P01xxxL (R) SENSITIVE GATE SCR FEATURES n n IT(RMS) = 0.2A VDRM = 100V to 200V A G K DESCRIPTION High performance planar technology. These parts are intended for general purpose applications where low gate sensitivity is required. SOT-23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) * RMS on-state current (180 conduction angle) Ta= 25C 0.26 A IT(AV) * Mean on-state current (180 conduction angle) Ta= 25C 0.17 A tp = 8.3 ms 7 A tp = 10 ms 6 tp = 10 ms 0.18 A 2s 30 A/s - 40, + 150 - 40, + 125 C 260 C ITSM 2 I t Non repetitive surge peak on-state current (Tj initial = 25C ) 2 I t Value for fusing dI/dt Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Tstg Tj Storage and operating junction temperature range Tl Maximum lead temperature for soldering during 10s * Epoxy board FR4, recommended pad layout Voltage Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125C RGK = 1K April 2000 - Ed: 1A Unit A B 100 200 V 1/6 P01xxxL THERMAL RESISTANCES Symbol Rth(j-a)* Parameter Value Unit 400 C/W Junction to ambient * Epoxy board FR4, recommended pad layout GATE CHARACTERISTICS (maximum values) PG (AV)= 0.02 W PGM = 1 W (tp = 20 s) IGM = 0.5 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Sensitivity Symbol IGT VD=12V (DC) RL=140 Tj= 25C MAX 02 09 200 1 A VGT VD=12V (DC) RL=140 Tj= 25C MAX 0.8 V VGD VD=VDRM RL=3.3k RGK = 1 K Tj= 125C MIN 0.1 V IRG =10A Tj= 25C MIN 8 V tgd VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA Tj= 25C TYP 0.5 s IH IT= 50mA RGK = 1 K Tj= 25C MAX 6 mA IL IG=1mA RGK = 1 K Tj= 25C MAX 7 mA VTM ITM= 0.4A tp= 380s Tj= 25C MAX 1.7 V IDRM IRRM VD = VDRM RGK = 1 K VR = VRRM Tj= 25C MAX 1 A Tj= 125C MAX 100 A dV/dt VD = 67%VDRM RGK = 1 K Tj= 125C MIN dI/dt=10A/s ITM= 3 x IT(AV) VR=35V tp=100s dV/dt=10V/s VD= 67%VDRM RGK = 1 K Tj= 125C MAX VRGM tq 2/6 Unit Test Conditions 200 100 200 V/s s P01xxxL Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb). P (W) 0.25 P (W) 0.25 360 O 0.20 0.20 Rth(j-a) DC 0.15 0.15 = 180 = 120 0.10 = 90 = 60 0.05 = 30 0.00 0.00 0.04 0.08 o o 0.10 o o 0.05 IT(AV)(A) o 0.12 0.16 o Tamb ( C) 0.20 0.00 0 20 40 60 80 100 120 140 Fig.3 : Average on-state current versus tab temperature. Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. I T(AV) (A) 0.25 1.00 Zth(j-a)/Rth(j-a) 0.20 o = 180 0.15 0.10 Alumine substrate: 10mm*8mm*0.5mm 0.10 0.05 o tp(s) Tamb ( C) 0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] 0.01 1E-3 1E-2 1E-1 1E+1 1E+0 1E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 o 10.0 9.0 7 8.0 6 Tj initial = 25 C 7.0 5 6.0 Igt 5.0 4 4.0 3 3.0 2.0 2 Ih 1 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 1,000 3/6 P01xxxL Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 10 Tj initial = 25oC Tj initial o 25 C I TSM 10 Tj max 1 Tj max Vto =0.95V Rt =0.600 1 I2 t VTM (V) tp(ms) 0.1 1 10 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk=1k ) 5.0 Tj=25 o C 1.0 Rgk( ) 0.1 1.0E+ 00 1.0E+01 1.0E+ 02 1. 0E+ 03 1.0E+04 1.0E+ 05 1. 0E+ 06 4/6 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 P01xxxL PACKAGE MECHANICAL DATA SOT-23 (Plastic) A E DIMENSIONS REF. e D e1 B S A1 L H Millimeters Inches Min. Max. Min. Max. A 0.89 1.4 0.035 0.055 A1 0 0.1 0 0.004 B 0.3 0.51 0.012 0.02 c 0.085 0.18 0.003 0.007 D 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 e1 1.7 2.1 0.067 0.083 E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108 L S 0.6 typ. 0.35 0.65 0.024 typ. 0.014 0.026 c FOOT PRINT 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 5/6 P01xxxL MARKING Type Marking P0102AL P2A P0102BL P2B P0109AL P9A P0109BL P9B Package Weight Delivery mode Base qty SOT-23 0.01g Tape & Reel 3000 ORDERING INFORMATION P SCR Planar 01 02 A L Sensitivity 5xA4 Tape & Reel Package: L = SOT23 Voltage Current Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6