BR93L56FJ-W - ROHM Co., Ltd.

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High Reliability Serial EEPROMs

High Reliability Series

EEPROMs Microwire BUS

BR93L□□-W Series, BR93A□□-WM Series, BR93H□□-WC Series

ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a

failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold

wires are used for internal connections, pushing the boundaries of reliability to the limit.

BR93L□□-W Series are assort 1Kbit～16Kbit. BR93A□□-WM Series are possible to operate at 105℃ and are assorted

with 1K～16Kbit. BR93H□□-WC Series are possible to operate at 125℃, are assorted with 2K～16Kbit.

Contents

BR93L□□-W Series

BR93L46-W, BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W

BR93A□□-WM Series

BR93A46-WM, BR93A56-WM, BR93A66-WM, BR93A76-WM, BR93A86-WM

・・・・P2

BR93H□□-WC Series

BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC

・・・P22

No.11001EGT03

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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Serial EEPROM Series

High Reliability Series

EEPROMs Microwire BUS

BR93L□□-W Series, 93A□□-WM Series

●Description

BR93L□□-W Series, BR93A□□-WM Series are serial EEPROM of serial 3-line interface method

●Features

1) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)

2) Actions available at high speed 2MHz clock(2.5~5.5V)

3) Speed write available (write time 5ms max.）

4) Same package and pin layout from 1Kbit to 16Kbit

5) 1.8~5.5V (BR93L□□-W Series), 2.5～5.5V(BR93A□□-WM Series) single power source action

6) Address auto increment function at read action

7) Write mistake prevention function

Write prohibition at power on

Write prohibition by command code

Write mistake prevention function at low voltage

8) Program cycle auto delete and auto end function

9) Program condition display by READY / BUSY

10) Low current consumption

At write action (at 5V) : 1.2mA (Typ.)

At read action (at 5V) : 0.3mA (Typ.)

At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)

11) TTL compatible( input / output s)

12) Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J*1

13) Data retention for 40 years

14) Endurance up to 1,000,000 times

15) Data at shipment all addresses FFFFh

*1 Only SOP8, SOP-J8, TSSOP-B8, MSOP8 for BR93A□□-WM

●BR93L, BR93A Series

Package type SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J

Capacity Bit format Type Power source

voltage F RF FJ RFJ FV RFV FVT RFVT RFVM RFVJ

1Kbit 64×16 BR93L46-W 1.8～5.5V ●●●●●●● ● ● ●

2Kbit 128×16 BR93L56-W 1.8～5.5V ●●●●●●● ● ● ●

4Kbit 256×16 BR93L66-W 1.8～5.5V ●●●●●●● ● ● ●

8Kbit 512×16 BR93L76-W 1.8～5.5V ● ● ● ● ● ● ● ●

16Kbit 1K×16 BR93L86-W 1.8～5.5V ● ● ● ● ● ● ● ●

1Kbit 64×16 BR93A46-WM 2.5～5.5V ● ● ● ● ● ●

2Kbit 128×16 BR93A56-WM 2.5～5.5V ● ● ● ● ● ●

4Kbit 256×16 BR93A66-WM 2.5～5.5V ● ● ● ● ● ●

8Kbit 512×16 BR93A76-WM 2.5～5.5V ● ● ● ● ● ●

16Kbit 1K×16 BR93A86-WM 2.5～5.5V ● ● ● ● ● ●

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Absolute Maximum Ratings(Ta=25℃,BR93L□□-W)

Parameter Symbol Limits Unit

Impressed voltage VCC -0.3～+6.5 V

Permissible dissipation Pd

450 (SOP8) *1

mW

450 (SOP-J8) *2

300 (SSOP-B8) *3

330 (TSSOP-B8) *4

310 (MSOP8) *5

310 (TSSOP-B8J) *6

Storage temperature range Tstg -65～+125 ℃

Action temperature range Topr -40～+85 ℃

Terminal voltage ‐ -0.3～VCC+0.3 V

* When using at Ta=25℃ or higher, 4.5mW(*1,*2), 3.0mW(*3) 3.3mW(*4),

3.1mW(*5, 6), to be reduced per 1℃.

●Absolute Maximum Ratings (Ta=25℃,BR93A□□-WM)

Parameter Symbol Limits Unit

Impressed voltage VCC -0.3～+6.5 V

Permissible

dissipation Pd

450 (SOP8) *1

mW

450 (SOP-J8) *2

330 (TSSOP-B8) *3

310 (MSOP8) *4

Storage temperature range Tstg -65～+125 ℃

Action temperature range Topr -40～+105 ℃

Terminal voltage ‐ -0.3～VCC+0.3 V

* When using at Ta=25℃ or higher, 4.5mW(*1,*2), 3.3mW(*3), 3.1 mW(*4) to be reduced per 1℃.

●Memory cell characteristics (VCC=1.8～5.5V,BR93L□□-W)

Parameter Limit Unit Condition

Min. Typ. Max.

Endurance *1 1,000,000 - - Times Ta=25℃

Data retention *1 40 - - Years Ta=25℃

○Shipment data all address FFFFh

*1 Not 100% TESTED

●Memory cell characteristics (VCC=2.5～5.5V,BR93A□□-WM)

Parameter Limit Unit Condition

Min. Typ. Max.

Endurance *1 1,000,000 Times Ta≦25℃

100,000 Ta≦105℃

Data retention *1

40 - -

Years Ta≦25℃

10 - - Ta≦105℃

○Shipment data all address FFFFh

*1 Not 100% TESTED

●Recommended action conditions (BR93L□□-W)

Parameter Symbol Limits Unit

Power source voltage VCC 1.8～5.5

V

Input voltage VIN 0～VCC

●Recommended action conditions (BR93A□□-WM)

Parameter Symbol Limits Unit

Power source voltage VCC 2.5～5.5

V

Input voltage VIN 0～VCC

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Electrical characteristics

(Unless otherwise specified, VCC=2.5～5.5V, Ta=-40～+85℃, BR93L□□-W, Ta=-40～+105℃, BR93A□□-WM)

Parameter Symbol Limits Unit Condition

Min. Typ. Max.

“L” input voltage 1 VIL1 -0.3 - +0.8 V 4.0V≦VCC≦5.5V

“L” input voltage 2 VIL2 -0.3 - 0.2 x VCC V VCC≦4.0V

“H” input voltage 1 VIH1 2.0 - VCC+0.3 V 4.0V≦VCC≦5.5V

“H” input voltage 2 VIH2 0.7 x VCC - VCC+0.3 V VCC≦4.0V

“L” output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V

“L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA

“H” output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V

“H” output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA

Input leak current ILI -1 - +1 µA VIN=0V～VCC

Output leak current ILO -1 - +1 µA VOUT=0V～VCC, CS=0V

Current consumption

at action

ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE)

ICC2 - - 1.5 mA fSK=2MHz (READ)

ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL)

Standby current ISB - - 2 µA CS=0V, DO=OPEN

◎Radiation resistance design is not made.

(Unless otherwise specified, VCC=1.8～2.5V, Ta=-40～+85℃, BR93L□□-W)

Parameter Symbol Limits Unit Condition

Min. Typ. Max.

“L” input voltage VIL -0.3 - 0.2 x VCC V

“H” input voltage VIH 0.7 x VCC - VCC+0.3 V

“L” output voltage VOL 0 - 0.2 V IOL=100μA

“H” output voltage VOH VCC-0.2 - VCC V IOH=-100μA

Input leak current ILI -1 - +1 μA VIN=0V～VCC

Output leak current ILO -1 - +1 μA VOUT=0V～VCC, CS=0V

Current consumption

at action

ICC1 - - 1.5 mA fSK=500kHz, tE/W=5ms (WRITE)

ICC2 - - 0.5 mA fSK=500kHz (READ)

ICC3 - - 2 mA fSK=500kHz, tE/W=5ms (WRAL, ERAL)

Standby current ISB - - 2 μA CS=0V, DO=OPEN

◎Radiation resistance design is not made.

