Silicon Low Noise Bipolar Transistors Features (| @ LOW NOISE THROUGH 2.5 GHz @ HERMETIC PACKAGE [3 @ C] @ CAN BE SCREENED TO JAN, JANTX, LJ JANTXV LEVELS oL Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz through 2 GHz. These devices are offered in several dif- ferent families with different fT, Gain and dynamic range characteristics. They are offered in a series of hermetic, R.F. packages and as chips. Also offered are a family of low power, high fT oscillator transistors useful in applica- tions up to 3 GHz. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 323Silicon Low Noise Bipolar Transistors Transistor Selection Guide Nominal Optimum Useful Noise Figure Nominal Frequency Nominal fT at Current Current Ic (Max.) Range Series Geometry (GHz) (mA) Range (mA) (MHz) 42161 72 7.0 3 0.5-7.0 20 500-2500 42111 60 5.5 5 3.0-20.0 125 100-1500 42141 63 4.5 3 1.0-10.0 50 300-2000 42151 63 4.5 3 1.0-10.0 50 300-2000 42000 60 2.5 5 5.0-40.0 125 10-750 42197 60 1.2 5.0-40.0 425 10-750 42020 20 1.8 1 1.0-3.0 40 10-600 42051 55 1.8 2 1.0-5.0 50 10-600 42217 55 1.8 2 1.0-5.0 50 10-600 42120 70 1.5 1 0.9-3.0 80 10-600 42181 02 28 20 10.0-60.0 300 10-1600 NOTE: For more information and S-parameters request Bulletin #5220. Typical Performance Curves 7.0 Vce = 10V Ic =5mA 6.0 5.0 MA42161 SERIES a MA42000 5 SERIES - 40 w MA42141 = SERIES 9 MA42020 uw SERIES MA42111 J w y A SERIES g 3.0 9 YY A ) 20 ! AY ZL "| La} Ltt 1.0 a anne 0 J 2 3 4 5 6 7 8.91.0 2.0 3.0 4.0 5.0 6.0 7.08.09.010.0 FREQUENCY (GHz) FIGURE A. Noise Figure vs. Frequency M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 324Silicon Low Noise Bipolar Transistors Typical Performance Curves (Contd) Pa Vcr = 10V lc =5 mA maa2111 | SERIES PD. 20 N 25 MA4200! N x SERIES A WN a maaz141 NY a GN SERIES ND MA42161 SERIES 10 SS 5 I N NX PK IN Q NN a 2 3 4 5 6 7 8.91.0 2.0 3.0 40 5.0 6.0 7,08.09,010.0 FREQUENCY (GHz) FIGURE B. |S1/? vs. Frequency 100 1.0 90 a 80 8 ._| 0 MA42151 Vce = 15V 7 <__ Ic = 20 mA 50 NY 5 . PN | 30 MA42151 POWER OUT (MILLIWATTS) SERIES POWER OUT (WATTS) 20 NX 3 N MA42191 SERIES MA42191 2 VcB = 20V Ic =50mA SERIES 10 0.5 1.0 15 2.0 2.5 3.0 3.5 4.0 FREQUENCY (GHz) FIGURE C. Common-Base Power Out vs. Frequency M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 325Silicon Low Noise Bipolar Transistors MA42160 Series Description Nominal fT = 7 GHz Nominal Current Range = 0.5 to 7 mA Ic Max. = 20 mA Frequency Range = 500 MHz to 4 GHz Geometry = 72 The MA42161 is a low noise silicon planar epitaxial tran- sistor for.5 to 4.0 GHz amplifiers. These transistors feature high power gain, typically 14.0 dB gain at 2.0 GHz and a low intrinsic noise figure of typically 2.3 dB at 2.0 GHz. These transistors when housed in case style 511, may also be used in low level oscillators from 1-6 GHz. Specifications @ Ta, = 25C Maximum2 Nominal2 Test Maximum? Unilateral Nominal? Gain @ Optimum Model'' Frequency Noise Figure Gain |S21e|? Noise Figure Number (GHz) (dB) (4B) (dB) (dB) MA42161 2.0 2.5 12 8.0 11.0 MA42161 1.0 1.5 18 12.5 15.0 MA42162 2.0 3.0 12 8.0 11.0 MA42162 1.0 1.9 18 12.5 15.0 2N6618 2.0 2.2 12 8.0 11.0 NOTES: 1. 