Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPSA27 Unit
Collector–Emitter Voltage VCES 60 Vdc
Emitter–Base V oltage VEBO 10 Vdc
Collector Current — Continuous IC500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0) V(BR)CES 60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0) V(BR)CBO 60 — — Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
ICBO — — 100 nAdc
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
ICES — — 500 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc) IEBO — — 100 nAdc
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1 1Publication Order Number:
MPSA27/D
MPSA27
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
123
COLLECTOR 3
BASE
2
EMITTER 1
MPSA27
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE 10,000
10,000 —
——
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 0.1 mAdc) VCE(sat) — — 1.5 Vdc
Base–Emitter On Voltage
(IC = 100 mA, VCE = 5.0 Vdc) VBE(on) — — 2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) hfe 1.25 2.4 — —
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
MPSA27
http://onsemi.com
3
Figure 1. DC Current Gain Figure 2. “ON” Voltages
Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain
Figure 5. Active Region — Safe Operating Area
100 1 k1.0
IC, COLLECTOR CURRENT (mA)
120
100
80
60
IC, COLLECTOR CURRENT (mA)
100 1 k1.0
1.4
1.0
0.8
0.6
100 5001.0
IB, BASE CURRENT (A)
1.1
1.0
0.9
0.8
0.7
IC, COLLECTOR CURRENT (mA)
1.00.5
1.0
2.0
0.8
0.6
0.4
0.2
2.0200
2.0 101.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 k
200
100
50
20
10
4.0
VCE = 5.0 V
hFE, DC CURRENT GAIN (k)
V, VOLTAGE (VOLTS)
V
h , SMALL-SIGNAL CURRENT GAIN
40
20
0102.0 3.0 20 30 200 500
TA = 125°C
TA = 25°C
TA = -55°C
200 5002.0 10 20
1.2
1.6 TA = 25°C
VBE(S) @ IC/IB = 1.0 k
VCE(S) @ IC/IB = 1.0 k
VBE(ON) @ VCE = 5.0 V
2.0 5.0 10 20 50 10 20 100 200
, COLLECTOR CURRENT (mA)IC
20 50
500
1.0 ms
1.0 s
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100 s
TC = 25°C
TA = 25°C
IC = 10 mA
IC = 100 mA IC = 250 mA
IC = 500 mA
1 k0.1 0.2 0.5
1.3
1.2
1.4
1.6
1.5
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
4.0
5.0 50050
VCE = 5.0 V
f = 100 MHz
TA = 25°C
6.0 40 60
3.0 30
fe
MPSA27
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 029–11
(TO–226AA)
ISSUE AD
C
R
N
N
1
J
SECTION X–X
D
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
PL
F
B
K
G
H
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.44 5.21
B0.290 0.310 7.37 7.87
C0.125 0.165 3.18 4.19
D0.018 0.021 0.457 0.533
F0.016 0.019 0.407 0.482
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.018 0.024 0.46 0.61
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.135 --- 3.43 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MPSA27/D
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
