MCCSEMI.COM
Rev.3-3-12012020 1/4
PNP
Plastic Encapsulate
Transistor
BCX53,BCX53-10,BCX53-16
Features
Internal Structure
Marking:
BCX53=AH,
BCX53-10=AK
BCX53-16=AL
Collector Current IC
-1.0
A
Collector Power Dissipation PC
500
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Unit
Collector-Base Voltage VCBO -100 V
Parameter Symbol Rating
• Operating Junction Temperature Range: -55℃ to +150℃
•Storage Temperature Range: -55℃ to +150℃
• Thermal Resistance: 250 ℃/W Junction to Ambient
Maximum Ratings
•Halogen Free. “Green” Device (Note 1)
• Moisture Sensitivity Level 1
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Suggested Solder Pad Layout
inches
mm
B
A
F
L
GH
K
J
C
D
E
1 2 3
2.600
0.102
1.400
0.055
4.400
0.173
3.200
0.126
1.900
0.075
0.800
0.032
0.900
0.035
1.500
0.059
1.400
0.055
MIN MAX MIN MAX
A0.169 0.185 4.30 4.70
B0.061 1.55
C 0.154 0.171 3.91 4.35
D 0.031 0.047 0.80 1.20
E0.089 0.104 2.25 2.65
F0.118 3.00 TYP.
G 0.013 0.020 0.33 0.52
H 0.015 0.021 0.38 0.53
J0.014 0.017 0.35 0.44
K 0.055 0.063 1.40 1.60
DIMENSIONS
DIM INCHES MM NOTE
L0.059 1.50TYP.
TYP.
L
SOT-89
E
BC
950
mW(Note3)
1350
mW(Note4)
mW(Note2)
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2.Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, t
in-plated and standard footprint.
3.Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad
for collector 1 cm2.
4.Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad
for collector 6 cm2.
MCCSEMI.COM
Rev.3-3-12012020 2/4
Electrical Characteristics @ 25°C Unless Otherwise Specified
Emitter-Base Cutoff Current IEBO VEB=-5V, IC=0
Base-Emitter Saturation Voltage(Note5)VBE(sat)
IC=-500mA, IB=-50mA
Collector-Emitter Saturation Voltage
(Note5)
VCE(sat) -0.5V
hFE3
VCE=-2V, IC=-150mA
DC Current Gain(Note5)
hFE1
63 250
VCE=-2V, IC=-500mA
hFE2
40
IE=-100µA, IC=0
Collector Cutoff Current ICBO -0.1μAVCB=-30V, IE=0
Emitter-Base Breakdown Voltage V(BR)EBO -5 V
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage(Note5)
V(BR)CEO -80 V IC=-10mA, IB=0
Collector-Base Breakdown Voltage V(BR)CBO -100 V
Parameter Symbol Min Typ Max Units Conditions
VCE=-2V, IC=-5mA
63
IC=-500mA, VCE=-2.0V
-1.0V
VCE=-5V, IC=-10mA, f=100MHz
Transition Frequency fT50MHz
BCX53,BCX53-10,BCX53-16
-0.1μA
63 160
100 250
BCX53
BCX53-10
BCX53-16
Note：
5.Pulse Test
DC Current Gain(Note5
DC Current Gain(Note5)
MCCSEMI.COM
Curve Characteristics
BCX53,BCX53-10,BCX53-16
MCCSEMI.COM
Rev.3-3-12012020
Curve Characteristics
BCX53,BCX53-10,BCX53-16
3/4
-0 -1 -2 -3 -4 -5 -6
-100
-200
-300
-0
-400
IB=-0.2mA
Common Emitter
TA=25°C
Collector Current (mA)
Collector-Emitter Voltage (V)
Fig. 1 - Static Characteristics
-2.0mA
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
-1 -10 -100 -1000
10
100
1000
Common Emitter
VCE= - 2V
TA=100°C
DC Current Gain
Collector Current (mA)
Fig. 2 - DC Current Gain Characteristics
TA=25°C
-0.1 -1 -100 -1000
-200
-400
-600
-800
-0
-1000
β=10
TA=100°C
Base-Emitter Saturation Voltage (mV)
-10
Collector Current (mA)
Fig. 3 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
-1 -100-0.1 -1000
-100
-200
-300
-0
-400
β=10
T
A
=100°C
Collector-Emitter Saturation Voltage (mV)
-10
Collector Current (mA)
Fig. 4 - Collector-Emitter Saturation Voltage Characteristics
T
A
=25°C
-1
-10
-100
-0.1
-1000
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0
V
CE
= - 2V
T
A
=100°C
T
A
=25°C
Base-Emitter Voltage (V)
Collcetor Current (mA)
Fig. 5 - Base-Emitter Voltage Characteristics
0 25 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Collector Power Dissipation (W)
50 75 100
Ambient Temperature (°C)
Fig. 6 - Collector Power Derating Curve
MCCSEMI.COM
Rev.3-3-12012020 4/4
Ordering Information
Device Packing
Part Number-TP Tape&Reel: 1Kpcs/Reel
BCX53,BCX53-10,BCX53-16
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