International HEXFET Power MOSFETs NTE PAT ea BEST EEE TOR Rectitier D Vopryoss D Continuous p Drain-fo-Source DS(on} Continuous Drain Current D Fax Breakdown On-State Drain Current 100 Mox. Thermal Max. Power on Case Part Voltage Resistance = 5C Resistunce Dissipation Demand Outline | Number () (Q (A) (A) (C/W) Number Key | Through-Hole Packages 10-220AB IRFBF30 900 37 3.4 23 0 125 90616 HIS IRFBG20 1000 li 1.4 0.86 2.3 54 90604 IRFBG30 1000 $.0 3.1 2.0 1.0 125 90620 P-Channel IRF9Z24N 55 0.175 -12 -8.5 3.3 45 91484 His IRF9Z34N -55 0.10 -17 -12 2.7 56 91485 [IRF5305 -55 0.06 -3] -22 1.4 110 91385 [RF4905 -55 0.02 -64 -45 1.0 150 91280 IRF9530N - 100 0.20 -13 -92 2.0 75 91482 IRF9540N -100 O.117 -19 -13 1.6 o4 91437 IRFS210 -100 0.06 -35 -25 10 150 91434 IRF6215 -150 0.29 tl -7.8 18 &3 91479 ** Not ruted HEXDIP Pak Hlustrations not to scale Me TO-220AB * TO-220 FullPak of < of TO-247