CLA 30 E 1200 PC
V = V
A²s
A²s
A²s
A²s
High Efficiency Thyristor
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
R/D
V
IA
V
T
1.30
R0.65 K/W
R/D
2 1
3
min.
30
Applications:
V
RSM/DSM
V1300
10T = 25°C
VJ
T = °C
VJ
mA2
Package:
Part number
V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
115
P
tot
190 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=
1200
47
30
CLA 30 E 1200 PC
V
A
1200
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
virt ua l j un ctio n temp e r ature
total power dissipation
Conditions Unit
1.59
T = 25°C
VJ
125
V
T0
V0.86T = °C
VJ
150
r
T
13.2 mΩ
V1.27T = °C
VJ
I = A
T
V
30
1.65
I = A
T
60
I = A
T
60
threshold voltage
slope resistance for power loss calculation only
Backside: anode
=30
A
● Housing:
Single Thyristor
TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
µA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
125
V
RRM/DRM
V1200
max. re pe titiv e re vers e/forward blockin g volt a ge T = 25°C
VJ
IA47
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
13
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
I
300
325
325
315
A
A
A
A
255
275
450
440
1200
300 µs
RMS forward current
T
(
RMS
)
T(RMS)
T(AV)M
180° sine
T
(
AV
)
M
average forward current
IXYS reserves the right to change limits, conditions and dimensions. 20110209c
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CLA 30 E 1200 PC
(di/dt)
cr
A/µ
s
150
repetitive, I =
T
VJ
= 150°C
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T = 150 °C
critical rate of rise of voltage
A/µ
s
500
V/µ
s
f = 50 Hz; t = 200 µs
IA;
V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
40 A
T
P
= 0.3 di /dt A/µs=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
500
1.3
V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
30 m
A
T= °C-40
VJ
1.6
V
50 m
A
V
GD
gate non-trigger voltage T= °C
VJ
0.2
V
I
GD
gate non-trigger current 1m
A
V = ⅔ V
D DRM
150
latching current T= °C
VJ
90 m
A
I
L
25tµs
p
=10
IA;= 0.3 di /dt A/µs=0.3
holding current T= °C
VJ
60 m
A
I
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;= 0.3 di /dt A/µs=0.3
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs20
V =
R
100 V; I A
T
=30
V = ⅔ V
D DRM
tµs
p
= 200
non-repetitive, I = 30 A
T
;
150
IXYS reserves the right to change limits, conditions and dimensions. 20110209c
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CLA 30 E 1200 PC
I
RMS
A
per terminal 35
R
thCH
K/W0.25
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N60
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
CLA 30 E 1200 PC 508235Tape & Reel 800
Product Markin
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yywwz
000000
Assembly Line
C
L
A
30
E
1200
PC
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200 V)
Single Part
TO-263AB (D2Pak) (2)
=
=
=
CLA30E1200PB
CLA30E1200HB
CS22-12io1M
CS22-08io1M
TO-220AB (3)
TO-247AD (3)
TO-220ABFP (3)
TO-220ABFP (3)
Similar Part Package
Marking on Pr oduct
CLA30E1200PC
1200
1200
1200
800
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
CMA30E1600PN
CMA30E1600PB
TO-220ABFP (3)
TO-220AB (3)
1600
1600
Part number
IXYS reserves the right to change limits, conditions and dimensions. 20110209c
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CLA 30 E 1200 PC
c2
A
A1
c
L
E
W
2x e
L1
D
321
3x b2
E1
3x b
H
D1
Supplier
Option
L2
4
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
10.92
(0.430)
9.02
(0.355)
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20110209c
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CLA 30 E 1200 PC
0 20 40 60 80 100 120 140 16
0
0
5
10
15
20
25
30
35
40
0255075
0
1
2
3
4
10-2 10-1 100101
10-1
100
101
102
0.001 0.01 0.1 1
0
100
200
300
400
0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10
0.01
0.1
1
IT
[A]
t [s]VT[V]
23456789011
100
1000
I2t
[A2s]
t [ms]
ITSM
[A]
TVJ = 25°C
TVJ =125°C
TVJ = 45°C
50 Hz, 80% VRRM
TVJ = 125°C
TVJ = 45°C
VR =0 V
VG
[V]
IG[mA]
ITAVM
[A]
Tcase [°C]
ZthJC
[K/W]
t[s]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
TVJ =150°C
125°C
IGD:T
VJ =125°C
IGD: TVJ = 25°C
IGD:T
VJ =25°C
IGD:T
VJ =0°C
IGD:T
VJ = -40°C
A
B
B
B
C
tgd
[µs]
IG [A]
lim.
typ.
Fig. 5 Gate controlled delay time tgd
180° sine
Constants for ZthJC calculation:
iR
thi (K/W) ti(s)
1 0.024 0.0007
2 0.069 0.0018
3 0.148 0.018
4 0.053 0.12
5 0.356 0.76
IXYS reserves the right to change limits, conditions and dimensions. 20110209c
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