1 dB compression point is-5 dBm. 2. Test conditions IG = IMA, Voge = 10 volts. 3. Nominal current transfer ratio is 80, Io = 10yA. 4. The minimum collector to base breakdown voltage is 20 volts; Io = 10uA. 5. The nominal collector to emitter sustaining voltage is 12 volts; lq = 1.0 mA. 6. Available in ODS 511 & 535 packages. To order, add package as suffix to the model number i.e., MA42161-511 MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Storage Temperature - 65C to +200C Operating Junction Temperature 200C Lead Temperature (60 seconds) 250C Total Device Power Dissipation (Case Style 511) - 0.25W Vebo Collector to Base Voltage 20 V Veeo Collector to Emitter Voltage 12 V Vebo Emitter to Base Voltage 15V I Continuous Collector Current 20 mA ENVIRONMENTAL RATINGS PER MIL-STD 750 Method = Level Storage Temperature 1031 65C to + 200C Temperature Cycle 1051 10 cycles - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 g's Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 326MA42140 Series Descriptio n Nominal fT = 4.5 GHz Nominal Current Range = 1 to 10 mA Io Max. = 50 mA Frequency Range = 300 MHz to 2.0 GHz Geometry = 63 The MA42140 series of NPN silicon planar transistors features excellent high frequency current gain at medium current levels. The MA42141 series has low noise figures from the frequen- cy range of 0.5 to 2 GHz. These transistors are useful in RF amplifiers and low level oscillators from 100 MHz to 2 GHz. Specifications @ T, = 25C Silicon Low Noise Bipolar Transistors Maximum? Maximum Nominal* Model Test Frequency Noise Figure Unilateral Gain By ebo Number Case Style (GHz) (dB) (dB) (Volts) MA42141 509 4.00 2.5 17 15 MA42142 509 1.00 3.0 17 1.6 MA42143 509 0.45 1.7 18 1.5 2N5651 509 0.45 2.0 21 3.5 2N5662 509 0.45 2.5 21 3.5 NOTES: . The standard case style for all the MA42140 series is case style 509. The MA42141, MA42142 and MA42143 are also available in case styles 510 and 51t. To order, add the case style as a suffix to the basic model number, i.e.: MA42142-510). Ip = 10 yA. NOaPh on The collector current = 5 mA. The minimum collector to base breakdown voltage is 27 voits, Iq - 10 pA. The minimum collector to emitter breakdown voltage is 20 volts Ico = 500 pA. The maximum collector cutoff current is 100 NA. Vog = 10 volts. Nominal current transfer ratio is 100, In ~5 mA, Vog 7 10 volts. MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Total Device Power Vebo Collector to Base Voltage 27 V Vebo Emitter to Base Voltage 3V I Collector Current 50 mA Storage Temperature Operating Junction Temperature + 200C Hermeticity 5 X (10)~ cc/sec of He Lead Temperature (Soldering 10 seconds each lead) 250C ENVIRONMENTAL RATINGS PER MIL-STD-750 509 Case ~~ 400 mW Dissipation 510 Case 700 mW 511 Case 700 mW - 65C to + 200C Method Level Storage Temperature 1031 ~ 65C to + 200C Temperature Cycle 1051 10 cycles - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 gs Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 327Silicon Low Noise Bipolar Transistors MA42110 Series Description Nominal ff = 5.5 GHz Nominal Current Range = 3 to 20 mA Io Max. = 125 mA Frequency Range = 100 MHz to 1.5 GHz Geometry = 60 The MA42110 series of