SCH2408 Ordering number : ENA1198 N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features * * 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 30 10 V V ID 0.35 A Drain Current (Pulse) IDP PW10s, duty cycle1% 1.4 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 1unit 0.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol Conditions V(BR)DSS IDSS ID=1mA, VGS=0V Ratings min typ 30 V VDS=30V, VGS=0V IGSS VGS(off) VGS=8V, VDS=0V VDS=10V, ID=100A 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=200mA 360 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage ID=200mA, VGS=4V Unit max 1 A 10 A 1.3 600 V mS 0.75 1.0 ID=100mA, VGS=2.5V 0.9 1.3 ID=10mA, VGS=1.5V 1.8 3.6 Input Capacitance Ciss VDS=10V, f=1MHz 28 pF Output Capacitance Coss pF Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 6.0 Reverse Transfer Capacitance 3.1 pF Marking : LH (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: SCH2408/D SCH2408 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ See specified Test Circuit. 17.5 ns See specified Test Circuit. 34.2 ns td(off) tf See specified Test Circuit. 104 ns See specified Test Circuit. 55.5 ns 0.87 nC 0.39 nC 0.86 Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA Diode Forward Voltage VSD IS=350mA, VGS=0V Package Dimensions 0.14 Electrical Connection unit : mm (typ) 7028-006 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 1.6 0.2 1.5 1 2 3 0.5 0.56 0.05 1.6 0.05 0.2 0.25 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 Switching Time Test Circuit VDD=15V VIN 4V 0V ID=200mA RL=75 VOUT VIN D PW=10s D.C.1% G P.G Rg SCH2408 50 Unit td(on) tr Total Gate Charge 6 5 4 max S Rg=1.2k Rev.0 I Page 2 of 4 I www.onsemi.com nC 1.2 V SCH2408 ID -- VDS VDS=10V V 2.5 2.0 180 VGS=1.5V 100 80 60 --25C 100 120 Ta=75 C 6.0V 150 140 25 C Drain Current, ID -- mA 160 250 200 ID -- VGS 200 8.0V Drain Current, ID -- mA 300 V 5.0V 4.0 V 350 40 50 20 0 0 0 0.2 0.4 0.6 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 4.0 1.0 0.5 IT11709 IT11710 RDS(on) -- Ta 3.0 3.0 ID=200mA 2.5 100mA 1.5 1.0 0.5 0 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 5 2 Ta 75 C 100 7 25 5 C 3 20 40 60 80 100 120 140 160 IT11712 IS -- VSD VGS=0V 3 2 100 7 5 3 2 10 7 5 2 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT11713 Drain Current, ID -- mA 0 2 5 tr 3 td(on) 2 0.8 1.0 1.2 1.4 IT11714 f=1MHz 5 Ciss, Coss, Crss -- pF tf 0.6 7 td (off) 100 0.4 Ciss, Coss, Crss -- VDS 100 VDS=15V VGS=4V 7 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Switching Time, SW Time -- ns 0 3 2 10 1.0 --20 1000 7 5 Source Current, IS -- mA Forward Transfer Admittance, yfs -- mS 7 C -25 =- --40 Ambient Temperature, Ta -- C 1000 3 0.5 IT11711 VDS=10V 2 1.0 0 --60 8 yfs -- ID 3 00mA I =1 2.5V, D = VGS A =200m 4.0V, I D V GS= 25C 1 1.5 C 0 A m I =10 1.5V, D V GS= 2.0 Ta=7 5 10mA 2.0 2.5 --25 C 3.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=25C Ciss 3 2 10 7 Coss 5 Crss 3 2 10 7 10 1.0 2 3 5 7 100 2 Drain Current, ID -- mA 3 5 7 1000 IT11715 0 Rev.0 I Page 3 of 4 I www.onsemi.com 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT11716 SCH2408 VGS -- Qg 3 2 VDS=10V ID=350mA 3.5 1.0 7 5 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 2.5 2.0 1.5 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Total Gate Charge, Qg -- nC 1.0 10 0m op era s tio Operation in this area is limited by RDS(on). 3 2 n( Ta = 25 C ) Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 0.001 0.1 2 IT11717 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W 0.9 DC 0.1 7 5 0.01 7 5 PW10s 10 1m 0s s 10 ms ID=0.35A 3 2 3 2 0.5 ASO IDP=1.4A 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT13629 When mounted on ceramic substrate (900mm20.8mm) 1unit 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT13628 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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