AO3407A 30V P-Channel MOSFET General Description Product Summary The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -4.3A RDS(ON) (at VGS=-10V) < 48m RDS(ON) (at VGS =-4.5V) < 78m VDS SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: Nov 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V -25 PD TA=70C 20 -3.5 IDM TA=25C Power Dissipation B Units V -4.3 ID TA=70C Maximum -30 RJA RJL www.aosmd.com -55 to 150 Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3407A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -30 -1 TJ=55C -5 Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 nA -2.4 V 34 48 52 68 VGS=-4.5V, ID=-3A 54 78 10 TJ=125C gFS Forward Transconductance VDS=-5V, ID=-4.3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.7 DYNAMIC PARAMETERS Input Capacitance Ciss Rg A 100 Static Drain-Source On-Resistance Output Capacitance Units -1.9 VGS=-10V, ID=-4.3A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz S V -2 A 520 pF 100 pF pF 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-4.3A 3.5 m -1 65 VGS=0V, VDS=0V, f=1MHz m 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=3.5, RGEN=3 5.5 ns 19 ns 7 ns IF=-4.3A, dI/dt=100A/s 11 Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/s 5.3 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5 AO3407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 VDS=-5V -6V 25 25 -10V -4.5V 20 -ID(A) -ID (A) 20 15 15 -4V 10 10 5 125C 0 0 0 1 2 3 4 0.5 5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 1.8 Normalized On-Resistance 70 VGS=-4.5V 60 RDS(ON) (m ) 25C 5 VGS=-3.5V 50 40 30 VGS=-10V 20 VGS=-10V ID=-4.3A 1.6 1.4 17 5 2 10 =-4.5V 1.2 VGS ID=-3A 1 0.8 10 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=-4.3A 1.0E+01 100 40 125C 80 -IS (A) RDS(ON) (m ) 1.0E+00 125C 60 1.0E-01 1.0E-02 25C 1.0E-03 40 25C 1.0E-04 1.0E-05 20 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-4.3A 8 Ciss Capacitance (pF) -VGS (Volts) 600 6 4 400 Coss 200 2 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 100.0 TA=25C 10s RDS(ON) limited 100s 1ms 1.0 10ms 10ms 0.1 30 Power (W) ID (Amps) 10.0 10 10s TJ(Max)=150C TA=25C 20 DC 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PD PD 0.01 Ton Single Pulse Ton T T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Nov 2011 www.aosmd.com Page 4 of 5 AO3407A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 5: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5