silicon NPN bipolar transistors is designed to give a very low noise figure and wide dynamic range up to approximately 4 GHz. Gold metallization is employed in the construction of these devices resulting in rugged, highly reliable transistors. Specifications @ Ta, = 25C Test Maximum? Maximum Nominal? Model Case Frequency Noise Figure Unilateral Gain Minimum Gain @ Opt. NF Number Style (MHz) (db @ mA) (dB) |Soye/? dB MA42111 509 450 1.5 14 13.0 13 MA42111 510 450 1.5 17 15.5 15 MA42111 11 450 1.5 19 16.0 15 MA42112 509 450 1.8 14 13.0 13 MA42112 510 450 1.8 17 15.5 15 MA42112 511 450 1.8 19 16.0 15 MA42113 509 450 2.1 14 13.0 13 MA42113 510 450 2.1 17 15.5 15 MA42113 511 450 2.1 19 16.0 15 NOTES: +. When ordering, specify the desired case style by adding it as a suffix to 5. Minimum |SayE/? is: Vog = 10 volts, Ig ~ 20 mA, and the frequency - the basic model number, i.e., MA42111-510. 2. The maximum noise figure is measured as follows: Voge 7 10 volts Igo = 5mA Frequency = 450 MHz. 3. For the maximum unilateral gain, 1 dB compression point is equal to 0 dBm. 4. Gu (max) (dB) = 10 log QD oe |S21el? (1 |847e/?) (1 - [S22el?) 450 MHz. . The minimum collector current to base breakdown voltage is is 20 volts, where Ic = 10 pA. . The minimum emitter to base breakdown voltage is 1.5 volts, where Ig = 10 pA. . The maximum collector cutoff current is 10 wA, where Vog = 10 volts. . The nominal current transfer ratio is 125 where Voge = 10 volts, Io - SmA. MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Total Device Power 509 Case 450 mW Dissipation 510 Case 1.2 W 511 Case 750 mW Vebo Collector to Base Voltage 20 V Vebo Emitter to Base Voltage 2.5 V Collector Current 125 mA Storage Temperature -65C to +200C Operating Junction Temperature + 200C Hermeticity 5 X (10)- cc/sec of He Lead Temperature (Soldering 10 seconds each lead) 250C ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 ~ 65C to + 200C Temperature Cycle 1051 10 cycles, - 65C to + 200C Shock 2016 500 g's Vibration 2056 15 g's Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 328Silicon Low Noise Bipolar Transistors MA42000 Series Description NPN SILICON PLANAR TRANSISTORS Nominal fT = 2.5 GHz Nominal Current Range = 5 to 40 mA Io Max. = 125 mA This series of NPN silicon bipolar transistors is designed to provide fow noise figures at frequencies fram 10 to 750 MHz. These transistors have flat noise figures over a wide Frequency Range = 10 MHz to 750 GHz Geometry = 60 Specifications @ T, = 25C dynamic range. This series is recommended for such applications as IF and RF amplifiers from 10 to 750 MHz. Test Maximum2 Maximum? Minimum Minimum Model Caset | Frequency | Noise Figure Unilateral Maximum BV bo BV eno Number Style (MHz) (4B @ mA) Gain (dB) cbo (nA) (Volts) (Volts) 2N6665 509 60 10@ 50 28 10 20 2.5 MA42001 509 60 10@ 5.0 28 10 20 2.5 MA42014 509 60 1.3@ 5.0 28 10 20 2.5 MA42002 509 60 1.5@ 50 28 10 20 2.5 MA42004 509 60 1.5 @ 15.0 30 10 20 2.5 MA42003 509 60 2.0 @ 5.0 30 10 20 2.5 MA42005 509 60 2.0 @ 20.0 30 10 20 2.5 MA42006 510 60 4.0 @ 40.0 35 10 20 2.5 MA42008 511 450 20@ 5.0 18 10 20 2.5 MA42009 509 450 25@ 5.0 14 10 20 2.5 MA42010 509 450 3.0 @ 20.0 15 10 20 2.5 MA42011 509 450 3.5 @ 20.0 15 10 20 2.5 MA42010 510 450 3.5 @ 40.0 20 10 20 2.5 MA42011 510 450 4.0 @ 40.0 20 10 20 2.5 MA42015 510 450 4.0 @ 60.0 20 10 20 2.5 MA42016 510 450 4.5 @ 60.0 20 10 20 2.5 MA42012 510 450 5.0 @ 60.0 20 10 20 25 NOTES: 1. The desired case style must be added as a suffix to the model number, i.e., MA42001-509. 