New Product V20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS (R) * Trench MOS Schottky technology TO-220AB * Low forward voltage drop, low power losses TO-262AA * High efficiency operation K * Solder dip 275 C max. 10 s, per JESD 22-B106 * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3 1 V20150C 1 2 3 * Halogen-free according to IEC 61249-2-21 definition VI20150C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 150 V IFSM 120 A VF at IF = 10 A 0.69 V TJ max. 150 C Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89151 Revision:23-Mar-11 VI20150C 150 UNIT V 20 per device Maximum average forward rectified current (fig. 1) V20150C IF(AV) A 10 IFSM 120 A dV/dt 10 000 V/s TJ, TSTG - 55 to + 150 C For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20150C, VI20150C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 C IF = 10 A Instantaneous forward voltage per diode SYMBOL VF (1) IF = 5 A TA = 25 C VR = 100 V TA = 125 C Reverse current per diode IR (2) TA = 25 C VR = 150 V MAX. UNIT 0.79 - 1.05 1.20 0.59 - 0.69 0.75 1.3 - A 1.2 - mA - 150 A 3 15 mA V20150C VI20150C UNIT V TA = 125 C IF = 10 A TYP. TA = 125 C Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode 2.8 RJC C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20150C-M3/4W TO-262AA VI20150C-M3/4W UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.88 4W 50/tube Tube 1.45 4W 50/tube Tube 1.88 4W 50/tube Tube 1.45 4W 50/tube Tube (1) TO-220AB V20150CHM3/4W TO-262AA VI20150CHM3/4W (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 D = 0.5 Resistive or Inductive Load 20 Average Power Loss (W) Average Forward Rectified Current (A) 25 15 10 5 D = 0.8 D = 0.3 8 D = 0.2 6 D = 1.0 D = 0.1 4 T 2 Mounted on Specific Heatsink D = tp/T tp 8 10 0 0 0 25 50 75 100 125 150 175 0 2 4 6 12 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89151 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision:23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20150C, VI20150C Vishay General Semiconductor 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 125 C TA = 100 C 1 TA = 25 C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 10 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) 100 TA = 150 C TA = 125 C 1 TA = 100 C 0.1 0.01 TA = 25 C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Document Number: 89151 Revision:23-Mar-11 Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20150C, VI20150C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 30 (TYP.) (REF.) 0.250 (6.35) MIN. 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) www.vishay.com 4 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) For technical questions within your region, please contact one of the following: Document Number: 89151 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision:23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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