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Action timing characteristics

(BR93L□□-W, Ta=-40～+85℃, VCC=2.5～5.5V, BR93A□□-WM, Ta=-40～+105℃, VCC=2.5～5.5V)

Parameter Symbol 2.5V≦VCC≦5.5V Unit

Min. Typ. Max.

SK frequency fSK - - 2 MHz

SK “H” time tSKH 230 - - ns

SK “L” time tSKL 230 - - ns

CS “L” time tCS 200 - - ns

CS setup time tCSS 50 - - ns

DI setup time tDIS 100 - - ns

CS hold time tCSH 0 - - ns

DI hold time tDIH 100 - - ns

Data “1” output delay time tPD1 - - 200 ns

Data “0” output delay time tPD0 - - 200 ns

Time from CS to output establishment tSV - - 150 ns

Time from CS to High-Z tDF - - 150 ns

Write cycle time tE/W - - 5 ms

(BR93L□□-W, Ta=-40～+85℃, VCC=1.8～2.5V)

Parameter Symbol

1.8V≦VCC≦2.5V Unit

Min. Typ. Max.

SK frequency fSK - - 500 kHz

SK “H” time tSKH 0.8 - - us

SK “L” time tSKL 0.8 - - us

CS “L” time tCS 1 - - us

CS setup time tCSS 200 - - ns

DI setup time tDIS 100 - - ns

CS hold time tCSH 0 - - ns

DI hold time tDIH 100 - - ns

Data “1” output delay time tPD1 - - 0.7 us

Data “0” output delay time tPD0 - - 0.7 us

Time from CS to output establishment tSV - - 0.7 us

Time from CS to High-Z tDF - - 200 ns

Write cycle time tE/W - - 5 ms

●Sync data input / output timing

○Data is taken by DI sync with the rise of SK.

○At read action, data is output from DO in sync with the rise of SK.

○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area

DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.

○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.

Fig.1 Sync data input / output timing

C

S

SK

DO

(

RE AD

)

DI

DO

(

WRITE

)

tCSS tSKH

t

SKL

tCS H

tDIS tDIH

tPD1

tPD0

tDF

S TAT U S VA L I D

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●BR93L□□-W Characteristic data (The following characteristic data are Typ. values.)

Fig.2 H output voltage VIH(CS,SK,DI) Fig.3 H input voltage VIL(CS,SK,DI) Fig.4 L output voltage VOL-IOL(Vcc=1.8V)

Fig.5 L output voltage VOL-IOL(Vcc=2.5V) Fig.6 L output voltage VOL-IOL(Vcc=4.0V) Fig.7 H output voltage VOH-IOH(Vcc=1.8V)

Fig.8 H output voltage VOH-IOH(Vcc=2.5V) Fig.9 H output voltage VOH-IOH(Vcc=4.0V) Fig.10 Input leak current ILI(CS,SK,DI)

Fig.11 Output leak current ILO (DO) Fig.12 Current consumption at WRITE action

ICC1 (WRITE, fSK=2MHz)

Fig.13 Consumption current at READ action

ICC2 (READ, fSK=2MHz)

Fig.14 Consumption current at WRAL action

ICC3 (WRAL, fSK=2MHz)

Fig.15 Current consumption at WRITE action

ICC1 (WRITE, fSK=500kHz)

Fig.16 Consumption current at READ action

ICC2 (READ, fSK=500kHz)

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●BR93L□□-W Characteristic data (The following characteristic data are Typ. values.)

Fig.17 Consumption current at WRAL action

ICC3 (WRAL, fSK=500kHz)

Fig.18 Consumption current at standby action ISB Fig.19 SK frequency fSK

Fig.20 SK high time tSKH Fig.21 SK low time tSKL Fig.22 CS low time tCS

Fig.23 CS hold time tCSH Fig.24 CS setup time tCSS Fig.25 DI hold time tDIH

Fig.26 DI setup time tDIS Fig.27 Data “0” output delay time tPD0 Fig.28 Output data “1” delay time tPD1

Fig.29 Time from CS to output establishment tSV Fig.30 Time from CS to High-Z tDF Fig.31 Write cycle time tE/W

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●BR93A□□-WM Characteristic data (The following characteristic data are Typ. values.)

Fig.35 L output voltage VOL-IOL(Vcc=4.0V) Fig.36 H output voltage VOH-IOH(Vcc=2.5V) Fig.37 H output voltage VOH-IOH(Vcc=4.0V)

Fig.32 H output voltage VIH(CS,SK,DI) Fig.33 H input voltage VIL(CS,SK,DI) Fig.34 L output voltage VOL-IOL(Vcc=2.5V)

Fig.38 Input leak current ILI(CS,SK,DI) Fig.39 Output leak current ILO(DO) Fig.40 Current consumption at WRITE action

Icc1(WRITE, fSK=2MHz)

Fig.41 Consumption current at READ action

Icc2(READ, fSK=2MHz)

Fig.42 Consumption current at WRAL action

Icc3(WRAL, fSK=2MHz)

Fig.43 Consumption current at standby action ISB

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●BR93A□□-WM Characteristic data (The following characteristic data are Typ. values.)

Fig.44 SK frequency fSK Fig.46 SK low time tSKL Fig.45 SK high time tSKH

Fig.47 CS low time tCS Fig.49 CS setup time tCSS Fig.48 CS hold time tCSH

Fig.50 DI hold time tDIH Fig.52 Data “0” output delay time tPD0 Fig.51 DI setup time tDIS

Fig.53 Output data “1” delay time tPD1 Fig.55 Time from CS to High-Z tDF Fig.54 Time from CS to output establishment tSV

Fig.56 Write cycle time tE/W

Fig.44 SK frequency fSK Fig.46 SK low time tSKL Fig.45 SK high time tSKH

Fig.47 CS low time tCS Fig.49 CS setup time tCSS Fig.48 CS hold time tCSH

Fig.50 DI hold time tDIH Fig.52 Data “0” output delay time tPD0 Fig.51 DI setup time tDIS

Fig.53 Output data “1” delay time tPD1 Fig.55 Time from CS to High-Z tDF Fig.54 Time from CS to output establishment tSV

Fig.56 Write cycle time tE/W

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Block diagram

●Pin assignment and function

Fig.57 Block diagram

Fig.58 Pin assignment diagram

BR93LXXF-W/AXXF-WM:SOP8

BR93LXXFJ-W/AXXFJ-WM:SOP-J8

BR93LXXFV-W:SSOP-B8*

BR93LXXFVT-W:TSSOP-B8*

NC GND DO DI

NC Vcc CS SK

BR93LXXRF-W/AXXRF-WM:SOP8

BR93LXXRFJ-W/AXXRFJ-WM:SOP-J8

BR93LXXRFV-W:SSOP-B8

BR93LXXRFVT-W/AXXRFVT-WM:TSSOP-B8

BR93LXXRFVM-W/AXXRFVM-WM:MSOP8

BR93LXXRFVJ-W:TSSOP-B8J

Vcc NC NC GND

CS SK DI DO

Command decode

Control

Clock generation

Power source voltage detection

Write

prohibition

High voltage occurrence

Command

register

Address

buffer

SK

DI

Dummy bit

DO

Data

register

R/W

amplifier

6bi

t

7bit

8bit

9bit

10bit

6bi

t

7bit

8bit

9bit

10bit

16bit 16bit

1,024 bit

2,048 bit

4,096 bit

8,192 bit

16,384 bit

EEPROM

CS

Address

decoder

Pin name I / O Function

VCC - Power source

GND - All input / output reference voltage, 0V

CS Input Chip select input

SK Input Serial clock input

DI Input Start bit, ope code, address, and serial data input

DO Output Serial data output, READY / BUSY internal condition display output

NC - Non connected terminal, Vcc, GND or OPEN

*BR93L46/56/66-W

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Description of operations

Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and

CS (chip select) for device selection.

