IRF460 TO-3 (TO-204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 - Gate Pin 2 - Source VDSS ID(cont) RDS(on) 500V 21A 0.27 Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS Drain - Source Voltage 500 V ID Continuous Drain Current 21 A IDM Pulsed Drain Current 1 84 A VGS Gate - Source Voltage 20 V Total Power Dissipation @ Tcase = 25C 300 W PD Derate Linearly 2.4 W/C TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063" from Case for 10 Sec. -55 to 150 C 300 STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic Drain - Source Breakdown Voltage Test Conditions VGS = 0V , ID = 1mA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125C 250 IGSS Gate - Source Leakage Current VGS = 20V , VDS = 0V 100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 250A 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain - Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 500 2 Typ. Max. Unit V 21 A A VGS = 10V , ID = 13A 0.27 VGS = 10V , ID = 21A 0.31 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 IRF460 DYNAMIC CHARACTERISTICS Characteristic Test Conditions Ciss Input Capacitance VGS = 0V Min. 2890 Typ. Max. Unit Coss Output Capacitance VDS = 25V 590 Crss Reverse Transfer Capacitance f = 1MHz 230 Qg Total Gate Charge3 VGS = 10V 140 190 Qgs Gate - Source Charge VDD = 0.5 VDSS 18 27 Qgd Gate - Drain ("Miller") Charge ID = ID [Cont.] @ 25C 75 135 td(on) Turn-on Delay Time VGS = 15V 19 35 tr Rise Time VDD = 0.5 VDSS 43 120 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25C 85 130 tf Fall Time RG = 1.8 56 98 pF nC ns SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 21 A 84 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = - ID [Cont.] 1.8 V trr Reverse Recovery Time IS = - ID [Cont.] , dls / dt = 100A/s 580 ns Qrr Reverse Recovery Charge IS = - ID [Cont.] , dls / dt = 100A/s 8.1 C THERMAL CHARACTERISTICS RJC Characteristic Junction to Case RJA Junction to Ambient Min. Typ. Max. Unit 0.42 C/W 30 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98