NBT-168-T1 - RF Micro Devices

4-65

Product Description

Ordering In formation

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT

Si Bi-CMOS SiGe HBT Si CMOS

InGaP/HBT GaN HEMT SiGe Bi-CMOS

6 5

Pin 1

Indicator

RF OUT Ground

RF IN

Ground

NBT-168

MICROWAVE InGaP/GaAs DISCRETE HBT

DC TO 12GHz

• Active Amplifier in VCO Circuit

• Buffer Amplifier • Gain Stage

The NBT-168 discrete HBT is ideal for low-cost amplifier

and oscillator applications up to 12GHz. Low noise figure ,

high gain, high current capabili ty, and medium output give

this device high dynamic range and excellent linearity for

cascaded amplifier designs. This device is also ideally

suited for VCO/buffer amplifier applications. The NBT-168

is packaged in a low-cost, surface-mount ceramic pack-

age, providing ease of assembly for high-volume tape-

and-reel requirements. It is available in either packaged

or chip (NBT-168-D) form, where its gold metallization is

ideal for hybrid circuit designs.

• Reliable, Low-Cost HBT Design

• 26.0dB Gain@1.0GHz

• Positive Power Supply Operation

• 4-Finger Device for High-Current

Capability

• Low Noise Figure, 1.7dB@2.0GHz

NBT-168 Microwave InGaP/GaAs Discrete HBT DC to 12GHz

NBT-168-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NBT-168-D NBT-168 Chip Form (100 pieces minimum order)

NBT-168-E Fully Assembled Evaluation Board

Rev A3 021004

Notes:

1. Solder pads are coplanar to within ±0.025 mm.

2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.

3. Mark to include two characters and dot to reference pin 1.

2.39 min

2.59 max

Lid ID

1.70 min

1.91 max

2.94 min

3.28 max

Pin 1

Indicator

1.00 min

1.50 max

0.025 min

0.125 max

0.38 nom

Pin 1

Indicator

RF OUT

0.98 min

1.02 max

RF OUT

Ground

0.50 nom

All Dimensions in Millimeters 0.37 min

0.63 max

Ground

Package Style: MPGA, Bowtie, 3x3, Ceramic

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NBT-168

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Absolute Maximum Ratings

Parameter Rating Unit

RF Input Power +10 dBm

Power Dissipation 250 mW

VCBO 8

VCEO 6

VEBO 1.5 V

Collector Current 42 mA

Junction Temperature 200 °C

Operating Temperature -45 to +85 °C

Storage Temperature -65 to +150 °C

Exceeding any one or a combination of these limits may cause permanent damage.

Parameter Specification Unit Condition

Min. Typ. Max.

Overall VC=+3.9V, ICC=25mA, Z0=50Ω, TA=+25°C

Collector Cutoff Current, ICBO 0.1 µAV

CB=5.0V, IE=0

Emitter Cutoff Current, IEBO 0.1 µAV

EB=1.0V, IC=0

DC Current Gain, hFE 90 110 130 VCE=4.0V, IC=25mA

Current Gain, H21 20 dB VCE=4.0V, IC=25mA, 2GHz

Small Signal Power Gain, S21 24 26 dB f=1.0GHz

Noise Figure, NF 1.7 dB f=2.0GHz

Reverse Isolation, S12 -30 -32 dB f=1.0GHz

MTTF versus Temperature

@ VCE=3.9V, ICC=25mA

Case Temperature 85 °C

Junction Temperature 112 °C

MTTF >1,000,000 hours

Thermal Resistance

θJC 277 °C/W Thermal Resistance, at any temperature (in

°C/W att) can be estimated by the following

equation: θJC (°C/Watt)=277[TJ(°C)/112]

Caution! ESD sensitive device .

RF Micro Device s believ es the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

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NBT-168

Rev A3 021004

Pin Function Description Interface Schematic

1 EMITTER For best high frequency performance, this should be grounded. For

best performance, keep traces physically short and connect immedi-

ately to ground plane.

2 EMITTER Same as pin 2.

3 EMITTER Same as pin 2.

4BASE

RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in

most applications. Base bias network should provide 1.3V to the base

and be a current source sufficient to supply the correct base current

for the collector current set.

5 EMITTER Same as pin 2.

6 EMITTER Same as pin 2.

7 EMITTER Same as pin 2.

8 COLLECTOR Collector bias. Must provide collector voltage and current. Biasing is

accomplished with an external series resistor and choke inductor to

VCC. The resistor is selected to set the DC current into this pin at the

desired level. The resistor value is determined by th e following equa-

tion:

Care should be taken to ensure the current through the devices nev er

exceeds the maximum datasheet setting. Additionally, care should be

taken to ensure the voltages between the collector and emitter (pins

3, 2 and 4), VCE is typically 3.5V to 4.0V. Because DC is present on

this pin, a DC blocking capacitor, suitable for the frequency of opera-

tion, should be used in most applications. The supply side of the bias

network should also be well bypassed.