When to connect one EEPROM to a microcontroller, connect it as shown in Fig.59(a) or Fig.59(b). When to use the input and

output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Fig.59(b) (Refer to pages

17/35.), and connection by 3 lines is available.

In the case of plural connections, refer to Fig. 59 (c).

Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After

input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners.

“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the

microcontroller, input “0” before the start bit input, to control the bit width.

●Command mode

Command Start

bit

Ope

code

Address

Data

BR93L46-W

BR93A46-WM

BR93L56/66-W

BR93A56/66-WM

BR93L76/86-W

BR93A76/86-WM

Read (READ)

*

1 1 10 A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(READ DATA)

Write enable (WEN) 1 00 1 1 * * * * 1 1 * * * * * * 1 1 * * * * * * * *

Write (WRITE)

*

2 1 01 A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA)

Write all (WRAL)

*

2 1 00 0 1 * * * * 0 1 * * * * * * 0 1 * * * * * * * * D15~D0(WRITE DATA)

Write disable (WDS) 1 00 0 0 * * * * 0 0 * * * * * * 0 0 * * * * * * * *

Erase (ERASE) 1 11 A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0

Chip erase (ERAL) 1 00 1 0 * * * * 1 0 * * * * * * 1 0 * * * * * * * *

・ Input the address and the data in MSB first manners.

・ As for *, input either VIH or VIL.

*Start bit

Acceptance of all the commands of this IC starts at recognition of the start bit.

The start bit means the first “1” input after the rise of CS.

*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and

address data in significant order are sequentially output continuously. (Auto increment function)

*2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written.

Fig.59-(a) Connection by 4 lines

CS

SK

DO

DI

CS

SK

DO

CS

SK

DI

DO

Fig.59-(b) Connection by 3 lines

CS

SK

DI

DO

CS3

CS1

CS0

SK

DO

DI

CS

SK

DI

DO

Device 1

CS

SK

DI

DO

Device 2

CS

SK

DI

DO

Device 3

Fig.59-(c) Connection example of plural devices

Fig.59 Connection method with microcontroller

Micro-

controller

BR93LXX

/AXX

Micro-

controller

Micro-

controller

A7 of BR93L56-W/A56-WM becomes Don't Care.

A9 of BR93L76-W/A76-WM becomes Don't Care.

BR93LXX

/AXX

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

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●Timing chart

1) Read cycle (READ)

*1 Start bit

When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a

start bit, and the following operation is started. This is common to all the commands to described hereafter.

○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in

sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.

This IC has an address auto increment function valid only at read command. This is the function where after the above read

execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment,

keep CS at “H”.

2) Write cycle (WRITE)

○In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall

of CS of D0 taken SK clock.

When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”),

all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command.

3) Write all cycyle (WRAL)

○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word

but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.

CS

1

2

1

4

High-Z

1

Am

A1

A0

0

D15 D14 D1

D15 D14

*1

*2

D0

SK

DI

DO

0

～

n

n+1

CS

1

2

1

4

High-Z

0

A

m

A

1

A

0D15 D14 D1

～

D0

SK

DI

DO

1

～

n

STATUS

tCS

tSV

BUSY

～

tE/W

READY

CS

1 2

1

5

High-Z

0 0 0 D15 D14 D1

～

D0

SK

DI

DO

～

n

STATUS

tCS

tSV

BUSY

～

tE/W

READY

1

～

: n=27, m=7

: n=29, m=9

BR93L46-W/A46-WM : n=25, m=5

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

: n=27, m=7

: n=29, m=9

BR93L46-W/A46-WM : n=25, m=5

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

: n=27

: n=29

BR93L46-W/A46-WM : n=25

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

Fig. 60 Read cycle

Fig.61 Write cycle

Fig.62 Write all cycle

Technical Note

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4) Write enable (WEN) / disable (WDS) cycle

○ At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is

necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable

command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable

command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it.

○ When the write enable command is executed after power on, write enable status gets in. When the write disable command

is executed then, the IC gets in write disable status as same as at power on, and then the write command is canceled

thereafter in software manner. However, the read command is executable. In write enable status, even when the write

command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write disable

command after completion of write.

5) Erase cycle timing (ERASE)

○In this command, data of the designated address is made into “1”. The data of the designated address becomes “FFFFh”.

Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.

In ERASE, status can be detected in the same manner as in WRITE command.

6) Chip erase cycle timing (ERAL)

○In this command, data of all addresses is erased. Data of all addresses becomes ”FFFFh”.

Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.

In ERAL, status can be detected in the same manner as in WRITE command.

Fig.63 Write enable (WEN) / disable (WDS) cycle

CS

1

2

1 1 1

4

High-Z

～

SK

DI

DO

～

STATUS

tCS

tSV

BUSY

tE/W

READY

Am

～

A3

A2 A1

n

A0

～

Fig.64 Erase cycle timing

CS

1

2

1

4

High-Z

SK

DI

DO

～

STATUS

tCS

tSV

BUSY

～

tE/W

READY

1

n

～

0 0

0

～

Fig.65 Chip erase cycle timing

: n=11

: n=13

BR93L46-Ｗ/A46-WM : n=9

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

BR93L46-W/A46-WM : n=9, m=5

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

: n=11, m=7

: n=13, m=9

BR93L46-W/A46-WM : n=9

BR93L56-W/A56-WM

BR93L66-W/A66-WM

BR93L76-W/A76-WM

BR93L86-W/A86-WM

: n=11

: n=13

CS

1

2

1

5

High-Z

0 0

SK

DI

DO

n3 4 6

7

8

ENABLE=1 1

DISABLE=0 0

～

Technical Note

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●Application

1) Method to cancel each command

○READ

○WRITE, WRAL

(In the case of BR93L46-W/A46-WM)

＊1 Address is 8 bits in BR93L56-W/A56-WM, BR93L-66W/A66-WM

Address is 10 bits in BR93L76-W/A76-WM, BR93L86-W/A86-WM

Fig.66 READ cancel available timing

Note 1) If Vcc is made OFF in this area, designated address data is

not guaranteed, therefore write once again.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes unstable, therefore, it is

recommended to fail in SK=”L” area.

As for SK rise, recommend timing of tCSS/tCSH or higher.

Fig.67 WRITE, WRAL cancel available timing

(In the case of BR93L46-W/A46-WM)

Start bit Ope code Address Data

1bit 2bit 6bit 16bit

Cancel is available in all areas in read mode.

・Method to cancel：cancel by CS=“L”

*1

Start bit Ope code Address Data tE/W

a

*1

1bit 2bit 6bit 16bit

b

SK

・25 Rise of clock *2

D1

Enlarged figure

D0

DI

24 25

a：From start bit to 25 clock rise＊

2

Cancel by CS=“L”

b：25 clock rise and after＊2

Cancellation is not available by any means. If Vcc is made OFF in this area,

designated address data is not guaranteed, therefore write once again.

And when SK clock is input continuously, cancellation is not available.

*1 Address is 8 bits in BR93L56-W/A56-WM, BR93L66-W/A66-WM

Address is 10 bits in BR93L76-W/A76-WM BR93L86-W/A86-WM

*2 27 clocks in BR93L56-W/A56-WM, BR93L66-W/A66-WM

29 clocks in BR93L76-W/A76-WM BR93L86-W/A86-WM

(In the case of BR93L86-W/A86-WM)

a：From start bit to 29 clock rise

Cancel by CS=“L”

b：29 clock rise and after

Cancellation is not available by any means. If Vcc is made OFF in this area,

designated address data is not guaranteed, therefore write once again.

c：30 clock rise and after

Cancel by CS=“L”

However, when write is started in b area (CS is ended), cancellation is not

available by any means.

And when SK clock is output continuously is not available.