2. VCE = 10 Volts. 3. Gu (MAX) (dB) = 10 LOG 4. VCB = 10 Volts. 5. Collector current = 10 pA. [S21E(2 6. Emitter current ~ 10 A. |1-(S11E)2 (1-S22E|2) MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Total Device Power 509 Case 450 mW Dissipation 510 Case 1.2 W 511 Case 750 mw Vebo Collector to Base Voltage 20 V Vebo Emitter to Base Voltage 3 V Collector Current 125 mA Storage Temperature - 65C to + 200C Operating Junction Temperature + 200C Hermeticity 5 X (10)- cc/sec of He Lead Temperature (Soldering 10 seconds each lead) 250C ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 65C to + 200C Temperature Cycle 1051 10 cycles - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 gs Constant Acceleration 2006 20,000 g's Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 329Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description Nominal fT = 1.8 GHz Nominal Current Range ~ 1-5 mA Io Max. = 50 mA Frequency = 10 MHz to 600 MHz Geometry 20 This series of NPN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain amplifiers from 10 to 600 MHz. All these transistors have gold metallization resulting in a rugged, highly reliable transistor. Specifications @ Tg = 25C Maximum Maximum Minimum Minimum? Modelt Test Frequency Noise Figure Unilateral Gain By cbo By lebo Number (MHz) (dB @ mA) (dB) (Volts) (Volts) MA42020 60 1.6 @ 15 23 30 2.5 MA42021 60 2.0 @ 1.5 23 30 2.5 MA42022 60 2.5 @ 1.5 23 30 2.5 MA42023 60 2.0 @ 1.5 23 30 2.5 MA42024 60 3.0 @ 1.5 23 30 2.5 MA42025 450 2.5 @ 1.0 13 30 2.5 MA42026 450 3.0 @ 1.0 10 30 2.5 MA42027 450 3.5 @ 1.0 10 30 2.5 MA42028 450 4.0 @ 15 10 30 2.5 2N5031 450 2.5 @ 1.0 10 30 2.5 2N3570 450 2.5 @ 15 10 30 2.5 2N3953 450 3.0 @ 1.0 10 30 2.5 2N5032 450 3.0 @ 1.0 10 30 2.5 2N3880 450 3.5 @ 1.5 10 30 2.5 2N3839 450 3.9 @ 1.5 10 30 2.5 2N3571 450 4.0 @ 2.0 10 30 2.5 2N5054 450 4.0 @ 2.0 10 30 2.5 2N3683 450 45@15 10 30 2.5 2N2857* 450 45 @15 10 30 2.5 2N5179 450 45 @ 2.0 10 30 2.5 2N5053 450 5.0 @ 2.0 10 30 2.5 2N3572 450 6.0 @ 2.0 10 30 2.5 NOTES: 1. This series of NPN silicon planar transistors is packaged in case style 509. 2. Maximum collector cutoff current is 10 vA, where Yop = 16 volts. 3. The nominal current transfer ratio is 120 where Vog = 1 volt, and Ip - 3 mA. 4. Voge & valts. 5. GU (max) can be derived from S-Parameter data: Gu (Max) (4B) = 10g S21e? (184461?) 0 - [Sa2el?) 6. Io -1 pA. 7. Ig = 10 pA. * This transistor can be screened to JAN level screening. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 330MA42050 Series Description Nominal fT = 1.8 GHz Nominal Current Range = 1to5 mA I Max. = 40 mA Frequency Range = 10 MHz to 600 GHz Geometry = 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF amplifier applications. The refractory gold metallization techniques employed in the construction of these devices results in rugged, highly reliable transistors. This series is recommended for low power oscillators from 100 MHz to 16 GHz. Specifications @ Tg = 25C Silicon Low Nolse Bipolar Transistors Test Maximum Maximum Minimum Minimum Model! Frequency Noise Figure Unilateral BV bo BV obo Number (MHz) (4B @ mA) Gain (dB) (Volts) (Volts) MA42051 450 2.2 @ 3.0 18 20 2.5 MA42052 450 2.5 @ 3.0 18 20 2.5 MA42056 1000 4.5 @ 3.0 1 20 2.5 NOTES: 1. The MA42051 and MA42082 are available in the 509, 510, 511 case styles. The MA42056 is available in tha 510 and 511 case styles. When ordering, specify the desired case style as a suffix to the basic model number, i.e., MA42051-510. |S21E|2 2. Gu (MAX) (dB) = 10LOG {1-[S11E{2 (1-|S22E|2) IC = 10 pA. IE = 10 pA. VCE =1 Volts: IC = 3 mA; Nominal current transfer ratio ~ 75. . VOB = 10 Volts; Maximum collector current = 40.0 mA. ane MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Total Device Power Vebo Collector to Base Voltage Vebo Emitter to Base Voltage Collector Current Storage Temperature Hermeticity Operating Junction Temperature Lead Temperature (Soldering 10 seconds each lead) 509 Case 300 mw 510 Case 450 mW 511 Case 350 mW 20 V 2.5V 40 mA -65C to + 200C 5 X (10)- ce/sec of He + 200C 230C ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 65C to + 200C Temperature Cycle 1051 10 cycles - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 gs Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 331Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT =~ 1.5 GHz Nominal Current Range = .4 to 3 mA Io Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power oscillators up to 4 GHz. The high gain bandwidth products make the MA42122 and MA42123 useful to 1.0 GHz , while the MA42121 has the maximum frequency of oscillation of 4.2 GHz. Two case styles are offered, case stye 508 for low power oscillator applications and case style 509 for small signal IF and RF amplifiers. Specifications @ T, = 25C Maximum? Maximum? Maximum? Minimum Maximum* Frequency Mode!' Case Nolse Figure Unilateral Gain | Gain Bandwidth | Available Gain Oscillation Number Style (dB) Gy (dB) fr (GHz) Ga(dB) (GHz) MA42120 508 13 1.0 3.8 MA42121 508 _ 13 1.3 12.8 4.2 MA42122 509 3.5 14 1.0 _ MA42123 509 3.0 14 1.3 13.8 NOTES: 1. When ordering, specify the package, by adding the case style as a suffix to the basic model number, i.e, MA42120-508. The test frequency for the MA42120 series is 450 MHz. Voge ~ 10 volts, I, = 20 mA, Frequency = 500 MHz. Voe = 10 volts, Io = 20 mA, Frequency = + GHz. The maximum frequency of oscillation is calculated from S-parameters, Fmax is the frequency at which the extrapolated Ga (max) is 0 dB. Io = 10 pA, Ie = 0 The minimum collector to base breakdown voltage is 30 volts. The nominal neutralized power gain for the MA42123-509 is 17.0 dB. The collector current tor the MA42122 and MA42124 is 1.5 mA. a ON OND MAXIMUM RATINGS (Case temperature 25C unless otherwise noted) Total Power Dissipation Vebo Collector to Base Voltage Vebo Emitter to Base Voltage Vees Collector to Emitter Voltage I Collector Current Storage Temperature Operating Junction Temperature Lead Temperature (Soldering 10 seconds each lead) Hermeticity 508 case 1.0W 509 case 5 W 30 V 40V 30 V 80 mA -65C to + 200C + 200C + 250C 5 X (10)-8 ce/sec of He ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 65C to + 200C Temperature Cycle 1051 10 cycles, 65C to + 200C Shock 2016 500 g's Vibration 2056 15 gs Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. | 43 South Ave, Burlington, MA 01803 |_| 800-366-2266 332Silicon Low Noise Bipolar Transistors MA42151 and MA42191 Series Description Nominal fT 4.6 GHz Nominal Current Range - 1 to 10 mA Io Max. = 100 mA Frequency = 300 MHz to 2.0 GHz Geometry = 63 These NPN pianar transistors are characterized for local oscillator use in to 1.0 to 3.0 GHz range. The MA42151 when mounted in a common base package (case style 510) exhibits a typical Fmax of 9.5 GHz at 20 mA collector cur- rent and at 3.0 GHz has a guaranteed power output. The MA42191 in case style 510 exhibits a typical Fmax of Specifications @ Tag = 25C 6.0 GHz at 50 mA collector current and has a guaranteed power output at 2.0 GHz. This transistor is available in the hermetically sealed case style 510 stripline package and meets the MIL-S-19500 environmental ratings and test requirements of MIL-STD-750/883. Minimum Nominal Minimum? Minimum? Minimum* Oscillator Collector Current Model! By By By Power Current Transfer Number cbo ebo ceo (mW) (mA) Ratio (Volts) (Volts) (Volts) MA42151 27 1.5 20 20 50 60 MA42191 30 3.5 25 350 300 40 NOTES: . The standard case style for the MA42151 and MA42191 is case style 510. The MA42151 is also available in the hermetically sealed 511 stripline package and meets the MIL-S-19500 environmental ratings and tests requirements of MIL-STD-750/883. Io = 10 pA for MA42151; Iq = 100 uA for MA42191. Ie = 10 pA. Ig = 500 4A. Iq = 100 yA. Voge = 10 volts; IC = 5 mA Voge = 5 volts: IC = 100 mA. NOop oh MAXIMUM RATINGS FOR MA42191 (Case temperature 25C unless otherwise noted) Total Device Power Vebo Collector to Base Voltage Vebo Emitter to Base Voltage Veeo Collector to Emitter Voitage Collector Current Storage Temperature Hermeticity Operating Junction Temperature Lead Temperature (soldering 10 seconds each lead) 510 case 3.0 W 30V 3.5 V 25 V 300 mA - 65C to + 200C 5 X (10)- cc/sec of He + 200C + 230C ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 - 65C to +200 C Temperature Cycle 1051 10 cycles, - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 gs Constant Acceleration 2006 20,000 gs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 333Siticon Low Noise Bipolar Transistors MA42181 Transistors Description Nominal fT = 2.8 GHz Nominal Current Range = 10 to 60 mA Iq Max. = 300 mA Frequency Range = 10 MHz to 1 GHz Geometry = 02 The MA42181 transistor is designed for wide dynamic range amplifier applications from 100 MHz to 3 GHz. Other applications include second stage high dynamic range amplifiers and low level oscillators. Specifications @ Ty = 25C Minimum! Minimum? Minimum? Compress* Maximum Model Case! By By By Point 1 dB Unilateral I cbo ebo ceo Number Style (Volts) (Volts) (Volts) (dBm) Gain (dB) MA42181 510 30 3.5 25 +25 8.4 NOTES: 1. tg = 100 pA. 2. Ie = 10 yA. 3. Ig = 100 pA. 