Datasheet
○Product structure：Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays
1/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
TSZ22111・14・001
www.rohm.com
1 Channel Compact High Side Switch ICs
Current Limit High Side Switch ICs
BD226xG-M Series
General Description
BD226xG-M series are low on-resistance N-channel
MOSFET high-side power switches, optimized for
Universal Serial Bus (USB) applications. BD226xG-M
series are equipped with the function of over-current
detection, thermal shutdown, under-voltage lockout
and soft-start.
Features
AEC-Q100 Qualified
Over Current Protection
0.3A: BD2262G-M
0.76A: BD2264G-M / BD2265G-M
0.97A: BD2266G-M / BD2267G-M
Built-in Low ON-Resistance (Typ 120mΩ)
N-Channel MOSFET
Reverse Current Protection when
Power Switch Off
Thermal Shutdown
Under-Voltage Lockout
Open-Drain Error Flag Output
Output Discharge Function
Soft Start Circuit
Control Input Logic
Active-High:
BD2262G-M /BD2264G-M /BD2266G-M
Active-Low:
BD2265G-M /BD2267G-M
Applications
Key Specifications
Input Voltage Range: 2.7V to 5.5V
ON-Resistance: 120mΩ(Typ)
Over-Current Threshold: 0.3A, 0.76A, 0.97A
Standby Current: 0.01µA (Typ)
Operating Temperature Range: -40°C to +85°C
Package W(Typ) D(Typ) H(Max)
Car accessory, Industrial applications
Typical Application Circuit
Lineup Over-Current Threshold
Min Typ Max Control Input
Logic Package Orderable Part Number
0.2A 0.3A 0.4A High SSOP5
Reel of 3000
BD2262G-MGTR
0.63A 0.76A 0.9A High SSOP5
Reel of 3000
BD2264G-MGTR
0.63A 0.76A 0.9A Low SSOP5
Reel of 3000
BD2265G-MGTR
0.82A 0.97A 1.12A High SSOP5
Reel of 3000
BD2266G-MGTR
0.82A 0.97A 1.12A Low SSOP5
Reel of 3000
BD2267G-MGTR
SSOP5
2.90mm x 2.80mm x 1.25mm
10kΩ to
100kΩ
C
L
CIN IN
GND
EN
OUT
/OC
5V (Typ)
+
-
3.3V
Datasheet
BD226xG-M Series
2/34 TSZ02201-0R5R0H300010-1-
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© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Block Diagram
Pin Configurations
Pin Description
Pin No.
Symbol I/O
Function
1 IN - Switch input and the supply voltage for the IC.
2 GND - Ground.
3 EN, /EN
I Enable input.
EN: High level input turns on the switch.(BD2262G-M, BD2264G-M, BD2266G-M)
/EN: Low level input turns on the switch. (BD2265G-M, BD2267G-M )
4 /OC O Over-current detection terminal.
Low level output during over-current or over-temperature condition.
Open-drain fault flag output.
5 OUT O Switch output.
IN
OUT
TOP VIEW
IN
GND
EN,/EN
OUT
/OC
1
2
3 4
5
Datasheet
BD226xG-M Series
3/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Rating Unit
IN Supply Voltage VIN -0.3 to +6.0 V
EN(/EN) Input Voltage VEN, V/EN
-0.3 to +6.0 V
/OC Voltage V/OC -0.3 to +6.0 V
/OC Sink Current I/OC 5 mA
OUT Voltage VOUT -0.3 to +6.0 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation Pd 0.67(Note 1) W
(Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1°C above 25°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Recommended Operating Conditions Rating
Parameter Symbol Min Typ Max Unit
IN Operating Voltage VIN 2.7 5.0 5.5 V
Operating Temperature Topr -40 - +85 °C
Electrical Characteristics
(VIN= 5V, Ta= 25°C, unless otherwise specified.)
