CLA 30 E 1200 PC V RRM = I T(AV)M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 PC 1 3 Backside: anode Features / Advantages: Applications: Package: Thyristor for line frequency Planar passivated chip Long-term stability Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Housing: TO-263 (D2Pak) rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage drop V 10 A VR/D = 1200 V TVJ = 125 C 2 mA TVJ = 25C 1.30 V 1.59 V 1.27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A RMS forward current 180 sine for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation TVJ = 125 C 1.65 V T VJ = 150 C 30 A 47 A TVJ = 150 C 0.86 V 13.2 m 0.65 K/W 150 C TC = 25C 190 W T C = 150 C 10 W -40 t P = 30 s t P = 300 s PGAV average gate power dissipation I TSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved V 1200 I T(RMS) slope resistance 1300 TVJ = 25C TC = 115 C threshold voltage Unit max. TVJ = 25C average forward current rT typ. VR/D = 1200 V I T(AV)M VT0 min. TVJ = 25C 5 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45 C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45 C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 13 pF 20110209c CLA 30 E 1200 PC Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 150 C min. typ. max. Unit 40 A 150 VD = VDRM non-repetitive, I T = 30 A 500 A/s VD = VDRM TVJ = 150 C 500 V/s TVJ = 25 C 1.3 V TVJ = -40 C 1.6 V TVJ = 25 C 30 mA TVJ = -40 C 50 mA TVJ = 150 C 0.2 V 1 mA TVJ = 25 C 90 mA TVJ = 25 C 60 mA TVJ = 25 C 2 s repetitive, IT = A/s f = 50 Hz; tP = 200 s I (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage = 0.3 A; di /dt = 0.3 A/s R GK = ; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = VDRM t p = 10 s I = 0.3 A; di /dt = IH holding current VD = 6 V R GK = t gd gate controlled delay time VD = 1/2 VDRM I tq turn-off time = 0.3 A; di /dt = 0.3 A/s 0.3 A/s VR = 100 V; I T = 30 A TVJ = 150 C 150 s VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110209c CLA 30 E 1200 PC Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. Unit 35 0.25 -55 Weight FC max. K/W 150 2 20 mounting force with clip A C g 60 N Part number Product Marking Part No. Logo Date Code Assembly Line C L A 30 E 1200 PC XXXXXXXXX = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200 V) Current Rating [A] Single Part Reverse Voltage [V] TO-263AB (D2Pak) (2) IXYS yyww z 000000 Assembly Code Ordering Standard Part Name CLA 30 E 1200 PC Similar Part CLA30E1200PB CLA30E1200HB CS22-12io1M CS22-08io1M CMA30E1600PN CMA30E1600PB IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product CLA30E1200PC Package TO-220AB (3) TO-247AD (3) TO-220ABFP (3) TO-220ABFP (3) TO-220ABFP (3) TO-220AB (3) Delivering Mode Tape & Reel Base Qty Code Key 800 508235 Voltage class 1200 1200 1200 800 1600 1600 Data according to IEC 60747and per diode unless otherwise specified 20110209c CLA 30 E 1200 PC Outlines TO-263 (D2Pak) W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) 3x b 3.81 (0.150) 9.02 (0.355) E1 1.78 (0.07) 2.54 (0.100) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110209c CLA 30 E 1200 PC 1000 400 60 VR = 0 V 50 300 40 TVJ = 45C ITSM IT [A] 2 It TVJ = 45C 200 30 [A] TVJ = 150C 20 [A2s] 125C TVJ = 125C 100 TVJ = 125C 10 50 Hz, 80% VRRM TVJ = 25C 0 0.5 1.0 1.5 0 0.001 2.0 100 0.01 VT [V] 0.1 1 1 2 Fig. 1 Forward characteristics 4 5 6 7 8 910 2 Fig. 3 I t versus time (1-10 s) Fig. 2 Surge overload current ITSM: crest value, t: duration 102 4 3 t [ms] t [s] 40 IGD: TVJ = 125C 35 3 B VG IGD: TVJ = 25C 2 [V] 1 IGD: TVJ = 0C B C 30 IGD: TVJ = -40C B 180 sine 101 25 tgd ITAVM [s] [A] 20 15 lim. 100 10 IGD: TVJ = 25C typ. 5 A 10-1 10-2 0 0 25 50 75 IG [mA] 0 10-1 100 101 IG [A] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 0 20 40 60 80 100 120 140 160 Tcase [C] Fig. 6 Max. forward current at case temperature 1 ZthJC 0.1 Constants for ZthJC calculation: [K/W] 0.01 0.001 i Rthi (K/W) 1 0.024 2 0.069 3 0.148 4 0.053 5 0.356 0.01 0.1 1 ti (s) 0.0007 0.0018 0.018 0.12 0.76 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110209c