SAMSUNG ELECTRONICS INC 42E D ?9b4R42 OOOW2L & BMSHGK MJD127 _ PNP SILICON DARLINGTON TRANSISTOR T3231 D-PACK FOR SURFACE MOUNT D-PACK APPLICATIONS * High DC Current Gain e Built-in a Damper Diode at E-C * Lead Formed for Surface Mount Applications (No Suffix) * Straight Lead (I-PACK, - 1 Suffix) Electrically Similar to Popular TIP127 ABSOLUTE MAXIMUM RATINGS (T,= 25C) ELECTRICAL CHARACTERISTICS (T,= 25C) } ; 1-PACK Characteristic Symbo! : Rating Unit Collector Base Voltage Vezo 100 Vv Collector Emitter Voltage Veco ~ 100 Vv Emitter Base Voltage Veeo 5 Vv Collector Current (DC) lo -8 A Collector Current (Pulse) le -16 A Base Current ls - 120 A Collector Dissipation (T, = 25C) P. 20 Ww Collector Dissipation (T,= 25C) P. 1.75 WwW Junction Temperature T 150 C Storage Temperature Tatg -65~150 | C Characteristic Symbol Test Condition Min Max Unit | Collector Emitter Sustaining Voltage | Vceo(sus) | Ic= ~30mA, la=0 100 Vv } Collector Cutoff Current lceo Voce = 50V, lp =0 -10 pA . Collector Cutoff Current Sego Ves = 100V, le=0 -10 pA Emitter Cutoff Current leBo Ves = 5V, Io=0 2 mA *DOC Current Gain Nee Voe= 4V, Ig = 4A 1000 12K Voe= -4V, le= 8A 400 *Collector Emitter Saturation Voltage | Vce(sat) Io= 4A, lp= 16MA -2 Vv . Io= ~8A, las 80mA. ~4 v *Base Emitter Saturation Voltage Vec(sat) Io = 8A, Ig= ~80mMA -4.5 v *Base Emitter On Voltage Vae(on) Voces 4A, lo= 4A -28 Vv Output Capacitance Cos Voce = 10V, [g=0 300 pF f=0.1MHz * Pulse Test: PW<300yS, Duty Cycle<2% oG po K oy AAA AAA. v OE iA 1 #8 SAMSUNG 70 Electronicsha r SAMSUNG ELECTRONICS INC HEE D MM 794414e o00%0e7 T BESNGK MJD127 PNP SILICON DARLINGTON TRANSISTOR T > 33-3) BASE EMITTER SATURATION VOLTAGE 0000 DC CURRENT GAIN COLLECTOR EMITTER SATURATION VOLTAGE -10 5000 "gy 75 < a ray ~2 z > ~ a 2000 g ~1i 6 = 5 & zB -05 g 1000 a 3 = ~0.2 a 500 z 2 Tw -04 = 2 -0.05 0 = ~0.02 100 2 -0.01 -04 ~02 -05 =1 -2 - ~10 01-02 -05 =1 -2 -5 -10 20 50 -100 ic{A}, COLLECTOR CURRENT tce{A}, COLLECTOR CURRENT COLLECTOR OUTPUT CAPACITANCE TURN ON TIME 1000 500 200 2 = 8 100 e 1 2 z Ee 3 S60 z 8 . < a > - ec % Gq o2 = $s 3 3: 10 es Oo 5 0.05 2 0.02 t 0.01 701-02 -05 -{ -2 -5 -10 -20 ~50 -100 -04 -02 -05 -1 -2 -6 -10 Ves{), COLLECTOR BASE VOLTAGE Ic{A), COLLECTOR CURRENT TURN OFF TIME SAFE OPERATING AREA 10 -100 5 -50 . -20 2 - w 5 10 = wa F 1 = -5 Le J 5 o -2 05 e 2 5 E -1 w Be (02 4-05 a 3 3 : OT -0.2 0.1 0.05 0.05 0,02 0.0t 01 -0.02 he e -0.01 ! =02 ~05 -1 2 -5 10 ~f -20 -5 -10 -20 -50-100 -200 8001000 IcfA}, COLLECTOR CURRENT . Vee(V}, COLLECTOR EMITTER VOLTAGE & SAMSUNG Sg ElectronicsSAMSUNG ELECTRONICS INC u2E ) MM 7964242 OOOIO28 1 BBSNGK MJD127 PNP SILICON DARLINGTON TRANSISTOR POWER DERATING T- 33 - 3| Pp{W), POWER DISSIPATION Q 25 50 75 100 126 160 175 200 225 250 T.{C}, CASE TEMPERATURE & SAMSUNG Electronics we gq 72