DC Characteristics Limit
Parameter Symbol Min Typ Max Unit
Conditions
- 135 175 VEN = 5V (BD2262G-M)
VOUT = open
Operating Current IDD - 110 160 µA VEN = 5V (BD2264/ 66G-M)
V/EN = 0V (BD2265/ 67G-M)
VOUT = open
Standby Current ISTB - 0.01 5 µA VEN = 0V (BD2262/ 64/ 66G-M)
V/EN = 5V (BD2265/ 67G-M)
VOUT = open
VENH(/ENH)
2.0 - - V High Input, VIN=3.3 to 5V
VENL(/ENL)
- - 0.8 V Low Input, VIN=5V
EN Input Voltage VENL(/ENL)
- - 0.6 V Low Input, VIN=3.3V
EN Input Leakage IEN(/EN) -1 +0.01
+1 µA VEN(/EN) = 0V or 5V
- 120 165 VIN=5V
IOUT = 100mA (BD2262G-M)
IOUT = 500mA (BD2264/ 65/ 66/ 67G-M)
ON-Resistance RON - 140 190 mΩ VIN=3.3V
IOUT = 100mA (BD2262G-M)
IOUT = 500mA (BD2264/ 65/ 66/ 67G-M)
Reverse Leak Current IREV - - 1.0 µA VOUT = 5.0V, VIN = 0V
200 300 400 VIN = 5V
190 290 390 VIN = 3.3V BD2262G-M
630 765 900 VIN = 5V
600 740 890 VIN = 3.3V BD2264/ 65G-M
820 970 1120 VIN = 5V
Over-Current Threshold ITH
730 940 1110
mA
VIN = 3.3V BD2266/ 67G-M
100 200 300 BD2262G-M
350 500 650 BD2264/ 65G-M Short Circuit Output Current ISC 500 650 850 mA VIN=3.3 to 5V
VOUT = 0V, RMS BD2266/ 67G-M
Output Discharge Resistance
RDISC 30 60 120 Ω IDISC = 1mA
/OC Output Low Voltage V/OC - - 0.4 V I/OC = 0.5mA
VTUVH 2.1 2.3 2.5 V VIN Increasing
UVLO Threshold VTUVL 2.0 2.2 2.4 V VIN Decreasing
Datasheet
BD226xG-M Series
4/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
tON1 tOFF1
90%
10%
10%
tON2 tOFF2
VENH
V
ENL
90%
VEN
VOUT
tON1 tOFF1
90%
10%
10%
tON2 tOFF2
V
/ENL V/ENH
90%
V/EN
VOUT
AC Characteristics Limit
Parameter Symbol Min Typ Max Unit Conditions
Output Rise Time tON1 - 1 6 ms
Output Turn ON Time tON2 - 1.5 10 ms
Output Fall Time tOFF1 - 1 20 µs
Output Turn OFF Time tOFF2 - 3 40 µs
BD2262G-M:
RL = 500Ω
BD2264/ 65/ 66/ 67G-M:
RL = 20Ω
/OC Delay Time t/OC 10 15 20 ms
Measurement Circuit
IN
GND
EN(/EN)
OUT
/OC
V
IN
V
EN(/EN)
A
1µF
IN
GND
EN(/EN)
OUT
/OC
V
IN
V
EN(/EN)
A
1µF
R
L
A. Operating Current B. EN, /EN Input Voltage, Output Rise / Fall Time
IN
GND
EN(/EN)
OUT
/OC
V
IN
V
EN(/EN)
A
1µF
I
OUT
10k
Ω
IN
GND
EN(/EN)
OUT
/OC
V
IN
V
EN(/EN)
A
1µF
I
OC
C. ON-Resistance, Over-Current Detection D. /OC Output Low Voltage
Figure 1. Measurement Circuit
Timing Diagram
Figure 3. Output Rise / Fall Time
(BD2265G-M, BD2267G-M)
Figure 2. Output Rise / Fall Time
(BD2262G-M, BD2264G-M, BD2266G-M)
Datasheet
BD226xG-M Series
5/34 TSZ02201-0R5R0H300010-1-
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TSZ22111・15・001
Typical Performance Curves
(BD226xG-M)
Figure 4. Standby Current vs Supply Voltage
(EN, /EN Disable)
0.0
0.2
0.4
0.6
0.8
1.0
23456
Ta=25°C
Supply Voltage : VIN[V]
Standby Current : ISTB[µA]
Figure 5. Standby Current vs Ambient Temperature
(EN, /EN Disable)
0.0
0.2
0.4
0.6
0.8
1.0
-50 0 50 100
VIN=5.0V
Ambient Temperature : Ta[°C]
Standby Current : ISTB[µA]
Figure 7. EN, /EN Input Voltage vs
Ambient Temperature
(VENH, VENL, V/ENH, V/ENL)
0.0
0.5
1.0
1.5
2.0
-50 0 50 100
VIN=5.0V
Low to High
High to Low
Ambient Temperature : Ta[°C]
Enable Input Voltage : VEN, V/EN[V]
Figure 6. EN, /EN Input Voltage vs
Supply Voltage
(VENH, VENL, V/ENH, V/ENL)
0.0
0.5
1.0
1.5
2.0
2 3 4 5 6
Ta=25°C
Low to High
High to Low
Supply Voltage : VIN[V]
Enable Input Voltage : VEN, V/EN[V]
Datasheet
BD226xG-M Series
6/34 TSZ02201-0R5R0H300010-1-
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03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD226xG-M)
Figure 8. ON-Resistance vs Supply Voltage
