VN20NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
■OUTPUT CURRENT (CONTINUOUS):
33A @ Tc=25oC
■5V LOGIC LEVEL COMPATIBLE INPUT
■THERMAL SHUT-DOWN
■UNDER VOLTAGE SHUT-DOWN
■OPEN DRAIN DIAGNOSTIC OUTPUT
■VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN20NSP is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
September 1994
BLOCK DIAGRAM
TYPE VDSS RDS(on) IOUT VCC
VN20NSP 60 V 0.05 Ω33 A 26 V
1
10
Power SO-10
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ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Breakdown Voltage 60 V
IOUT Output Current (cont.) 33 A
IRReverse Output Current -33 A
IIN Input Current ±10 mA
-VCC Reverse Supply Voltage -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Ptot Power Dissipation at Tc≤25 oC100W
T
j
Junction Operating Temperature -40 to 150 oC
Tstg Storage Temperature -55 to 150 oC
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN20NSP
2/9
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max 1.25
50
oC/W
oC/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤Tj≤125 oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC Supply Voltage 7 26 V
Ron On State Resistance IOUT =14A
I
OUT =14A T
j=25o
C0.1
0.05 Ω
Ω
ISSupply Current Off State Tj≥25 oC
On State 50
15 µA
mA
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time Of
Output Current IOUT = 14 A Resistive Load
Input Rise Time < 0.1 µsT
j
=25o
C30 µs
trRise Time Of Output
Current IOUT = 14 A Resistive Load
Input Rise Time < 0.1 µsT
j
=25o
C70 µs
td(off) Turn-off Delay Time Of
Output Current IOUT = 14 A Resistive Load
Input Rise Time < 0.1 µsT
j
=25o
C40 µs
tfFall Time Of Output
Current IOUT = 14 A Resistive Load
Input Rise Time < 0.1 µsT
j
=25o
C30 µs
(di/dt)on Turn-on Current Slope IOUT =14A
I
OUT =I
OV 0.5
2A/µs
A/µs
(di/dt)off Turn-off Current Slope IOUT =14A
I
OUT =I
OV 2
4A/µs
A/µs
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIL Input Low Level
Voltage 0.8 V
VIH Input High Level
Voltage 2(*)V
V
I(hyst.) Input Hysteresis
Voltage 0.5 V
IIN Input Current VIN = 5 V 250 500 µA
VICL Input Clamp Voltage IIN =10mA
I
IN =-10mA 6
-0.7 V
V
PROTECTIONS AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSTAT (•) Status Voltage Output
Low ISTAT =1.6mA 0.4 V
V
USD Under Voltage Shut
Down 6.5 V
VN20NSP
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ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSCL (•) Status Clamp Voltage ISTAT =10mA
I
STAT =-10mA 6
-0.7 V
V
tSC Switch-off Time in
Short Circuit Condition
at Start-Up
RLOAD <10mΩT
c=25o
C25ms
I
OV Over Current RLOAD <10mΩ-40 ≤Tc≤125 oC 140 A
IAV Average Current in
Short Circuit RLOAD <10mΩT
c=85o
C2.5A
I
OL Open Load Current
Level 5 700 mA
TTSD Thermal Shut-down
Temperature 140 oC
TRReset Temperature 125 oC
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
(•) Status determination > 100 µs after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
–If the input is pulled to power GND, a negative
voltage of -VFis seen by the device. (VIL,V
IH
thresholds and VSTAT are increased by VFwith
respect to power GND).
–The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,V
IL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN20NSP
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TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
HL
HH
H
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
VN20NSP
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Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
VN20NSP
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RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage
RDS(on) vs Output Current Input voltages vs Junction Temperature
Output Current Derating Open Load vs Junction Temperature
VN20NSP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.45 3.5 3.55 0.135 0.137 0.140
B 1.28 1.30 0.050 0.051
C 0.15 0.006
D 9.40 9.50 9.60 0.370 0.374 0.378
E 4.98 5.08 5.48 0.196 0.200 0.216
E1 0.40 0.45 0.60 0.016 0.018 0.024
E2 1.17 1.27 1.37 0.046 0.050 0.054
F 9.30 9.40 9.50 0.366 0.370 0.374
F1 7.95 8.00 8.15 0.313 0.315 0.321
G 7.40 7.50 7.60 0.291 0.295 0.299
H 6.80 6.90 7.00 0.267 0.417 0.421
I 0.10 0.004
K 13.80 14.10 14.40 0.543 0.555 0.567
L 0.40 0.50 0.016 0.020
M 1.60 1.67 1.80 0.063 0.066 0.071
N 0.60 0.08 1.00 0.024 0.031 0.039
0.08 mm.
0.003 in
A
1
G
E2
=E=
E1
D
B
M
K
L
HI
N
C
110
56
=F=
=F1 =
Power SO-10 MECHANICAL DATA
VN20NSP
8/9
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norforany infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponents inlife supportdevices or systems withoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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VN20NSP
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