SK

DI

29 Rise of cloc

k

*2

28

D1 D0

29 30 31

b

Enlarged figure

c

a

Start bit Ope code Address Data tE/W

a

*1

1bit 2bit 10bit 16bit

c

b

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○ERASE, ERAL

2) At standby

○Standby current

When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase.

○Timing

As shown in Fig.69, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge.

At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. (Refer to Fig.70)

＊1 Address is 8 bits in BR93L56-W/A56-WM, BR93L66-W/A66-WM

Address is 10 bits in BR93L76-W/A76-WM

＊2 11 clocks in BR93L56-W/A56-WM, BR93L66-W/A66-WM

13 clocks in BR93L76-W/A76-WM

SK

DI

9 Rise of cloc

k

＊

2

8

A1 A0

Enlarged figure

9

Fig.68 ERASE, ERAL cancel available timing

(In the case of BR93L46-W/A46-WM)

Start bit Ope code Address 1/2

tE/W

*1

a b

1bit 2bit 6bit

a：From start bit to 9 clock rise＊2

Cancel by CS=“L”

b：9 clock rise and after＊2

Cancellation is not available by any means. If Vcc is made OFF in this area,

designated address data is not guaranteed, therefore write once again.

And when SK clock is input continuously, cancellation is not available.

(In the case of BR93L86-W/A86-WM)

SK

DI

13 Rise of cloc

k

*2

12

D1

13 14 15

b c

a

Enlarged figure

1bit 2bit 10bit

a c

b

Start bit Ope code Address tE/W

*1

a：From start bit to 13 clock rise

Cancel by CS=“L”

b：13 clock rise and after

Cancellation is not available by any means. If Vcc is made OFF in this area,

designated address data is not guaranteed, therefore write once again.

c：14 clock rise and after

Cancel by CS=“L”

However, when write is started in b area (CS is ended), cancellation is not

available by any means.

And when SK clock is output continuously is not available.

CS

SK

DI

Start bit input

CS=SK=DI=”H”

Wrong recognition as a start bit

CS

SK

DI

Start bit input

If CS is started when SK=”L” or DI=”L”, a start

bit is recognized correctly.

Fig.69 Wrong action timing Fig.70 Normal action timing

Note 1) If Vcc is made OFF in this area, designated address data is

not guaranteed, therefore write once again.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes unstable, therefore, it is

recommended to fail in SK=”L” area.

As for SK rise, recommend timing of tCSS/tCSH or higher.

Technical Note

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3) Equivalent circuit

4) I/O peripheral circuit

4-1) Pull down CS.

By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.

○Pull down resistance Rpd of CS pin

To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an

appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.

4-2) DO is available in both pull up and pull down.

Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write

command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to

pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN.

If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this

as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such

output, pull up DO pin for improvement.

Fig.76 READY output timing at DO=OPEN

Output circuit

DO

OEint.

Input citcuit

CS CSint.

RESET int.

Input circuit

DI

CS int.

Input circuit

SK

CS int.

Fig.71 Output circuit (DO)

Fig.73 Input circuit (DI)

Fig.72 Input circuit (CS)

Fig.74 Input circuit (SK)

Microcontroller

VOHM

“H” output IOHM Rpd

VIHE

“L” input

EEPROM

Fig.75 CS pull down resistance

VOHM

IOHM

Rpd ≧ ・・・①

2.4

2×10-3

∴ Rpd

≧ 1.2 [kΩ]

VOHM ≧ VIHE ・・・②

Rpd ≧

Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,

from the equation ①,

・VIHE

・VOHM

・IOHM

With the value of Rpd to satisfy the above equation, VOHM becomes

2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.

: EEPROM VIH specifications

: Microcontroller VOH specifications

: Microcontroller IOH specifications

CS

SK

DI

DO

D0

BUSY

READY

High-Z

Enlarged

CS

SK

DI

DO

BUSY

High-Z

Improvement by DO pull up

BUSY

READY

CS=SK=DI=”H”

When DO=OPEN

CS=SK=DI=”H”

When DO=pull up

DO

“H”

Technical Note

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○Pull up resistance Rpu and pull down resistance Rpd of DO pin

As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller

VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.

5) READY / BUSY status display (DO terminal)

(common to BR93L46-W/A46-WM,BR93L56-W/A56-WM, BR93L66-W/A66-WM, BR93L76-W/A76-WM, BR93L86-W/A86-WM)

This display outputs the internal status signal. When CS is started after tCS (Min.200ns)

from CS fall after write command input, “H” or “L” is output.

R/B display＝“L” (BUSY) = write under execution

After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.

And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.

R/B display = “H” (READY) = command wait status

Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted.

Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area

CS=“H”. (Especially, in the case of shared input port, attention is required.)

*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.

Therefore, status READY output is cancelled, and malfunction and mistake write may be made.

Microcontroller

VILM

“L” input

IOLE

VOLE

“L” output

EEPROM

Rpu

Microcontroller

VIHM

“H” input IOHE

VOHE

“H” output

EEPROM

Rpd

Fig.77 DO pull up resistance

CS

High-Z

SK

DI

DO

CLOCK

WRITE

INSTRUCTION

READY

BUSY

STATUS

Rpu ≧ ・・・③

5－0.4

2.1×10-3

∴ Rpu

≧ 2.2 [kΩ]

VOLE ≦ VILM ・・・④

Rpu ≧

Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,

from the equation ③,

Vcc－VOLE

IOLE

With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V

or below, and with VILM(=0.8V), the equation ④ is also satisfied.

Rpd ≧ ・・・⑤

5－0.2

0.1×10-3

∴ Rpd

≧ 48 [kΩ]

VOHE ≧ VIHM ・・・⑥

Rpd ≧

Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,

VIHM=Vcc×0.7V from the equation ⑤,

VOHE

IOHE

With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V

or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.

Fig.78 DO pull down resistance

（DO status）

Fig.79 R/B status output timing chart

tSV

: EEPROM VOL specifications

: EEPROM IOL specifications

: Microcontroller VIL specifications

・VOLE

・IOLE

・VILM

: EEPROM VOH specifications

: EEPROM IOH specifications

: Microcontroller VIH specifications

・VOHE

・IOHE

・VIHM

Technical Note

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6) When to directly connect DI and DO

This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,

meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line.

○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.

Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same

time in the following points.

(1) 1 clock cycle to take in A0 address data at read command

Dummy bit “0” is output to DO terminal.

→When address data A0 = “1” input, through current route occurs.

(2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.

When the next start bit input is recognized, “HIGH-Z” gets in.

→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,

READY output “H” is output from DO terminal, and through current route occurs.

Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.

Note) As for the case (2), attention must be paid to the following.

When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is

input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY

output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.

Microcontroller

DI/O PORT

DI

EEPROM

DO

R

Fig.80 DI, DO control line common connection

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

A1

High-Z

Collision of DI input and DO output

“H”

A0

0 D15 D14 D13

A1 A0 High-Z

Microcontroller output Microcontroller input

Fig.81 Collision timing at read data output at DI, DO direct connection

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

Write command

Microcontroller output

BUSY

BUSY READY

READY

Collision of DI input and DO output

～

High-Z

Write command

Microcontroller input Microcontroller output

Fig.82 Collision timing at DI, DO direct connection

CS

SK

DI

DO

READY

High-Z

Start bit

Because DI=”H”, set

SK=”L” at CS rise.

Fig.83 Start bit input timing at DI, DO direct connection

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○Selection of resistance value R

The resistance R becomes through current limit resistance at data collision. When through current flows, noises of

power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,

the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so

forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL

even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence

upon basic operations.

(1) Address data A0 = “1” input, dummy bit “0” output timing

(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)

・Make the through current to EEPROM 10mA or below.

・See to it that the level VIH of EEPROM should satisfy the following.

(2) DO status READY output timing

(When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI)

・Set the EEPROM input level VIL so as to satisfy the following.