0
50
100
150
200
2 3 4 5 6
Ta=25°C
Supply Voltage : VIN[V]
ON-Resistance : RON[mΩ]
Figure 9. ON-Resistance vs Ambient Temperature
0
50
100
150
200
-50 0 50 100
VIN=5.0V
Ambient Temperature : Ta[°C]
ON-Resistance : RON[mΩ]
Figure 10. /OC Output Low Voltage vs
Supply Voltage
0
20
40
60
80
100
2 3 4 5 6
Ta=25°C
Supply Voltage : VIN[V]
/OC Output Low Voltage: V/OC [mV]
Figure 11. /OC Output Low Voltage vs
Ambient Temperature
Ambient Temperature : Ta[°C]
/OC Output Low Voltage: V/OC [mV]
0
20
40
60
80
100
-50 0 50 100
VIN=5.0V
Datasheet
BD226xG-M Series
7/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
0.0
0.2
0.4
0.6
0.8
1.0
-50 0 50 100
Typical Performance Curves - continued
(BD226xG-M)
Figure 12. UVLO Threshold Voltage vs
Ambient Temperature
2.0
2.1
2.2
2.3
2.4
2.5
-50 0 50 100
VTUVH
VTUVL
UVLO Threshold: VTUVH, VTUVL [V]
Ambient Temperature: Ta [°C]
Figure 13. UVLO Hysteresis Voltage vs
Ambient Temperature
UVLO Hysteresis Voltage: VHYS[V]
Ambient Temperature: Ta [°C]
Figure 14. /OC Delay Time vs
Supply Voltage
10
12
14
16
18
20
2 3 4 5 6
SUPPLY VOLTAGE : VIN[V]
/OC DDLAY TIME : T/OC[ms]
Ta=25°C
/OC DELAY TIME : t
/OC[ms]
/OC Delay Time: t/OC [ms]
Supply Voltage: VIN [V]
Figure 15. /OC Delay Time vs
Ambient Temperature
10
12
14
16
18
20
-50 0 50 100
AMBIENT TEMPERATURE : Ta[℃]
/OC DDLAY TIME : T/OC[ms]
VIN=5.0V
/OC DELAY TIME : t
/OC[ms]
/OC Delay Time: t/OC [ms]
Ambient Temperature: Ta [°C]
Datasheet
BD226xG-M Series
8/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD226xG-M)
Figure 16. Output Discharge Resistance
vs
Supply Voltage
0
50
100
150
200
2 3 4 5 6
Ta=25°C
Supply Voltage: VIN [V]
Output Discharge Resistance: RDISC [Ω]
Figure 17. Output Discharge Resistance
vs
Ambient Temperature
0
50
100
150
200
-50 0 50 100
VIN=5.0V
Ambient Temperature: Ta [°C]
Output Disharge Resistance: RDISC [Ω]
Datasheet
BD226xG-M Series
9/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2262G-M)
Figure 18. Operating Current vs Supply Voltage
EN Enable
0
20
40
60
80
100
120
140
160
23456
Supply Voltage : VIN [V]
Operating Current : I DD [µA]
Ta=25°C
Figure 19. Operating Current vs Ambient
Temperature
EN Enable
0
20
40
60
80
100
120
140
160
-50 0 50 100
Ambient Temperature : Ta [°C]
Operating Current : I DD [µA]
VIN=5.0V
Figure 20. Over-Current Threshold
vs
Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
2 3 4 5 6
Supply Voltage : V
IN
[V]
Over Current Threshold : I
TH
[A]
Ta=25°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
-50 0 50 100
Ambient Temperature : Ta [°C]
Over Current Threshold : ITH [A]
Figure 21. Over-Current Threshold
vs
Ambient Temperature
V
IN
=5.0V
Datasheet
BD226xG-M Series
10/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2262G-M)
Figure 24. Output Turn-on Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
23456
Supply Voltage : VIN [V]
Turn On Time : TON2 [ms]
Ta=25°C
Figure 22. Output Rise Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
23456
Supply Voltage : VIN [V]
Rise Time : TON1 [ms]
Ta=25°C
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta [°C]
Turn On Time : TON2 [ms]
Figure 25. Output Turn-on Time vs
Ambient Temperature
VIN=5.0V
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta [°C]
Rise Time : TON1 [ms]
Figure 23. Output Rise Time vs
Ambient Temperature
VIN=5.0V
Datasheet
BD226xG-M Series
11/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2262G-M)
