BFR35AP NPN Silicon RF Transistor * For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 * Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 45 Base current IB 4 Total power dissipation1) Ptot 280 mW Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS 88 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 220 K/W 1T S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-06-25 BFR35AP Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 A ICBO - - 100 nA IEBO - - 100 A hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V, pulse measured 2 2012-06-25 BFR35AP Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 3.5 5 - Ccb - 0.39 0.55 Cce - 0.23 - Ceb - 0.64 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz - 1.4 - f = 1.8 GHz - 2 - IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 16 - f = 1.8 GHz - 10.5 - Power gain, maximum available1) Gma |S21e|2 Transducer gain dB IC = 15 mA, VCE = 8 V, ZS = Z L = 50, f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - 2 1/2 ma = |S21 /S12| (k-(k -1) ) 1G 3 2012-06-25 BFR35AP Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 300 250 K/W RthJS 225 200 175 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) Ptotmax/P totDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2012-06-25 Package SOT23 BFR35AP 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2012-06-25 BFR35AP Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2012-06-25