TIC116 SERIES SILICON CONTROLLED RECTIFIERS 8 A Continuous On-State Current 80 A Surge-Current TO-220 PACKAGE (TOP VIEW) Glass Passivated Wafer 400 V to 800 V Off-State Voltage K 1 Max IGT of 20 mA A 2 G 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING Repetitive peak off-state voltage TIC116D TIC116M SYMBOL VDRM E T E L O S B O TIC116S TIC116N TIC116D Repetitive peak reverse voltage Continuous on-state current at (or below) 70C case temperature (see Note 1) TIC116M TIC116S TIC116N Average on-state current (180 conduction angle) at (or below) 70C case temperature (see Note 2) Surge on-state current at (or below) 25C case temperature (see Note 3) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds VRRM IT(RMS) VALUE 400 600 700 MDC1ACA UNIT V 800 400 600 700 800 V 8 A IT(AV) 5 A ITM 80 A PGM 5 W TC -40 to +110 C TL 230 C IGM PG(AV) Tstg 3 1 -40 to +125 A W C NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC116 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current TEST CONDITIONS VD = rated VDRM MIN MAX UNIT TC = 110C 2 mA 2 mA 20 mA VR = rated VRRM IG = 0 TC = 110C VAA = 12 V RL = 100 tp(g) 20 s VAA = 12 V RL = 100 TC = - 40C TYP 8 2.5 tp(g) 20 s VGT Gate trigger voltage VAA = 12 V RL = 100 0.8 tp(g) 20 s VAA = 12 V RL = 100 TC = 110C 0.2 tp(g) 20 s VAA = 12 V IH Holding current TC = - 40C 100 Initiating IT = 100 mA mA VAA = 12 V 40 Initiating IT = 100 mA VT dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage IT = 8 A (see Note 5) 1.7 E T E L O S B O VD = rated VD IG = 0 TC = 110C V 400 V/s 5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 V 1.5 TYP MAX UNIT 3 C/W 62.5 C/W APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC116 SERIES SILICON CONTROLLED RECTIFIERS THERMAL INFORMATION AVERAGE ON-STATE CURRENT MAX ANODE POWER LOSS vs ON-STATE CURRENT DERATING CURVE 12 0 180 Conduction 10 Continuous DC Angle 8 6 = 180 4 2 40 50 60 TI03AB 100 TJ = 110C 10 1 E T E L O S B O 70 80 90 100 110 0*1 0*1 1 10 100 TC - Case Temperature - C IT - Continuous On-State Current - A Figure 1. Figure 2. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI03AC 100 10 RJC(t) - Transient Thermal Resistance - C/W IT(AV) - Maximum Average On-State Current - A 14 0 30 ITM - Peak Half-Sine-Wave Current - A PA - Max Continuous Anode Power Dissipated- W TI03AA 16 10 TC 70C No Prior Device Conduction Gate Control Guaranteed 1 TI03AD 1 0*1 1 10 100 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. Figure 4. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 100 3 TIC116 SERIES SILICON CONTROLLED RECTIFIERS TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC03AA TC03AB 1 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA VAA =12 V RL = 100 tp(g) 20 s 10 0*8 0*6 0*4 VAA =12 V RL = 100 E T E L O S B O 0*2 1 -50 -25 0 25 50 75 100 tp(g) 20 s 0 -50 125 -25 Figure 5. 50 75 100 125 Figure 6. PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT HOLDING CURRENT vs CASE TEMPERATURE TC03AD 10 TC03AE 2*5 VTM - Peak On-State Voltage - V VAA = 12 V Initiating IT = 100 mA IH - Holding Current - mA 25 TC - Case Temperature - C TC - Case Temperature - C 100 0 TC = 25 C tP = 300 s Duty Cycle 2 % 2 1*5 1 0*5 1 -50 -25 0 25 50 75 TC - Case Temperature - C Figure 7. 100 125 0 0*1 1 100 Figure 8. 4 10 ITM - Peak On-State Current - A APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.