Figure 28. Output Turn-off Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
6.0
2 3 4 5 6
Supply Voltage : VIN [V]
Turn-off Time : TOFF2 [µs]
Ta=25°C
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Supply Voltage : VIN [V]
Fall Time : TOFF1 [µs]
Figure 26. Output Fall Time vs
Supply Voltage
Ta=25°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-50 0 50 100
Ambient Temperature : Ta [°C]
Turn-off Time : T OFF2 [µs]
Figure 29. Output Turn-off Time vs
Ambient Temperature
VIN=5.0V
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta [°C]
Fall Time : TOFF1 [µs]
Figure 27. Output Fall Time vs
Ambient Temperature
VIN=5.0V
Datasheet
BD226xG-M Series
12/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2 3 4 5 6
Ta=25°C
Figure 32. Over-Current Threshold
vs
Supply Voltage
Supply Voltage: VIN [V]
Over Current Threshold: I
TH
[A]
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50 0 50 100
VIN=5.0V
Figure 33. Over-Current Threshold
vs
Ambient Temperature
Over Current Threshold: I
TH
[A]
Ambient Temperature: Ta [°C]
0
20
40
60
80
100
120
140
2 3 4 5 6
Ta=25°C
Figure 30. Operating Current vs Supply Voltage
(EN, /EN Enable)
Operating Current : IDD[µA]
Supply Voltage : VIN[V]
Ambient Temperature: Ta [°C]
Operating Current : IDD[µA]
0
20
40
60
80
100
120
140
-50 0 50 100
VIN=5.0V
Figure 31. Operating Current vs Ambient Temperature
(EN, /EN Enable)
Datasheet
BD226xG-M Series
13/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Figure 36. Output Turn-On Time vs
Supply Voltage
Turn
O
n
Time
: T
ON
2
[ms]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 37. Output Turn-On Time vs
Ambient Temperature
Tur
n
O
n
Time
: T
ON
2
[ms]
Ambient Temperature: Ta [°C]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 35. Output Rise Time vs
Ambient Temperature
Rise Time
: T
ON1
[ms]
Ambient Temperature: Ta [°C]
Figure 34. Output Rise Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Rise Time
: T
ON1
[ms]
Supply Voltage: VIN [V]
Datasheet
BD226xG-M Series
14/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2264G-M, BD2265G-M)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
23456
Ta=25°C
Figure 40. Output Turn-Off Time vs
Supply Voltage
Turn
O
ff
Time
: T
O
FF2
[
µ
s]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-50 0 50 100
VIN=5.0V
Figure 41. Output Turn-Off Time vs
Ambient Temperature
Turn
O
ff
Time
: T
O
FF2
[
µ
s]
Ambient Temperature: Ta [°C]
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Figure 38. Output Fall Time vs
Supply Voltage
Fall
Time
: T
O
FF1
[
µ
s]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 39. Output Fall Time vs
Ambient Temperature
Fall
Time
: T
O
FF1
[
µ
s]
Ambient Temperature: Ta [°C]
Datasheet
BD226xG-M Series
15/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
2 3 4 5 6
Ta=25°C
Figure 44. Over-current threshold vs
Supply Voltage
Over Current Threshold:
I
TH
[A]
Supply Voltage: VIN [V]
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50 0 50 100
VIN=5.0V
Figure 45. Over-current threshold vs
Ambient Temperature
Over Current Threshold:
I
TH
[A]
Ambient Temperature: Ta [°C]
0
20
40
60
80
100
120
140
2 3 4 5 6
Ta=25°C
Figure 42. Operating Current vs Supply Voltage
(EN, /EN Enable)
Operating Current : IDD[µA]
Supply Voltage : VIN[V]
Ambient Temperature: Ta [°C]
Operating Current : IDD[µA]
0
20
40
60
80
100
120
140
-50 0 50 100
VIN=5.0V
Figure 43. Operating Current vs Ambient Temperature
(EN, /EN Enable)
Datasheet
BD226xG-M Series
