AO3407A
30V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -4.3A
R
DS(ON)
(at V
GS
=-10V) < 48mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 78mΩ
Symbol
V
DS
The AO3407A uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-30V
Drain-Source Voltage -30
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
63 125
80
T
A
=25°C
T
A
=70°C
Pulsed Drain Current
C
Continuous Drain
Current A
I
D
-4.3
-3.5
-25
V±20Gate-Source Voltage
Parameter Typ Max Units
°C
°C/W
R
θJA
70
100 90
Maximum Junction-to-Ambient
A
Thermal Characteristics
Power Dissipation
B
P
D
T
A
=25°C W
1.4
0.9
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev 5: Nov 2011
www.aosmd.com Page 1 of 5
AO3407A
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.4 -1.9 -2.4 V
I
D(ON)
-25 A
34 48
T
J
=125°C 52 68
54 78 mΩ
g
FS
10 S
V
SD
-0.7 -1 V
I
S
-2 A
C
iss
520 pF
C
oss
100 pF
C
rss
65 pF
R
g
3.5 7.5 11.5 Ω
Q
g
(10V) 9.2 11 nC
Q
g
(4.5V) 4.6 6 nC
Q
gs
1.6 nC
Q
gd
2.2 nC
t
D(on)
7.5 ns
5.5
ns
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
I
D
=-250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Drain-Source Breakdown Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
On state drain current V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.3A
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-4.3A
Gate Source Charge
Gate Drain Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4.3A
V
GS
=-4.5V, I
D
=-3A
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
V
=-10V, V
=-15V, R
=3.5
Ω
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
r
5.5
ns
t
D(off)
19 ns
t
f
7 ns
t
rr
11 ns
Q
rr
5.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=-4.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Turn-Off Fall Time
Turn-Off DelayTime V
GS
=-10V, V
DS
=-15V, R
L
=3.5
Ω
,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=-4.3A, dI/dt=100A/µs
Turn-On Rise Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 5: Nov 2011 www.aosmd.com Page 2 of 5
AO3407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-4.5V
ID=-3A
VGS=-10V
ID=-4.3A
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
0
5
10
15
20
25
30
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-
6V
-10V -4.5V
40
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-4.5V
ID=-3A
VGS=-10V
ID=-4.3A
20
40
60
80
100
120
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-4.3A
25°C
125°C
0
5
10
15
20
25
30
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-
6V
-10V -4.5V
Rev 5: Nov 2011 www.aosmd.com Page 3 of 5
AO3407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 5 10 15 20 25 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-4.3A
0
10
20
30
40
0.0001 0.01 1 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
10ms
0
2
4
6
8
10
0 2 4 6 8 10
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 5 10 15 20 25 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-4.3A
0
10
20
30
40
0.0001 0.01 1 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
T
on
T
P
D
Rev 5: Nov 2011 www.aosmd.com Page 4 of 5
AO3407A
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT
L
Vgs
Diode Recovery Test Circuit & Waveforms
Vds -
Vds + rr
Q = - Idt
t
rr
-Isd
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 5: Nov 2011
www.aosmd.com
Page 5 of 5