4. Nominal current transfer ratio is 60; VCE - 15 Volts; IC = 100 mA. 5. VCE = 15 Volts; IC = 60 mA; ZG = ZL ~ 500 Ohms; Frequency = 1 GHz. 6. The nominal |S21E| 2 is 2.0 dB; VCE = 15 Volts; {C = 60 mA; Frequency = 2 GHz. 7. The nominal gain at optimum noise figure is 14.5 dB; VCE = 15 Volts; IC = 60 mA; Frequency = 1 GHz. 8. VCE = 15 Volts; IC = 60 mA; Frequency = 1 GHz. MAXIMUM RATINGS (Case Temperature 25C unless otherwise noted) Total Device Power 510 Case 3.0 mW Vebo Collector to Base Voltage 30 V Vebo Emitter to Base Voltage 25 V Collector Current 300 mA Storage Temperature - 65C to +200C Operating Junction Temperature + 200C Hermeticlty 5 X (10)- cc/sec of He Lead Temperature (Soldering 10 seconds each lead) 230C ENVIRONMENTAL RATINGS PER MIL-STD-750 Method Level Storage Temperature 1031 - 65C to + 200C Temperature Cycle 1051 10 cycles - 65C to + 200C Shock 2016 500 gs Vibration 2056 15 g's Constant Acceleration 2006 20,000 qs Humidity 1021 10 days M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 334Silicon Low Noise Bipolar Transistors Case Styles 506 bt ty | INCHES MILLIMETERS c DIA. 0.350 0.370 8,89 9,40 0.240 260 i 6 1 51 _ 0 == 1,02 0.500 = 12,70 _ 01 . 41 0.190 0.210 4,84 5,33 89 or 3 T= 0.029 0.043 0,74 1 43 a7? 43 0.028 0.034 74 0 507 INCHES MILLIMETERS DIM. MIN. | _MAX. IN. | __ MAX. A 0.209 0.230 5,31 564 B 0.170 0.210 4,32 5,33 C 0.178 0.195 4,52 4,95 D 0.030 _ 0,76 E 0.500 __ 12,70 F 0.016 0.021 0,41 0,53 G 0.090 0.110 2,29 2,75 H 89 a1 Bg 91 J 0.028 0.048 0,71 1,22 K 43 47 43 47 L 0.036 0.046 0,91 117 M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 = 800-366-2266 335Silicon Low Noise Bipotar Transistors Case Styles (Contd) 508 ADIA. INCHES MILLIMETERS pim. | MIN. |_MAX. MIN. | MAX. ks DA A 0.209. | 0.230 531 5,84 j B 0.065 | 0.085 1,65 2,16 l| I C 0.178 | 0.195 4,52 4,95 | | D | 0030 || 0,76 F u E 0.500 12,70 _ r {| | | t F 0.016 | 0.021 0,41 0,53 ( ( E G 0.090 0.110 2,29 2.75 UL H 89 91 89 gr J 0.028 | 0.048 071 1,22 K 43 47 43 47 L 0.036 | 0.046 0,91 117 509 he a DIA. m| INCHES MILLIMETERS lec bla. pim. [_MIN.|_MAX. MIN. |__MAX. - A 0.209 | 0.230 531 5,84 B 0.170 | 0.210 4,32 5,33 B C 0.178 | 0.195 4,52 4,95 { | D 0.020 _ 0,51 [ E 0500 | 12,70 t 4 F 0.016 | 0.019 0,41 0,48 E G 0.090 | 0.110 2,29 2,79 f t H 89 91 89 91 J 0.028 | 0.048 071 1,22 K 43 47 43 47 L 0.036 | 0.046 0,91 1,17 4PLACES (3) COLLECTOR (4) CASE M/A-COM, Inc. w 43 South Ave, Burlington, MA 01803 a 800-366-2266 336Silicon Low Noise Bipolar Transistors Case Styles (Contd) 510 INCHES MILLIMETERS DIM. MIN. _|_MAX. MIN. | MAX. A 0.795 | 0.215 4,95 546 B 0.043 | 0.063 1,09 7,60 C 0.016 0.024 0,44 0.61 D 0.129. | 0.141 3,28 3,58 E 0.0015 | 0.0045 0,04 0,11 F 0.054 0.066 1,37 1,68 G 0.024 0.036 0.61 0,91 H 0.279 0.321 7,09 8,15 J 0.030 REF. 0,76 REF. K 0.150 REF, 0,38 REF. t a f DIA. 511 INCHES MILLIMETERS | C bg DIM. MIN. [| MAX. MIN. | MAX. COLLECTOR (t- A 0.095 0.105 2,41 2,68 : B 0.050 == 1,27 . . Cc 0.016 0.024 0,41 0.61 y oN b D 0.036 0.044 00 1,12 D { {| A E 0.002 | 0.006 0,05 0,15 7 a, Y F 0.190 0.260 4,83 6,60 EMITTER ce BASE B k ' Yoecs ye M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 EE 800-366-2266 337