MJ10015 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,

high–speed, power switching in inductive circuits where fall time is critical. They are

particularly suited for line–operated switchmode applications such as:

•Switching Regulators

•Motor Controls

•Inverters

•Solenoid and Relay Drivers

•Fast Turn–Off Times

1.0 µs (max) Inductive Crossover Time — 20 Amps

2.5 µs (max) inductive Storage Time — 20 Amps

•Operating Temperature Range –65 to +200

•Performance Specified for

Reversed Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJ10015

ÎÎÎÎÎÎ

MJ10016

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

400

ÎÎÎÎÎÎ

500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎ

600

ÎÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎÎ

8.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continous

— Peak (1)

ÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

250

143

1.43

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎÎÎ

0.7

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ10015/D

 Motorola, Inc. 1995





50 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 AND 500 VOLTS

250 WATTS

CASE 197–05

TO–204AE TYPE

(TO–3 TYPE)

≈

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0, Vclamp = Rated VCEO) MJ10015

MJ10016

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

500

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.25

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

350

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎ

See Figure 7

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎ

See Figure 8

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 20 Adc, VCE = 5.0 Vdc)

(IC = 40 Adc, VCE = 5.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)

(IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.2

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.75

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage (2)

(IF = 20 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTIC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

750

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 20 A,

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.14

ÎÎÎÎ

0.3

ÎÎÎ

µs

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 20 A,

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎÎ

2.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2%).

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

C = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,

VBE(off) = 5.0 Vdc)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

2.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,

VBE(off) = 5.0 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

0.36

ÎÎÎÎ

1.0

ÎÎÎ

µs

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2%.

(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

 

Motorola Bipolar Power Transistor Device Data

V, VOLTAGE (VOLTS)

–0.2

VBE, BASE–EMITTER VOLTAGE (VOLTS)

2.8

IC, COLLECTOR CURRENT (AMP)

2.4

2.0

1.6

1.2

IC/IB = 10

100

0.5

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5.0 1.0 2.0 5.0 10 20 50

Figure 2. Collector–Emitter Saturation Voltage

0.5 IC, COLLECTOR CURRENT (AMP)

0.4 2.0 5.0

1.2

0.8

hFE, DC CURRENT GAIN

TC = 25

VCE = 5.0 V

10 20 50

Figure 3. Base–Emitter Saturation Voltage

+0.20.5 1.0 2.0 10 50205.0

Figure 4. Collector Cutoff Region

2.4

2.0

1.6

Figure 5. Output Capacitance

1500

0.4 VR, REVERSE VOLTAGE (VOLTS)

100 10

1000

100 400

200

FORWARD

0.8

VCE = 250 V

100

REVERSE

TJ = 125

1.0 4.0 40

300

500

TJ = 150

TJ = 25

104

103

102

101

100

10–1

, OUTPUT CAPACITANCE (pF)

1.0

, COLLECTOR CURRENT ( A)

ICV, VOLTAGE (VOLTS)

IC/IB = 10

TJ = 150

TJ = 25

+0.4 +0.6 +0.8

TJ = 25

TYPICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus) VCEX AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

Ω

PW Varied to Attain

IC = 100 mA

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 250 V

RL = 12.5 Ω

Pulse Width = 25 µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

IB1

5 V

INDUCTIVE TEST CIRCUIT

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

IC(pk) tf Clamped

tft

TIME

VCE or

Vclamp

TUT

VCC

t1 ≈Lcoil (ICpk)

VCC

t2 ≈Lcoil (ICpk)

VClamp

*Adjust –V such that VBE(off) = 5 V except as required for RBSOA (Figure 8).

Figure 6. Inductive Switching Measurements

trv

TIME

VCE 90% IB1

tsv

IC pk Vclamp

90% Vclamp 90% IC

10% Vclamp 10%

IC pk 2% IC

tfi tti

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10

–

90% Vclamp

tfi = Current Fall Time, 90

–

10% IC

tti = Current Tail, 10

–

2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222:

PSWT = 1/2 VCC IC (tc) f

In general, t rv + tfi

tc. However, at lower test currents

this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified and has become a benchmark for de-

signers. However, for designers of high frequency converter

circuits, the user oriented specifications which make this a

“SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed.

 

Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 7 and 8 are

specified ratings for these devices under the test conditions

shown.

1.0

Figure 7. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 50

0.005

2.0

1.0

5.0

0.5

100010 100

Figure 8. Reverse Bias Switching Safe

Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0200 300

400

TC = 25

IC, COLLECTOR CURRENT (AMPS)

0.1

200

IC, COLLECTOR CURRENT (AMPS)

2.0 20 500

0.2

0.02

0.01

500

VBE(off) = 5.0 V

TC = 25

MJ10015

0.05

TURN–OFF LOAD LINE

BOUNDARY FOR MJ10016

THE LOCUS FOR MJ10015

IS 100 V LESS

IB1

BONDING WIRE LIMIT

THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

MJ10016

100

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two Iimitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 7 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 7 may be found at any case tem-

perature by using the appropriate curve on Figure 9.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current condition allowable dur-

ing reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 8 gives the complete RBSOA

characteristics.

Figure 9. Power Derating

TC, CASE TEMPERATURE (

040 80

100

120

POWER DERATING FACTOR (%)

160 200

THERMAL

DERATING

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

1 2 3 4 5 6

, BASE CURRENT (AMP)IB2(pk)

SEE TABLE 1 FOR CONDITIONS,

FIGURE 6 FOR WAVESHAPE.

7 8

Figure 10. Typical Reverse Base Current

versus VBE(off) With No External Base

Resistance

IC = 20 A

FORWARD BIAS

SECOND BREAKDOWN

DERATING

 

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197–05

TO–204AE TYPE

(TO–3 TYPE)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

D2 PL

SEATING

PLANE

–T–

0.25 (0.010) Y M

–Y–

HGB

–Q–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.510 1.550 38.35 39.37

B0.980 1.050 24.89 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.135 1.52 3.43

G0.420 0.440 10.67 11.18

H0.205 0.225 5.21 5.72

K0.440 0.480 11.18 12.19

L0.655 0.675 16.64 17.15

N0.760 0.830 19.30 21.08

Q0.151 0.175 3.84 4.19

U1.177 1.197 29.90 30.40

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MJ10015/D

*MJ10015/D*

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