Microcontroller

DI/O PORT DI

EEPROM

DO

R

“H” output

IOHM

VOHM

VOLE

“L” output

Fig.84 Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)

Conditions

VOHM ≦ VIHE

VOHM ≦ IOHM×R + VOLE

At this moment, if VOLE=0V,

VOHM ≦ IOHM×R

∴ R ≧ ・・・⑦

VOHM

IOHM

Microcontroller

DI/O PORT DI

EEPROM

DO

R

“L” output

IOHM

VOLM

VOHE “H” output

Conditions

VOLM ≧ VILE

VOLM ≧ VOHE – IOLM×R

As this moment, VOHE=Vcc

VOLM ≧ Vcc – IOLM×R

∴ ・・・⑧

Vcc – VOLM

IOLM

Fig.85 Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)

Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,

From the equation ⑦, From the equation⑧,

R ≧

VOHM

IOHM

5

0.4×10-3

∴ R ≧ 12.5 [kΩ] ・・・⑨

R ≧

Vcc – VOLM

IOLM

5 – 0.4

2.1×10-3

∴ R ≧ 2.2 [kΩ] ・・・⑩

Therefore, from the equations ⑨ and ⑩,

∴ R ≧ 12.5 [kΩ]

: EEPROM VIH specifications

: EEPROM VOL specifications

: Microcontroller VOH specifications

: Microcontroller IOH specifications

・VIHE

・VOLE

・VOHM

・IOHM

: EEPROM VIL specifications

: EEPROM VOH specifications

: Microcontroller VOL specifications

: Microcontroller IOL specifications

・VILE

・VOHE

・VOLM

・IOLM

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7) Notes on power ON/OFF

・At power ON/OFF, set CS “L”.

When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may

cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs

are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At

this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”.

○POR citcuit

This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write

disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is

“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the

follwing conditions.

1. Set CS=”L”

2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.

○LVCC circuit

LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.

At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite.

8) Noise countermeasures

○VCC noise (bypass capacitor)

When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is

recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC

as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.

○SK noise

When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock

bit displacement.To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about

0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time

(tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures.

Make the clock rise, fall time as small as possible.

tOFF

tR

Vbot

0

VCC

tRtOFF Vbot

10ms or below 10ms or higher 0.3V or below

100ms or below 10ms or higher 0.2V or below

VCC

GND

VCC

GND

VCC

CS

Bad example Good example

Fig.86 Timing at power ON/OFF

Fig.87 Rise waveform diagram

（Bad example）CS pin is pulled up to Vcc.

In this case, CS becomes “H” (active status), and EEPROM may have malfunction,

mistake write owing to noise and the likes.

Even when CS in

p

ut is Hi

g

h-Z, the status becomes like this case, which

p

lease note.

（Good example）It is “L” at power ON/OFF.

Set 10ms or higher to recharge at power OFF.

When power is turned on without observing this condition,

IC internal circuit may not be reset, which please note.

Recommended conditions of tR, tOFF, Vbot

Technical Note

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●Note ofn use

(1) Described numeric values and data are design representative values, and the values are not guaranteed.

(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further

sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in

consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.

(3) Absolute Maximum Ratings

If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC

may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear

exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that

conditions exceeding the absolute maximum ratings should not be impressed to IC.

(4) GND electric potential

Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that

of GND terminal in consideration of transition status.

(5) Heat design

In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.

(6) Terminal to terminal shortcircuit and wrong packaging

When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may

destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND

owing to foreign matter, IC may be destructed.

(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently

Technical Note

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Serial EEPROM Series

High Reliability Series

EEPROMs Microwire BUS

BR93H□□-WC Series

●Description

BR93H□□-WC Series is a serial EEPROM of serial 3-line interface method.

●Features

1) Withstands electrostatic voltage 8kV, (twice more than other series)（HBM method typ.,except BR93H66RFVM-WC）

2) Wide action range -40℃～+125℃（-40℃～+85℃, -40℃～+105℃ in other series）

3) Conforming to Microwire BUS

4) Address auto increment function at read action

5) Write mistake prevention function

Write prohibition at power on

Write prohibition by command code

Write mistake prevention circuit at low voltage

6) Program cycle auto delete and auto end function

7) Program condition display by READY / BUSY

8) Low current consumption

At write action (at 5V) : 0.6mA (Typ.)

At read action (at 5V) : 0.6mA (Typ.)

At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)

9) Built-in noise filter CS, SK, DI terminals

10) Compact package SOP8/SOP-J8/MSOP8

11) High reliability by ROHM original Double-Cell structure

12) High reliability ultrafine CMOS process

13) Easily connectable with serial port BR93H series

14) Data retention for 20 years (Ta≦125℃)

15) Endurance up to 1,000,000 times (Ta≦125℃)

16) Data at shipment all address FFFFh

●BR93H Series

Package type SOP8 SOP-J8 MSOP8

Capacity Bit format Type Power source

voltage RF RFJ RFVM

2Kbit 128×16 BR93H56-WC 2.7～5.5V ● ●

4Kbit 256×16 BR93H66-WC 2.7～5.5V ● ● ●

8Kbit 512×16 BR93H76-WC 2.7～5.5V ● ●

16Kbit 1K×16 BR93H86-WC 2.7～5.5V ● ●

Technical Note

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●Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Limits Unit

Impressed voltage VCC -0.3～+6.5 V

Permissible dissipation Pd

560 (SOP8) *1

mW

560 (SOP-J8) *2

380 (MSOP8) *3

Storage temperature range Tstg -65 ～+150 ℃

Action temperature range Topr -40～+125 ℃

Terminal voltage ‐ -0.3～VCC+0.3 V

*When using at Ta=25℃ or higher, 4.5mW(*1,*2), 3.1mW(*3), to be reduced per 1℃.

●Memory cell characteristics (VCC=2.7～5.5V)

Parameter Limit Limit Limit

Min. Typ. Max.

Endurance *1

1,000,000 - - Times Ta≦85℃

500,000 - - Times Ta≦105℃

300,000 - - Times Ta≦125℃

Data retention *1 40 - - Years Ta≦25℃

20 - - Years Ta≦125℃

*1 Not 100% TESTED

●Recommended action conditions

Parameter Symbol Limits

Unit

Power source voltage VCC 2.7～5.5 V

Input voltage VIN 0～VCC

●Electrical characteristics (Unless otherwise specified, Ta=-40～+125℃, VCC=2.7～5.5V)

Parameter Symbol Limits Unit Conditions

Min. Typ. Max.

“L” input voltage VIL -0.3 - 0.3xVCC V

“H” input voltage VIH 0.7xVCC - VCC+0.3 V

“L” output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V

“L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA

“H” output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V

“H” output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA

Input leak current ILI -10 - 10 μA VIN=0V～VCC

Output leak current ILO -10 - 10 μA VOUT=0V～VCC, CS=0V

Current consumption at

action

ICC1 - - 3.0 mA fSK=1.25MHz, tE/W=10ms (WRITE)

ICC2 - - 1.5 mA fSK=1.25MHz (READ)

ICC3 - - 4.5 mA fSK=1.25MHz, tE/W=10ms (WRAL)

Standby current ISB - 0.1 10 μA CS=0V, DO=OPEN

◎Radiation resistance design is not made.

●Action timing characteristics (Unless otherwise specified, Ta=-40～+125℃, VCC=2.7～5.5V)

Parameter Symbol Min. Typ. Max. Unit

SK frequency fSK - - 1.25 MHz

SK “H” time tSKH 250 - - ns

SK “L” time tSKL 250 - - ns

CS “L” time tCS 200 - - ns

CS setup time tCSS 200 - - ns

DI setup time tDIS 100 - - ns

CS hold time tCSH 0 - - ns

DI hold time tDIH 100 - - ns

Data “1” output delay time tPD1 - - 300 ns

Data “0” output delay time tPD0 - - 300 ns

Time from CS to output establishment tSV - - 200 ns

Time from CS to High-Z tDF - - 200 ns

Write cycle time tE/W - 7 10 ms

Write cycle time(BR93H66RFVM-WC) tE/W - - 5 ms

Technical Note

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tCSS

CS

SK

tDF

tSKH tSKL tCSH

STATUS VALID

DI

DO (READ)

DO (WRITE)

tDIH

tDIS

tPD0 tPD1

●Sync data input / output timing

○Data is taken by DI sync with the rise of SK.

