| Ordering number: EN 2041A | 28B1144/2SD1684 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp, Medium-Speed Switching Applications Features - Adoption of FBET and MBIT processes. - High breakdown voltage - Low saturation voltage. - Plastic-covered heat sink facilitating high-density mounting. ( ):28B1144 Absolute Maximum Ratings at Ta=25C unit Collector-to-Base Voltage Vcso ()120 Vv Collector-to-Emitter Voltage VcEo ()100 V Emitter-to-Base Voltage VEBO ()6 Vv Collector Current Ic (-)1.5 A Collector Current (Pulse) Icp ()2.0 A Collector Dissipation Pc 1.5 WwW Tce=25C 10 WwW Junction Temperature Tj 150 C Storage Temperature Tstg ~ 55 to +150 C Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Iczo Vop=()100V, Ig=0 ()100 nA Emitter Cutoff Current Teno Vep=()4V, Ic =0 ()100 nA DC Current Gain hpg) = Veg=()5V,I=()100mA 1002% 400% hpp(2)) = Vog=()5V,Ig=(-)1A 30 Gain Bandwidth Product fy Ver=()10V, Ic=(-)50mA (100) MHz 120 MHz Output Capacitance Cob Vcp=()10V, f=1MHz (18) pF 11 pF C-E Saturation Voltage Verisat) Ic=()500mA, Ip=()50mA (180)(500) mV 100 300 mV B-E Saturation Voltage VeR(sat) I=()500mA, Ip=()50mA (-}0.85(-)1.2 V C-B Breakdown Voltage Veerycpo Ic=()10pA, Ip=0 ()120 Vv C-E Breakdown Voltage Vipryceo Ic=()1mA, Rpz=% ()100 Vv E-B Breakdown Voltage Vipreso In=()10uA, Ic =0 (}6 Vv Continued on next page. * : The 25B1144/25D1684 are classified by 100mA hpp as follows : {100 Q 200 | 140 s 280 | 200 T 400 | Switching Time Test Circuit Package Dimensions 2042B . (unit : mm) PWe2us _!B1 t.0- ne? 1% INPUT =n w [nim nm} J be 48+ 4 N A + sv Sv 7 = 1: Emitter = =- = J Ig =10Ig; = 101g. =500mA i I eT ~ 2: Collector oS Unit (Resistance : 2, Capacitance : F) 3: Base SANYO: TO1L26ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN Me 7997076 0016409 153 MH = 10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041-1/42SB1144/2SD 1684 Continued from preceding page. min typ max unit Rise Time ton See specified Test Circuit. (80) ns v 80 ns Storage Time tstg a (750) ns W 1000 ns Fall Time te ma (40) ns a 50 ns Collector Current,I; A 0 71 2 -3 <4 -5 Collector-to-Emitter Voltage, Vor V 0 Ic Vee 7. 28Bi144 = oh 70.8 __pyot, i Ah = 0.6 8 3mA 5 o QmA & -0.4 _ 3 v=) imA 2.0.2 0 =0 0 -10 -20 - -40 Collector-to-Emitter Voltage,Vop V 16 Ic Vpe (SSB1144 | Vcr=5V <3 Hf - // i : [fl eo E-0.8 5 ! | s of @ ole} 2 Ie B 8 -0.4 fy al n Ie 0 AZ 0 -0.2 -0.4 -0.6 -0.8 -1.0 ~1.2 Base-to-Emitter Voltage, Vpp V me 7997076 OOLb410 175 Ic Vee "8 ospie84 nN Collector Current,I, A rn @ 0 0 1 2 3 4 5 Collector-to-Emitter Voltage, Vo; V Ic Vee 25D1684 a @ Collector Current,Io A nN 0 B=0 0 10 20 30 40 Collector-to-Emitter Voltage, Vcr V 16 Ic Vee *"|28D1684 Vor=5V {I ~ Po ee =) eo Pe, | a] a Collector Current,I>p A & a 0 a) 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage,Vpp V No.2041-2/425B1144/2SD 1684 Collector-to-Emitter here Ie 1000 id4 Vcr=5V <5) fe Fh & os 100 5 5 5 oO oO a 10 01 - FO eH FAQ Te = Collector Current,Ip A fr $ 1000 T c 25B1144/2SD1684 Vcr=10V 2SD1684 100 2SB11 10 Gain-Bandwidth Product,fp MHz is omitted. 0.1 1.0 Collector Current,I; A Vce(sat) Ic For 0.01 , minus 95C Saturation Voltage, Vorjeay) mV =9pC 01 HeOQY h S r3 F410 7 Collector Current,I; A Vee(sat) Ic Saturation Voltage, Vapieay ~ V Base-to-Emitter 01 - t-O.1 - F-10 ~e Collector Current,I; A Collector-to-Emitter Base-to-Emitter hre Ic 4000 DC Current Gain,hpp 3 So 10 1.0 0.1 Collector Current,Ip A Cob Vcp 0.01 8 1144/28D1684 Output Capacitance,Cob pF 3 2 For , minus sign is o 1.0 10 100 Collector-to-Base Voltage, Vcp V Vce(sat) Ic 1684 I/g=10 3 3 ~ Oo oO 25C Ta =75C Saturation Voltage, Vopjeat) mV 0.01 0.1 1.0 Collector Current,Ig ~ A 10 VBe(sat) ~ Ic 28D1684 Ic/Ip=10 Saturation Voltage, Vpyjsat) ~ V 0.1 1.0 Collector Current,I, A 0.01 m 7997076 OO1b411 5601 = No.2041-3/42$B1144/2SD1684 A Collector Current,I Oo 0.01 1144/2SD 1684 - Oo Collector Dissipation,P>5 W 1.0 10 100 Collector-to-Emitter Voltage,Vcy V Ambient Temperature, Ta C One W@ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, Me 7997076 OOlbYle 746 No.2041-4/4 92195