16/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
www.rohm.com
TSZ22111・15・001
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Figure 48. Output turn-on time vs
Supply Voltage
Turn
O
n
Time
: T
ON
2
[ms]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 49. Output turn-on time vs
Ambient Temperature
Turn
O
n
Time
: T
ON
2
[ms]
Ambient Temperature: Ta [°C]
Figure 46. Output rise time vs Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Rise Time
: T
ON1
[ms]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 47. Output rise time vs Ambient Temperature
Rise Time
:
T
ON1
[ms]
Ambient Temperature: Ta [°C]
Datasheet
BD226xG-M Series
17/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
Typical Performance Curves - continued
(BD2266G-M, BD2267G-M)
Turn
O
ff
Time
: T
O
FF2
[
µ
s]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
6.0
23456
Ta=25°C
Figure 52. Output turn-off time vs
Supply Voltage
Turn
O
ff
Time
: T
O
FF2
[
µ
s]
Ambient Temperature: Ta [°C]
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-50 0 50 100
VIN=5.0V
Figure 53. Output turn-off time vs
Ambient Temperature
0.0
1.0
2.0
3.0
4.0
5.0
2 3 4 5 6
Ta=25°C
Figure 50. Output fall time vs Supply Voltage
Fall
Time
: T
O
FF1
[
µ
s]
Supply Voltage: VIN [V]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
VIN=5.0V
Figure 51. Output fall time vs Ambient Temperature
Fall
Time
: T
O
FF1
[
µ
s]
Ambient Temperature: Ta [°C]
Datasheet
BD226xG-M Series
18/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms
(BD2262G-M)
TIME (5ms/div.)
Figure 57. Over-Current Response
Ramped Load
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
VIN=5V
TIME (1ms/div.)
Figure 56. Inrush Current Response
(5V/div.)
VEN
IOUT
(100mA/div.)
CL=22uF
CL=47uF
CL=100uF
VIN=5V
RL=50Ω
V/OC
(5V/div.)
TIME (1us/div.)
Figure 55. Output Fall Characteristic
VEN
(5V/div.)
VIN=5V
RL=500Ω
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(10mA/div.)
TIME (1ms/div.)
Figure 54. Output Rise Characteristic
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RL=500Ω
IOUT
(10mA/div.)
Datasheet
BD226xG-M Series
19/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2262G-M)
TIME (5ms/div.)
Figure 60. Over-Current Response
1Ω Load to Enabled Device
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(1A/div.)
VIN=5V
TIME (5ms/div.)
Figure 58. Over-Current Response
Enable to Shortcircuit
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.2A/div.)
TIME (500ms/div.)
Figure 59. Over-Current Response
Enable to Shortcircuit
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.2A/div.)
TIME (5ms/div.)
Figure 61. UVLO Response
Increasing VIN
VIN
(5V/div.)
VOUT
(5V/div.)
RL=500Ω
IOUT
(10mA/div.)
Datasheet
BD226xG-M Series
20/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2262G-M)
TIME (10ms/div.)
Figure 62. UVLO Response
Decreasing VIN
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(10mA/div.)
RL=500Ω
Datasheet
BD226xG-M Series
21/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2264G-M)
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
VIN=5V
TIME (5ms/div.)
Figure 66. Over-Current Response Ramped Load
TIME (1ms/div.)
Figure 65. Inrush Current Response
(5V/div.)
VEN
IOUT
(0.2A/div.)
V/OC
(5V/div.)
CL=47µF
CL=100µF
CL=220µF
VIN=5V
RL=20Ω
TIME(1µs/div.)
Figure 64. Output Fall Characteristic
VEN
(5V/div.)
VIN=5V
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.) RL=20Ω
TIME(1ms/div.)