○At read action, data is output from DO in sync with the rise of SK.

○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area

DO where CS is “H”, and valid until the next command start bit is input. And, white CS is “L”, DO becomes High-Z.

○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.

Fig.1 Sync data input / output timing diagram

Technical Note

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●BR93H□□-WC Characteristic data

Technical Note

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●BR93H□□-WC Characteristic data

0

1

2

3

4

5

6

23456

SUPPLY VOLTAGE : Vcc(V)

WRITE CYCLE TIME

:

tE/W (m s)

SPEC

Ta=25℃

Ta=125℃

Ta=-40℃

Fig.26-1 Write cycle time tE/W

Technical Note

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●Block diagram

●Pin assignment and function

VCC NC TEST GND VCC TEST2 TEST1 GND

Fig. 27 Block diagram

Fig.28 Pin assignment diagram

BR93H56RF-WC:SOP8

BR93H56RFJ-WC:SOP-J8

CS SK DI DO

BR93H66RF-WC:SOP8

BR93H66RFJ-WC:SOP-J8

BR93H66RFVM-WC:MSOP8

BR93H76RF-WC:SOP8

BR93H76RFJ-WC:SOP-J8

BR93H86RF-WC:SOP8

BR93H86RFJ-WC:SOP-J8

CS SK DI DO

Pin name I / O Function

Vcc - Power source

GND - All input / output reference voltage, 0V

CS Input Chip select input

SK Input Serial clock input

DI Input Start bit, ope code, address, and serial data input

DO Output Serial data output, READY / BUSY internal condition display output

NC - Non connected terminal, Vcc, GND or OPEN

TEST1 - TEST terminal, GND or OPEN

TEST2 - TEST terminal, Vcc, GND or OPEN

TEST - TEST terminal, GND or OPEN

Command decode

Control

Clock generation

Power source voltage detection

Write

prohibition

High voltage occurrence

Command

register

Address

buffer

SK

DI

Dummy bit

DO

Data

register

R/W

amplifier

7bit

8bit

9bit

10bit

7bit

8bit

9bit

10bit

16bit 16bit

2,048 bit

4,096 bit

8,192 bit

16,384 bit

EEPROM

CS

Address

decoder

Technical Note

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●Description of operations

Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and

CS (chip select) for device selection.

When to connect one EEPROM to a microcontroller, connect it as shown in Fig.29-(a) or Fig.29-(b). When to use the input

and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Fig.29-(b) (Refer to pages

31/35.), and connection by 3 lines is available.

In the case of plural connections, refer to Fig. 29-(c).

Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After

input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners.

“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the

microcontroller, input “0” before the start bit input, to control the bit width.

●Command mode

Command Start

bit

Ope

code

Address Data

BR93H56/66-WC BR93H76/86-WC

Read (READ)

*

1 1 10 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(READ DATA)

Write enable (WEN) 1 00 1 1 * * * * * * 1 1 * * * * * * * *

Write (WRITE)

*

2 1 01 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA)

Write all (WRAL)

*

2,3 1 00 0 1 * * * * * B0 0 1 * * * * * B2,B1,B0 D15~D0(WRITE DATA)

Write disable (WDS) 1 00 0 0 * * * * * * 0 0 * * * * * * * *

・ Input the address and the data in MSB first manners.

・ As for *, input either VIH or VIL.

*Start bit

Acceptance of all the commands of this IC starts at recognition of the start bit.

The start bit means the first “1” input after the rise of CS.

*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and

address data in significant order are sequentially output continuously. (Auto increment function)

*2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written.

*3 For the write all command, data written in memory cell of the areas designated by B2, B1, and B0, are automatically

deleted, and input data is written in bulk.

●Write all area

・The write all command is written in bulk in 2Kbit unit.

The write area can be selected up to 3bit. Confirm the settings and write areas of the above B2, B1, and B0.

Fig.29 Connection method with microcontroller

Fig.29-(a) Connection by 4 lines

CS

SK

DO

DI

CS

SK

DO

CS

SK

DI

DO

Fig.29-(b) Connection by 3 lines

CS

SK

DI

DO

CS3

CS1

CS0

SK

DO

DI

CS

SK

DI

DO

Device 1

CS

SK

DI

DO

Device 2

CS

SK

DI

DO

Device 3

Fig.29-(c) Connection example of plural devices

Micro-

controller BR93HXX

Micro-

controller

BR93HXX

A7 and B0 of BR93H56-WC becomes Don't Care.

A9 and B2 of BR93H76-WC becomes Don't Care.

Micro-

controller

B2

B1

B0 Write area

0 0 0 000h～07Fh

0 0 1 080h～0FFh

0 1 0 100h～17Fh

0 1 1 180h～1FFh

1 0 0 200h～27Fh

1 0 1 280h～2FFh

1 1 0 300h～37Fh

1 1 1 380h～3FFh

Designation of B2, B1, and B0

H56 ＊＊＊

H66 ＊＊ B0

H76 ＊ B1 B0

H86 B2 B1 B0

Technical Note

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●Timing chart

1) Read cycle (READ)

*1 Start bit

When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a

start bit, and the following operation is started. This is common to all the commands to described hereafter.

○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in

sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.

This IC has address auto increment function valid only at read command. This is the function where after the above read

execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment,

keep CS at “H”.

2) Write cycle (WRITE)

○In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall

of CS of D0 taken SK clock(n-th clock from the start bit input), to the rise of the (n+1)-th clock.

When STATUS is not detected, (CS="L" fixed) Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W, and

when STATUS is detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0,

therefore, do not input any command.

Write is not made even if CS is started after input of clock after (n+1)-th clocks.

Note) Take tSKH or more from the rise of the n-th clock to the fall of CS.

3) Write all cycyle (WRAL)

○In this command, input 16bit data is written simultaneously to designated block for 128 words. Data is writen in bulk at a

write time of only Max. 10ms(Max.5ms:BR93H66RFVM-WC) in conformity with tE/W. When writing data to all addresses,

designate each block by B2, B1, and B0, and execute write. Write time is Max.10ms(Max.5ms:BR93H66RFVM-WC). The

actual write starts by the fall of CS from the rise of D0 taken at SK clock (n-th clock from the start bit input), to the rise of the

(n+1)-th clock. When CS is ended after clock input after the rise of the (n+1)-th clock, command is cancelled, and write is

not completed.

Note)Take tSKH or more from the rise of the n-th clock to the fall of CS.

BR93H56/66-WC : n=27, m=7

BR93H76/86-WC : n=29, m=9

CS

1 2

1

4

High-Z

1 Am A1 A0

0 D15 D14 D1 D15 D14

*1

*2

D0

SK

DI

DO

0

～

n n+1

*2 The following address data output

（auto increment function）

tCS

High-Z

B1

READYBUSY

tE/W

DO

0D0

CS

SK

DI

12

01

5m

STATUS

n

D1B0 D151B20

tSV

BR93H56/66-WC : n=27, m=9

BR93H76/86-WC : n=29, m=11

tCS

High-Z

READYBUSY

tE/W

CS

SK

DI

DO

12 4

A1 A00

STATUS

n

D0D1D15 D141Am1

～

tSV

～

BR93H56/66-WC : n=27, m=7

BR93H76/86-WC : n=29, m=9

Fig. 32 Write all cycle

Fig. 31 Write cycle

Fig. 30 Read cycle

Technical Note

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4) Write enable (WEN) / disable (WDS) cycle

○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is

necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable

command is executed or the power is turned off. However, the read command is valid irrespective of write enable /

disable command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it.