9 EMITTER Same as pin 2.

RVCC VC

–()

ICC

----------------------------

=BASE COLLECTOR

EMITTER

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NBT-168

Rev A3 021004

T ypical Bias Configuration

Application notes related to biasing circuit, device footprint, and thermal considerations ar e available on request.

Sales Criteria - Unpackaged Die

Die Sales Information

• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die mate rial shall be nego-

tiated on a c ase-by-case basis.

• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product

Final Visual Inspection Criteria1.

• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-

able.

Die Packa ging

• All die are packaged in GelPak ESD protective containers with the following specification:

O. D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=H i gh(X8).

• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is

opened the GelPak/s should be stored in a co ntrolled nitrogen environment. Do not press on the cover of a closed

GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.

• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit 2.

Package Storage

• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.

• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit2.

Die Handling

• Proper ESD precautions must be taken when handling die ma terial.

• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-

zers. Do not touch die with any par t of the body.

• When using a utomated pic k-up and placeme nt equipment, ens ure that force impact is set correctly. Excessiv e force

may damage GaAs devices.

C block

In Out

L choke

(optional)

RB1

VBB

Note: RF bypass circuitry omitted for simplicity.

RB2

NBT-168

L choke

(optional)

RCC

VCC

VBE VCE

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NBT-168

Rev A3 021004

Die Attach

• The die attach pr ocess mechanically atta ches the die to the circuit sub strate . In addition, the utili zation of proper die

attach processes electrically connect the ground to the trace on whic h the chip is mounted. It also establishes the

thermal path by which heat can leave the chip.

• Die should be mounted to a clean, flat surface. Epoxy or eu tectic die attach are both acceptable attachment meth-

ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure

involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-

strate.

• All connections should be made on the topside of the die. It is essential to performance that the backside be well

grounded and that the length of topside interconnects be minimized.

• Some die utilize vias for effective g rounding. Care must be e x ercised when mounting die to preclude ex cess run-out

on the topside.

Die Wire Bonding

• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-

able practices for wire bonding.

• All bond wires sh ou ld be made as sho rt as possible.

Notes

1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die

inspection personn el to determine final visual accept ance of die product prior to shipping to cu stomers.

2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to min-

imize material shift. However, due to the physical size of die-level product, RFMD does n ot guarantee that material w ill

not shift dur ing transit, espec ially under extreme handling circums tances. Product replacement due to material sh ift will

be at the discretion of RFMD.

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NBT-168

Rev A3 021004

Tape and Reel Dimensions

All Dimensions in Millimeters

330 mm (13") REEL Micro-X, MPGA

SYMBOL SIZE (mm)ITEMS SIZE (inches)

FLANGE B

330 +0.25/-4.0

18.4 MAX

12.4 +2.0

Diameter

Thickness

Space Between Flange

13.0 +0.079/-0.158

0.724 MAX

0.488 +0.08

HUB

102.0 REF

13.0 +0.5/-0.2

1.5 MIN

Outer Diameter

Spindle Hole Diameter

Key Slit Width D20.2 MINKey Slit Diameter

4.0 REF

0.512 +0.020 /-0.008

0.059 MIN

0.795 MIN

PIN 1

User Direction of Feed

Ao = 3.6 MM

Bo = 3.6 MM

Ko = 1.7 MM

NOTES:

1. 10 sprocket hole pitch cumulative tolerance ±0.2.

2. Camber not to exceed 1 mm in 100 mm.

3. Material: PS+C

4. Ao an d Bo measure d on a plane 0.3 mm abov e the bottom of the pocket.

5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.

6. Poc ket pos i tion relat i ve to sp rocket ho l e measured as true position of pocket, not pocket hole.

All di m ensions in mm

SECTI ON A-A

R0.3 MAX.

0.30 ± 0.05

5.50 ± 0.05

See Note 6 12.00

± 0.30

1.75

AR0.5 TY P

1.5 MIN.

Ao 8.0

2.00 ± 0.05

See Note 6

4.0

See Note 1 +0.1

-0.0

1.5

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NBT-168

Rev A3 021004

Collector Current versus Base to Emitter Voltage

(NBT-168)

-5.0

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Base t o Em itt er Volt age (VBE)

Collector Current, IC (mA)

Current Voltage Characteristics

(NBT-168)

-0.005

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.000 1.000 2.000 3.000 4.000 5.000 6.000

VCE (V)

IC (A)

Pout ( d Bm ) Gain (dB)

Series3 Series7

Series4 Series5

Frequency versus Noise Figure

(NBT-168)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1.01.52.02.53.0

Fr equency (GHz)

Noise Figure (dB)

Insertion Power Gain versus Frequency

(NBT-168)

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

0.1 1.0 10.0 100.0

Fre quency (GHz)

Insertion Power Gain (dB)

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NBT-168

Rev A3 021004