Figure 63. Output Rise Characteristic
RL=20Ω
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.5A/div.)
Datasheet
BD226xG-M Series
22/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2264G-M)
TIME (5ms/div.)
Figure 69. Over-Current Response
1Ω Load Connected at EN
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(1A/div.)
VIN=5V
TIME (10ms/div.)
Figure 70. UVLO Response when
Increasing V
IN
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
RL=20Ω
TIME (100ms/div.)
Figure 68. Over-Current Response
Enable to Short Circuit
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
VIN=5V
TIME (5ms/div.)
Figure 67. Over-Current Response
Enable to Short Circuit
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
VIN=5V
VIN=5V
Datasheet
BD226xG-M Series
23/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2264G-M)
TIME (10ms/div.)
Figure 71. UVLO Response when
Decreasing V
IN
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.) RL=20Ω
Datasheet
BD226xG-M Series
24/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2266G-M)
VEN
(5V/div.)
VIN=5V
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
TIME(1ms/div.)
Figure 72. Output rise characteristic
VEN
(5V/div.)
VIN=5V
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
TIME(1us/div.)
Figure 73. Output fall characteristic
TIME (1ms/div.)
Figure 74. Inrush current response TIME (5ms/div.)
Figure 75. Over-current response
ramped load
(5V/div.)
VEN
IOUT
(0.2A/div.)
V/OC
(5V/div.)
CL=47uF
CL=100uF
CL=220uF
VIN=5V
RL=20Ω
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
VIN=5V
RL=20Ω
RL=20Ω
Datasheet
BD226xG-M Series
25/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2266G-M)
TIME (5ms/div.)
Figure 76. Over-current response
enable to shortcircuit
TIME (100ms/div.)
Figure 77. Over-current response
enable to shortcircuit
TIME (5ms/div.)
Figure 78. Over-current response
1Ω load to enabled device
TIME (10ms/div.)
Figure 79. UVLO response
increasing VIN
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.5A/div.)
VIN=5V
V/OC
(5V/div.)
VOUT
(5V/div.)
IOUT
(1A/div.)
VIN=5V
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.)
RL=20Ω
VEN
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VIN=5V
IOUT
(0.5A/div.)
Datasheet
BD226xG-M Series
26/34 TSZ02201-0R5R0H300010-1-
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TSZ22111・15・001
Typical Wave Forms – continued
(BD2266G-M)
TIME (10ms/div.)
Figure 80. UVLO response
decreasing VIN
VIN
(5V/div.)
VOUT
(5V/div.)
IOUT
(0.2A/div.) RL=20Ω
Datasheet
BD226xG-M Series
27/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Typical Application Circuit
Controller
10kΩ to
100kΩ
C
L
C
IN
IN
GND
EN(/EN)
OUT
/OC
5V (Typ)
+
-
Application Information
When excessive current flows due to output short-circuit or so, ringing occurs by inductance of power source line and IC.
This may cause bad effects on IC operations. In order to avoid this case, a bypass capacitor (CIN) should be connected
across the IN terminal and GND terminal of IC. A 1µF or higher value is recommended. Moreover, in order to decrease
voltage fluctuations of power source line and IC, connect a low ESR capacitor in parallel with CIN. A 10µF to 100µF or higher
is effective.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up values for CL which satisfies the application.
This application circuit does not guarantee its operation.
When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external
components including AC/DC characteristics as well as dispersion of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal
is also used as power source input to internal control circuit.
When the switch is turned ON from EN(/EN) control input, the IN and OUT terminals are connected by a 120mΩ (Typ)
switch. In ON status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of IN
terminal, current flows from OUT to IN terminal. On the other hand, when the switch is turned off, it is possible to prevent
current from flowing reversely from OUT to IN terminal since a parasitic diode between the drain and the source of switch
MOSFET is not present.
2. Thermal Shutdown Circuit (TSD)
If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature goes
beyond 135°C (Typ) in the condition of over-current detection, thermal shutdown circuit operates and turns power switch
off, causing the IC to output a fault flag (/OC). Then, when the junction temperature decreases lower than 115°C (Typ),
the power switch is turned on and fault flag (/OC) is cancelled. This operation repeats, unless the increase of chip’s
temperature is removed or the output of power switch is turned OFF.
The thermal shutdown circuit operates when the switch is ON (EN(/EN) signal is active).