○When the write enable command is executed after power on, write enable status gets in. When the write disable

command is executed then, the IC gets in write disable status as same as at power on, and then the write command is

cancelled thereafter in software manner. However, the read command is executable. In write enable status, even when

the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the

write disable command after completion of write.

●Application

1) Method to cancel each command

○READ

○WRITE, WRAL

*1 Address is 8 bits in BR93H56/66-WC

Address is 10 bits in BR93H76/86-WC

*2 27 clocks in BR93H56/66-WC

29 clocks in BR93H76/86-WC

*3 28 clocks in BR93H56/66-WC

30 clocks in BR93H76/86-WC

Fig.34 READ cancel available timing

Fig.35 WRITE, WRAL cancel available timing

BR93H56/66-WC : n=11

BR93H76/86-WC : n=13

a：From start bit to 27 clock rise

Cancel by CS=“L”

b：27 clock rise and after *2

Cancellation is not available by any means. If Vcc is made OFF in this area,

designated address data is not guaranteed, therefore write once again.

c：28 clock rise and after *3

Cancel by CS=“L”

However, when write is started in b area (CS is ended), cancellation is not

available by any means.

And when SK clock is input continuously, cancellation is not available.

Start bit Ope code Address Data

1bit 2bit 8bit 16bit

Cancel is available in all areas in read mode.

●Method to cancel：cancel by CS=“L”

*1 *1 Address is 8 bits in BR93H56-WC, and BR93H66-WC.

Address is 10 bits in BR93H76-WC, and BR93H86-WC.

Start bit Ope code Address Data tE/W

a

*1

1bit 2bit 8bit 16bit

C

SK

・Rise of 27clock *2

D1

Enlarged figure

D0

DI

26 27

b

28 29

a b c

Note 1) If Vcc is made OFF in this area,

designated address data is not guaranteed,

therefore write once again.

Note 2) If CS is started at the same timing as that of

the SK rise, write execution/cancel becomes

unstable, therefore, it is recommended to fail in

SK=”L” area. As for SK rise, recommend timing of

tCSS/tCSH or higher.

CS

1 2

1

5

High-Z

0 0

SK

DI

DO

n3 4 6 7 8

ENABLE=1 1

DISABLE=0 0

～

Fig. 33 Write enable (WEN) / disable (WDS) cycle

Technical Note

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2) Equivalent circuit

○Output circuit

○Input circuit

3) I/O peripheral circuit

3-1) Pull down CS.

By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.

Refer to the item 6) Notes at power ON/OFF in page 34/35.

○Pull down resistance Rpd of CS pin

To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary.

Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.

DO

OEint.

CS

RESET int.

LPF CSint.

EN

TEST2

Fig.36 Output circuit (DO)

Fig.39 Input circuit (SK, DI)

Fig.37 Input circuit (CS)

Fig.40 Input circuit (TEST2)

Fig.41 CS pull down resistance

TEST1

(TEST)

TESTint.

SK

DI

EN

LPF SK(DI)int.

Fig.38 Input circuit (TEST1, TEST)

Microcontroller

VOHM

“H” output IOHM Rpd

VIHE

“L” input

EEPROM

VOHM

IOHM

Rpd ≧ ・・・①

2.4

2×10-3

∴ Rpd

≧ 1.2 [kΩ]

VOHM ≧ VIHE ・・・②

Rpd ≧

Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,

from the equation ①,

With the value of Rpd to satisfy the above equation, VOHM becomes

2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.

: EEPROM VIH specifications

: Microcontroller VOH specifications

:Microcontroller IOH specifications

・VIHE

・VOHM

・IOHM

Technical Note

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CS

SK

DI

DO

D0

BUSY

READY

High-Z

Enlarged

CS

SK

DI

DO

BUSY

High-Z

Improvement by DO pull up

BUSY

READY

CS=SK=DI=”H”

When DO=OPEN

CS=SK=DI=”H”

When DO=pull up

DO

“H”

3-2) DO is available in both pull up and pull down.

Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write

command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to

pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN. If DO is

OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes thisas a

start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output,

pull up DO pin for improvement.

○Pull up resistance Rpu and pull down resistance Rpd of DO pin

As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller

VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.

Fig.42 READY output timing at DO=OPEN

Fig.43 DO pull up resistance

Fig.44 DO pull down resistance

Microcontroller

VILM

“L” input

IOLE

VOLE

“L” output

EEPROM

Rpu

Rpu ≧ ・・・③

5－0.4

2.1×10-3

∴ Rpu

≧ 2.2 [kΩ]

VOLE ≦ VILM ・・・④

Rpu ≧

Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,

from the equation ③,

Vcc－VOLE

IOLE

With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or

below, and with VILM(=0.8V), the equation ④ is also satisfied.

Microcontroller

VIHM

“H” input IOHE

VOHE

“H” output

EEPROM

Rpd

Rpd ≧ ・・・⑤

5－0.2

0.1×10-3

∴ Rpd

≧ 48 [kΩ]

VOHE ≧ VIHM ・・・⑥

Rpd ≧

Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,

VIHM=Vcc×0.7V from the equation ⑤

VOHE

IOHE

With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V o

r

below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.

・VOLE

・IOLE

・VILM : EEPROM VOL specifications

: EEPROM IOL specifications

: Microcontroller VIL specifications

・VOLE

・IOLE

・VILM

: EEPROM VOH specifications

: EEPROM IOH specifications

: Microcontroller VIH specifications

・VOHE

・IOHE

・VIHM

Technical Note

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○READY / BUSY status display (DO terminal)

(common to BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC)

This display outputs the internal status signal. When CS is started after tCS (Min.200ns)

from CS fall after write command input, “H” or “L” output.

R/B display＝“L” (BUSY) = write under execution

After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.

And write to the memory cell is made in the period of tE/W, and during this period, other command is not

accepted.

R/B display = “H” (READY) = command wait status

Even after tE/W (max.10ms) (Max.5ms:BR93H66RFVM-WC) from write of the memory cell, the following

command is accepted.

Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore,

DI=“L” in the area

CS=“H”. (Especially, in the case of shared input port, attention is required.)

*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.

Therefore, status READY output is cancelled, and malfunction and mistake write may be made.

4) When to directly connect DI and DO

This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,

meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line.

○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.

Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the

same time in the following points.

4-1) 1 clock cycle to take in A0 address data at read command

Dummy bit “0” is output to DO terminal.

→When address data A0 = “1” input, through current route occurs.

CS

High-Z

SK

DI

DO

CLOCK

WRITE

INSTRUCTION

READY

BUSY

STATUS

（DO status）

Fig.45 R/B status output timing chart

tSV

Microcontroller

DI/O PORT

DI

EEPROM

DO

R

Fig.46 DI, DO control line common connection

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

A1

High-Z

Collision of DI input and DO output

“H”

A0

0 D15 D14 D13

A1 A0 High-Z

Microcontroller output Microcontroller input

Fig.47 Collision timing at read data output at DI, DO direct connection

Technical Note

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4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.

When the next start bit input is recognized, “HIGH-Z” gets in.

→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,

READY output “H” is output from DO terminal, and through current route occurs.

Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted.

○Selection of resistance value R

The resistance R becomes through current limit resistance at data collision. When through current flows, noises of

power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,

the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so

forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL,

even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence

upon basic operations.

4-3) Address data A0 = “1” input, dummy bit “0” output timing

(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)

・Make the through current to EEPROM 10mA or below.

・See to it that the input level VIH of EEPROM should satisfy the following.

