time dt/dv 0~20 ns/V
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 2: VCC = 0 V
Note 3: High or low state.
2/14
3/13
B
G
A
1/15
4/12
5/11
6/10
7/9
2
Y
3
Y
1
Y
0
Y
TC7MET139AFK
2007-10-19 4
Electrical Characteristics
DC Characteristics
Ta = 25°C Ta = −40~85°C
Characteristics Symbol
Test Condition VCC (V) Min Typ. Max Min Max Unit
High level VIH ⎯ 4.5~5.5 2.0 ⎯ ⎯ 2.0 ⎯
Input voltage Low level VIL ⎯ 4.5~5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V
IOH = −50 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯
High level VOH VIN = VIH
or VIL IOH = −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯
IOL = 50 μA 4.5 ⎯ 0 0.1 ⎯ 0.1
Output voltage
Low level VOL VIN = VIH
or VIL IOL = 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44
V
Input leakage current IIN VIN = 5.5 V or GND 0~5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA
ICC V
IN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA
Quiescent supply current ICCT Per input: VIN = 3.4 V
Other input: VCC or GND 5.5 ⎯ ⎯ 1.35 ⎯ 1.50 mA
Output leakage current IOPD V
OUT = 5.5 V 0 ⎯ ⎯ 0.5 ⎯ 5.0 μA
AC Characteristics (Input: tr = tf = 3 ns)
Ta = 25°C Ta = −40~85°C
Characteristics Symbol
Test Condition VCC (V) CL (pF) Min Typ. Max Min Max Unit
15 ⎯ 5.0 7.2 1.0 8.5 Propagation delay time
(A, B- Y) tpLH
tpHL ⎯ 5.0 ± 0.5 50 ⎯ 6.5 9.2 1.0 10.5 ns
15 ⎯ 5.0 7.2 1.0 8.5 Propagation delay time
(G-Y) tpLH
tpHL ⎯ 5.0 ± 0.5 50 ⎯ 6.5 9.2 1.0 10.5 ns
Input capacitance CIN ⎯ ⎯ 4 10 ⎯ 10 pF
Power dissipation capacitance CPD (Note) ⎯ 32 ⎯ ⎯ ⎯ pF
Note: CPD is defined as the value of the internal equivalent cap acitance which is calculated from the operati ng
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr) = CPD･VCC･fIN + ICC/2 (per decoder)
TC7MET139AFK
2007-10-19
5
Package Dimensions
Weight: 0.02 g (typ.)
TC7MET139AFK
2007-10-19
6
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