Feb. 2009
CM200DU-24NFH
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
8.85 (8.25)
(18)
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
4
0.5
0.5
25.7
0.5
0.5
E1 E2 G2
G1
CM
C1
E2
C2E1
LABEL
4-φ6. 5 MOUNTING HOLES
3-M6 NUTS
108
29 +1.0
–0.5
62
18 7 18 7 18
8.5
22
93 ±0.25
48 ±0.25
2.8
4
7.5
6156
(7)
17.5
14 14 14
25 2.521.525
TC measured point
(7.5)(7.5)
Feb. 2009
2
Gate-emitter threshold voltage
Thermal resistance*1
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 200A, VGE = 15V
VCC = 600V, IC = 200A
VGE = ±15V
RG = 1.6Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
IGBT part (1/2 module)
FWDi part (1/2 module)
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
200
400
200
400
830
1300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
W
°C
°C
Vrms
N • m
N • m
g
1
0.7
6.5
—
32
2.7
0.6
—
300
80
500
150
250
—
3.5
0.15
0.24
—
0.095*3
0.14*3
16
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
K/W
Ω
—
—
5.0
5.0
—
—
—
900
—
—
—
—
—
7.5
—
—
—
0.04
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
6V
V
4.5 7.5
ns
Collector cutoff current
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance*4
External gate resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : Case temperature (TC’) measured point is just under the chips.
Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
G-E Short
C-E Short
Operation (Note 2)
Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)
TC = 25°C
TC’ = 25°C*4
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Mounting torque
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
PC’ (
Note 3
)
Tj
Tstg
Viso
—
—
—
Unit
Typ.
Limits
Min. Max.
Test conditions
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
10
–1
10
0
10
1
10
2
2
3
5
7
2
3
5
7
2
3
5
7
14
10
–1
210
0
357 2 10
1
357 2 10
2
357
V
GE = 0V
Cies
Coes
Cres
05101520
VCE = 10V
0
1
6
7
8
9
2
3
4
5
050100 150 200 350 400250 300
Tj = 25°C
Tj = 125°C
VGE = 15V
0
50
100
150
200
250
300
350
400
0246810 0
50
100
150
200
250
300
350
400
VGE=20
(V)
Tj = 25°C
12
9
8
11
10
13
0
2
4
6
8
10
61014188121620
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
10
1
10
2
2
3
5
7
012 435
10
3
2
3
5
7
T
j = 25°C
Tj = 125°C
15
Tj = 25°C
Tj = 125°C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
PERFORMANCE CURVES
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
Tj = 25°C
trr
Irr
10
1
10
2
23 57
10
3
23 57
2
3
5
7
2
3
5
7
10
0
10
2
10
1
10
3
2
3
5
7
td(off)
td(on)
tf
tr
0
5
10
15
20
0 200 400 600 800 1000 1200 1400
VCC = 600V
VCC = 400V
IC = 200A
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
TC = 25°C
Per unit base =
R
th(j–c)
= 0.15K/W
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
TC = 25°C
Per unit base =
R
th(j–c)
= 0.24K/W
10
1
10
2
2
3
5
7
10
3
2
3
5
7
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME trr (ns)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CURRENT Irr (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)