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

Write command

Microcontroller output

BUSY

BUSY READY

READY

Collision of DI input and DO output

～

High-Z

Write command

Microcontroller input Microcontroller output

Fig.48 Collision timing at DI, DO direct connection

Microcontroller

DI/O PORT DI

EEPROM

DO

R

“H” output

IOHM

VOHM

VOLE

“L” output

Fig.49 Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)

Conditions

VOHM ≦ VIHE

VOHM ≦ IOHM×R + VOLE

At this moment, if VOLE=0V,

VOHM ≦ IOHM×R

∴ R ≧ ・・・⑦

VOHM

IOHM

: EEPROM VIH specifications

: EEPROM VOL specifications

: Microcontroller VOH specifications

: Microcontroller IOH specifications

・VIHE

・VOLE

・VOHM

・IOHM

Technical Note

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4-4) DO status READY output timing

(When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI)

・Set the EEPROM input level VIL so as to satisfy the following.

5) Notes at test pin wrong input

There is no influence of external input upon TEST2 pin.

For TEST1 (TEST)pin, input must be GND or OPEN. If H level is input, the following may occur,

1. At WEN, WDS, READ command input

There is no influence by TEST1 (TEST) pin.

2. WRITE, WRAL command input

Microcontroller

DI/O PORT DI

EEPROM

DO

R

“L” output

IOHM

VOLM

VOHE “H” output

Conditions

VOLM ≧ VILE

VOLM ≧ VOHE – IOLM×R

As this moment, if VOHE=Vcc,

VOLM ≧ Vcc – IOLM×R

∴ R ≧ ・・・⑧

Vcc – VOLM

IOLM

Fig.50 Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)

Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,

From the equation ⑦, From the equation ⑧,

R ≧

VOHM

IOHM

5

0.4×10-3

∴ R ≧ 12.5 [kΩ] ・・・⑨

R ≧

Vcc – VOLM

IOLM

5 – 0.4

2.1×10-3

∴ R ≧ 2.2 [kΩ] ・・・⑩

Therefore, from the equations ⑨ and ⑩,

∴ R ≧ 12.5 [kΩ]

Start bit Ope code Address* Data t

E/W

a

1bits 2bits 8bits 16bits

a：There is no influence by TEST1 (TEST) pin.

b：If H during write execution, it may not be written correctly. And H area remains BUSY and READY does not go back.

Avoid noise input, and at use, be sure to connect it to GND terminal or set it OPEN.

Write start

CS rise timing

Fig.51 TEST1(TEST) pin wrong input timing

* BR93H56-WC, BR93H66-WC, address 8 bits

BR93H76-WC, BR93H86-WC, address 10 bits

: EEPROM VIL specifications

: EEPROM VOH specifications

: Microcontroller VOL specifications

: Microcontroller IOL specifications

・VILE

・VOHE

・VOLM

・IOLM

Technical Note

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6) Notes on power ON/OFF

・At power ON/OFF, set CS “L”.

When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise.

(When CS is in “L” status, all inputs are cancelled.) At power decline low power status may prevail. Therefore, at power

OFF, set CS “L” to prevent malfunction from noise.

○POR citcuit

This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write

disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is

“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the

follwing conditions.

1. Set CS=”L”

2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.

○LVCC circuit

LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.

At LVCC voltage (Typ.=1.9V) or below, it prevent data rewrite.

7) Noise countermeasures

○VCC noise (bypass capacitor)

When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is

recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC

as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.

○SK noise

When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock

bit displacement.

To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.3, if noises

exist at SK input, set the noise amplitude 0.3p-p or below. And it is recommended to set the rise time (tR) of SK 100ns or

below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall

time as small as possible.

tOFF

tR

Vbot

0

VCC

tRtOFF Vbot

10ms or below 10ms or higher 0.3V or below

100ms or below 10ms or higher 0.2V or below

VCC

GND

VCC

GND

VCC

CS

Bad example Good example

Fig.52 Timing at power ON/OFF

Fig.53 Rise waveform diagram

（Bad example）CS pin is pulled up to Vcc.

In this case, CS becomes “H” (active status), EEPROM may

malfunction or have write error due to noises. This is true even

when CS input is High-Z.

（Good example）It is “L” at power ON/OFF.

Set 10ms or higher to recharge at power OFF.

When power is turned on without observing this condition,

IC internal circuit may not be reset.

Recommended conditions of tR, tOFF, Vbot

Technical Note

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●Cautions on use

(1) Described numeric values and data are design representative values, and the values are not guaranteed.

(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further

sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in

consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.

(3) Absolute Maximum Ratings

If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC

may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear

exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that

conditions exceeding the absolute maximum ratings should not be impressed to IC.

(4) GND electric potential

Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that

of GND terminal in consideration of transition status.

(5) Heat design

In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.

(6) Terminal to terminal shortcircuit and wrong packaging

When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may

destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND

owing to foreign matter, IC may be destructed.

(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.

Technical Note

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B R 9 3 L 4 6 F J - W E 2

ROHM Type

name

BUSType

93：Microwire

Operating

temperature

L:-40℃~+85℃

A:-40℃~+105℃

H:-40℃~+125℃

Capacity

46=1K

56=2K

66=4K

76=8K

86=16K

Package type

F,RF

:SOP8

FJ,RFJ

:SOP-J8

Double cell Package specifications

E2：reel shape emboss taping

TR：reel shape emboss taping

L:W

A:WM

H:WC

FV,RFV

: SSOP-B8

FVT,RFVT

: TSSOP-B8

RFVJ

: TSSOP-B8J

RFVM

: MSOP8

(Unit : mm)

SOP8

0.9±0.15

0.3MIN

4

°

+

6

°

−

4

°

0.17 +0.1

-

0.05

0.595

6

43

8

2

5

1

7

5.0±0.2

6.2±0.3

4.4±0.2

(MAX 5.35 include BURR)

1.27

0.11

0.42±0.1

1.5±0.1

S

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

(Unit : mm)

SOP-J8

4°+6°

−4°

0.2±0.1

0.45MIN

234

5678

1

4.9±0.2

0.545

3.9±0.2

6.0±0.3

(MAX 5.25 include BURR)

0.42±0.1

1.27

0.175

1.375±0.1

0.1 S

S

Technical Note

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www.rohm.com 2011.09 - Rev.G

(Unit : mm)

TSSOP-B8

0.08 S

0.08

M

4 ± 4

234

8765

1

1.0±0.05

1PIN MARK

0.525

0.245+0.05

–0.04

0.65

0.145+0.05

–0.03

0.1±0.05

1.2MAX

3.0±0.1

4.4±0.1

6.4±0.2

0.5±0.15

1.0±0.2

(MAX 3.35 include BURR)

S

Direction of feed

Reel ∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

E2

()

1pin

(Unit : mm)

SSOP-B8

0.08

M

1234

5678

0.1

+0.06

-

0.04

0.22

0.3MIN

0.65

(0.52)

3.0±0.2

0.15±0.1

6.4±0.3

1.15±0.1 4.4±0.2

(MAX 3.35 include BURR)

S

0.1

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

(Unit : mm)

TSSOP-B8J

0.08

M

0.08 S

S

4 ± 4

(MAX 3.35 include BURR)

578

1234

6

3.0±0.1

1PIN MARK

0.95±0.2

0.65

4.9±0.2

3.0±0.1

0.45±0.15

0.85±0.05

0.145

0.1±0.05

0.32

0.525

1.1MAX

+0.05

–0.03

+0.05

–0.04

Direction of feed

Reel

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

1pin

Technical Note

BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series

40/40

www.rohm.com 2011.09 - Rev.G

(Unit : mm)

MSOP8

0.08 S

S

4.0±0.2

8

3

2.8±0.1

1

6

2.9±0.1

0.475

4

57

(MAX 3.25 include BURR)

2

1PIN MARK

0.9MAX

0.75±0.05

0.65

0.08±0.05

0.22 +0.05

–0.04

0.6±0.2

0.29±0.15

0.145 +0.05

–0.03

4°

+6°

−4°

Direction of feed

Reel

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

TR

()

1pin

R1120

A

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Notes

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the specications,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products specied in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, re or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-

controller or other safety device). ROHM shall bear no responsibility in any way for use of any

of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.