NBT-168 0 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications * Active Amplifier in VCO Circuit * Gain Stage * Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for cascaded amplifier designs. This device is also ideally suited for VCO/buffer amplifier applications. The NBT-168 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tapeand-reel requirements. It is available in either packaged or chip (NBT-168-D) form, where its gold metallization is ideal for hybrid circuit designs. 2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max HT Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.025 min 0.125 max 0.50 nom 0.50 nom Pin 1 Indicator RF OUT Ground Ground RF OUT 0.98 min 1.02 max 0.38 nom All Dimensions in Millimeters 0.37 min 0.63 max Notes: 1. Solder pads are coplanar to within 0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of 0.13 mm. 3. Mark to include two characters and dot to reference pin 1. Optimum Technology Matching(R) Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS GaN HEMT SiGe Bi-CMOS !InGaP/HBT Package Style: MPGA, Bowtie, 3x3, Ceramic Features * Reliable, Low-Cost HBT Design * 26.0dB Gain@1.0GHz * Positive Power Supply Operation * 4-Finger Device for High-Current Pin 1 Indicator Capability 1 2 3 RF OUT * Low Noise Figure, 1.7dB@2.0GHz Ground 8 9 4 Ground RF IN 7 6 5 Functional Block Diagram Rev A3 021004 Ordering Information NBT-168 Microwave InGaP/GaAs Discrete HBT DC to 12GHz NBT-168-T1 or -T3 Tape & Reel, 1000 or 3000 Pieces (respectively) NBT-168-D NBT-168 Chip Form (100 pieces minimum order) NBT-168-E Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-65 NBT-168 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation VCBO VCEO VEBO Collector Current Junction Temperature Operating Temperature Storage Temperature Rating Unit +10 250 8 6 1.5 42 200 -45 to +85 -65 to +150 dBm mW V mA C C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Collector Cutoff Current, ICBO Emitter Cutoff Current, IEBO DC Current Gain, hFE Current Gain, H21 Small Signal Power Gain, S21 Noise Figure, NF Reverse Isolation, S12 90 24 -30 110 20 26 1.7 -32 0.1 0.1 130 A A dB dB dB dB Condition VC =+3.9V, ICC =25mA, Z0 =50, TA =+25C VCB =5.0V, IE =0 VEB =1.0V, IC =0 VCE=4.0V, IC =25mA VCE=4.0V, IC =25mA, 2GHz f=1.0GHz f=2.0GHz f=1.0GHz MTTF versus Temperature @ VCE =3.9V, ICC =25mA Case Temperature Junction Temperature MTTF 85 112 >1,000,000 C C hours 277 C/W Thermal Resistance JC 4-66 Thermal Resistance, at any temperature (in C/Watt) can be estimated by the following equation: JC (C/Watt)=277[TJ(C)/112] Rev A3 021004 NBT-168 Pin 1 Function EMITTER 2 3 4 EMITTER EMITTER BASE 5 6 7 8 EMITTER EMITTER EMITTER COLLECTOR Description Interface Schematic For best high frequency performance, this should be grounded. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 2. Same as pin 2. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. Base bias network should provide 1.3V to the base and be a current source sufficient to supply the correct base current for the collector current set. Same as pin 2. Same as pin 2. Same as pin 2. Collector bias. Must provide collector voltage and current. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin at the desired level. The resistor value is determined by the following equation: ( V CC - V C ) R = ---------------------------I CC 9 EMITTER Rev A3 021004 Care should be taken to ensure the current through the devices never exceeds the maximum datasheet setting. Additionally, care should be taken to ensure the voltages between the collector and emitter (pins 3, 2 and 4), VCE is typically 3.5V to 4.0V. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2. COLLECTOR BASE EMITTER 4-67 NBT-168 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VBB VCC RCC RB1 L choke (optional) L choke (optional) In Out NBT-168 C block VBE RB2 C block VCE Note: RF bypass circuitry omitted for simplicity. Sales Criteria - Unpackaged Die Die Sales Information * All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be negotiated on a case-by-case basis. * Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product Final Visual Inspection Criteria1. * Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allowable. Die Packaging * All die are packaged in GelPak ESD protective containers with the following specification: O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X8). * GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2. Package Storage * Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2. Die Handling * Proper ESD precautions must be taken when handling die material. * Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of tweezers. Do not touch die with any part of the body. * When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force may damage GaAs devices. 4-68 Rev A3 021004 NBT-168 Die Attach * The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the thermal path by which heat can leave the chip. * Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. * All connections should be made on the topside of the die. It is essential to performance that the backside be well grounded and that the length of topside interconnects be minimized. * Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out on the topside. Die Wire Bonding * Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. * All bond wires should be made as short as possible. Notes 1 RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die inspection personnel to determine final visual acceptance of die product prior to shipping to customers. 2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discretion of RFMD. Rev A3 021004 4-69 NBT-168 Tape and Reel Dimensions All Dimensions in Millimeters T A O B S D F 330 mm (13") REEL ITEMS Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D SIZE (inches) 13.0 +0.079/-0.158 18.4 MAX 12.4 +2.0 0.724 MAX 0.488 +0.08 102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN PIN 1 User Direction of Feed 4.0 All dimensions in mm See Note 1 2.00 0.05 1.5 See Note 6 0.30 0.05 +0.1 -0.0 A 1.5 MIN. 1.75 R0.3 MAX. 5.50 0.05 See Note 6 12.00 0.30 Bo Ko Ao 8.0 A R0.5 TYP SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. 4-70 Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM Rev A3 021004 NBT-168 Collector Current versus Base to Emitter Voltage Current Voltage Characteristics (NBT-168) (NBT-168) 35.0 0.045 0.040 30.0 0.035 0.030 20.0 0.025 IC (A) Collector Current, IC (mA) 25.0 15.0 0.020 0.015 10.0 0.010 5.0 0.005 0.0 Pout (dBm) Series3 Series4 0.000 -5.0 Gain (dB) Series7 Series5 -0.005 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.000 1.000 2.000 Base to Emitter Voltage (VBE) 3.000 4.000 5.000 6.000 VCE (V) Frequency versus Noise Figure Insertion Power Gain versus Frequency (NBT-168) (NBT-168) 35.0 5.0 4.5 30.0 Insertion Power Gain (dB) Noise Figure (dB) 4.0 3.5 3.0 2.5 25.0 20.0 15.0 10.0 2.0 5.0 1.5 1.0 0.0 1.0 1.5 2.0 Frequency (GHz) Rev A3 021004 2.5 3.0 0.1 1.0 10.0 100.0 Frequency (GHz) 4-71 NBT-168 4-72 Rev A3 021004