3. Over-Current Detection (OCD)
The over-current detection circuit limits current (ISC) and outputs fault flag (/OC) when current flowing in each switch
MOSFET exceeds a specified value. The over-current detection circuit works when the switch is on (EN(/EN) signal is
active). There are three types of response against over-current:
(1) When the switch is turned on while the output is in short circuit status, the switch goes into current limit status
immediately.
(2) When the output short-circuits or high capacity load is connected while the switch is on, very large current
flows until the over-current limit circuit reacts. When the current detection and limit circuit operates, current
limitation is carried out.
(3) When the output current increases gradually, current limitation would not operate unless the output current
exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried
out.
Datasheet
BD226xG-M Series
28/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ). If VIN drops below 2.2V(Typ) while the
switch is still ON, then UVLO shuts off the power switch. UVLO has a hysteresis of 100mV(Typ).
Under-voltage lockout circuit operates when the switch is on (EN(/EN) signal is active).
5. Fault Flag (/OC) Output
Fault flag output is N-MOS open drain output. During detection of over-current and/or thermal shutdown, the output level
will turn low.
Over-current detection has delay filter. This delay filter prevents current detection flags from being sent during
instantaneous events such as inrush current at switch on or during hot plug. If fault flag output is unused, /OC pin should
be connected to open or ground line.
Figure 81. Over-Current Detection
VEN
VOUT
IOUT
V
/OC
Output
S
hort
C
ircuit
Thermal
S
hutdown
/OC Delay Time
Figure 82. Over-Current Detection, Thermal Shutdown Timing (BD2262G-M, BD2264G-M, BD2266G-M)
V/EN
V
OUT
I
OUT
V
/OC
Output
S
hort
C
ircuit
Thermal
S
hutdown
/OC Delay Time
Figure 83. Over-Current Detection, Thermal Shutdown Timing (BD2265G-M, BD2267G-M )
VOUT
IOUT
V/OC
t/OC
Over Current
Detection
ISC
Over Current
Load Removed
ITH
Datasheet
BD226xG-M Series
29/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
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www.rohm.com
TSZ22111・15・001
Power Dissipation
(SSOP5 Package)
Figure 84. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Symbol Pin No. Equivalence Circuit
EN
(/EN) 3
EN
(/EN)
OUT 5 VOUT
/OC 4
/OC
70mm x 70mm x 1.6mm Glass Epoxy Board
85
OUT
0
100
200
300
400
500
600
700
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta [℃]
POWER DISSIPATION : Pd [mW]
Power Dissipation :
Pd[mW]
Ambient Temperature : Ta[°C]
Datasheet
BD226xG-M Series
30/34 TSZ02201-0R5R0H300010-1-
2
© 2014 ROHM Co., Ltd. All rights reserved.
03.Feb.2014 Rev.001
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TSZ22111・15・001
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7. In rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
Datasheet
BD226xG-M Series
31/34 TSZ02201-0R5R0H300010-1-
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TSZ22111・15・001
Operational Notes - continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 85. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of
use.
N N
P+PN N
P+
P Substrate
GND
NP+N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
EParasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)Resistor
N Region
close-by
Parasitic
Elements
Datasheet
BD226xG-M Series
32/34 TSZ02201-0R5R0H300010-1-
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© 2014 ROHM Co., Ltd. All rights reserved.
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TSZ22111・15・001
Ordering Information
B D
2 2 6 x G
- M G T R
Part Number
BD2262G
BD2264G
BD2265G
BD2266G
BD2267G
Package
G: SSOP5 Product Rank
M: for Automotive
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
Marking Diagram
Part Number Part Number Marking
BD2262G-M Z0
BD2264G-M Z1
BD2265G-M Z2
BD2266G-M Z3
BD2267G-M Z4
Part Number Marking
SSOP5 (TOP VIEW)
LOT Number
Datasheet
BD226xG-M Series
33/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
Physical Dimension, Tape and Reel Information
Package Name SSOP5
Datasheet
BD226xG-M Series
34/34 TSZ02201-0R5R0H300010-1-
2
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TSZ22111・15・001
Revision History
Date Revision Changes
03.Feb.2014 001 New Release
Datasheet
Datasheet
Notice - SS Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice - SS Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccur acy or errors of or
concerning such information.
