BD238 Low voltage PNP power transistor Features Low saturation voltage PNP transistor ) s ( ct Applications 1 u d o Audio, power linear and switching applications 3 2 r P e SOT-32 (TO-126) Description The device is manufactured in planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The NPN type is BD237. ) (s t e l o Figure 1. Internal schematic diagram s b O t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging BD238 BD238 SOT-32 Tube June 2009 Doc ID 15786 Rev 1 1/9 www.st.com 9 Absolute maximum ratings 1 BD238 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) -100 V VCER Collector-emitter voltage (RBE = 1 k) -100 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current -2 ICM Collector peak current (tp < ms) -6 PTOT Total dissipation at Tcase = 25 C 25 Tstg Storage temperature IC TJ ro P e Max. operating junction temperature ) (s s b O t c u d o r P e t e l o s b O Doc ID 15786 Rev 1 ) s ( ct du -65 to 150 t e l o 2/9 Value 150 A A W C C BD238 2 Electrical characteristics Electrical characteristics (Tcase = 25 C; unless otherwise specified) Table 3. Electrical characteristics Symbol ICBO Parameter IEBO Test conditions Collector cut-off current VCB = -100 V (IE = 0) VCB = -100 V Tc= 150 C Emitter cut-off current (IC = 0) VEB = -5 V Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) Collector-emitter saturation voltage IC = -1 A __ VBE(on)(1) Base-emitter on voltage IC = -1 A ___ hFE(1) DC current gain ) (s - -80 IB = -0.1 A so e t e l VCE = -2 V Pr 40 IC = -1 A_ 25 b O VCE = -2 V - Max. Unit -0.1 mA -2 mA -1 mA ) s ( ct u d o IC = -150 mA _ VCE = -2 V 1. Pulsed duration = 300 s, duty cycle = 1.5 %. Typ. - IC = -100 mA VCE(sat)(1) Min. V - -0.6 V - -1.3 V - t c u d o r P e t e l o s b O Doc ID 15786 Rev 1 3/9 Electrical characteristics 2.1 BD238 Electrical characteristic (curves) Figure 2. Safe operating area Figure 3. Derating curves ) s ( ct Figure 4. DC current gain (VCE = -2 V) u d o r P e Figure 5. DC current gain (VCE = -4 V) t e l o ) (s s b O t c u P e d o r Figure 6. t e l o Collector-emitter saturation voltage Figure 7. s b O 4/9 Doc ID 15786 Rev 1 Base-emitter saturation voltage BD238 Electrical characteristics Figure 8. Base-emitter on voltage Figure 9. Resistive load switching time (on) ) s ( ct Figure 10. Resistive load switching time (off) u d o r P e t e l o ) (s s b O t c u d o r 2.2 Test circuit P e Figure 11. Resistive load switching test circuit t e l o s b O 1) Fast electronic switch 2) Non-inductive resistor Doc ID 15786 Rev 1 5/9 Package mechanical data 3 BD238 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 6/9 Doc ID 15786 Rev 1 BD238 Package mechanical data SOT-32 (TO-126) mechanical data mm. DIM. MIN. A TYP MAX. 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 e1 4.07 4.58 L 15.3 P 2.9 Q u d o 5.08 3.8 Q1 e t e l 1 H2 2.15 ) s ( ct 2.54 Pr 16 3.2 1.52 o s b I 1.27 O ) s ( t c u d o r P e t e l o s b O 0016114E Doc ID 15786 Rev 1 7/9 Revision History 4 BD238 Revision History Table 4. Document revision history Date Revision 03-Jun-2009 1 Changes Initial release ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/9 Doc ID 15786 Rev 1 BD238 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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