SUMMARY
VR= 40V; IFAV = 510mA;
VF= 405mV typ @ 100mA; IR= 7µA typ @ 30V
DESCRIPTION
Packaged in the SOD523 package this addition to the
Zetex Schottky diode range offers an ideal low VF/IR
performance combined with a low package height of
0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
FEATURES
•Vr = 40V
•Low VF
•350mA continuous current rating
•Low profile SOD523 package (0.9mm)
•100% matte tin plated external leads
APPLICATIONS
•DC - DC converters
•Mobile telecomms
•Charger circuits
•LED driver circuits
•MOSFET voltage protection circuits
•High frequency rectification
Prior to May 2005 (Pb free conversion date) a prefix ‘u’
will be applied to the part numberto denote Pb free for
ordering purposes only.
DEVICE MARKING
•35
ZHCS350
ISSUE 1 - AUGUST 2004
SOD523 40V LOW VFSCHOTTKY BARRIER DIODE
1
SOD523
PINOUT
TOP VIEW
DEVICE REEL
SIZE TAPE WIDTH QUANTITY PER
REEL
ZHCS350TA 7” 8mm embossed 3,000 units
ZHCS350TC 13” 8mm embossed 10,000 units
ORDERING INFORMATION
ZHCS350
ISSUE 1 - AUGUST 2004
2
PARAMETER SYMBOL LIMIT UNIT
Continuous Reverse Voltage VR40 V
Continuous Forward Current IF350 mA
Average Peak Forward Current; D.C. = 50% IFAV 510 mA
Non Repetitve Forward Current t < 100µS
< 10mS IFSM 4.2
910 A
mA
Power Dissipation at TA=25°C (a) PD285 mW
Power Dissipation at TA=25°C (b) PD330 mW
Storage Temperature Range Tstg -55 to +150 °C
Junction Temperature Tj 125 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R⍜JA 350 °C/W
Junction to Ambient (b) R⍜JA 303 °C/W
NOTES
(a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
(b) As (a) above measured at t<5 secs.
THERMAL RESISTANCE
ZHCS350
ISSUE 1 - AUGUST 2004
3
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Reverse Breakdown Voltage V(BR)R 40 60 V IR=100␮A
Forward Voltage VF300
335
405
730
325
370
460
810
mV
mV
mV
mV
IF=30mA*
IF=50mA*
IF=100mA*
IF= 350mA*
Reverse Current IR712␮AV
R=30V
Diode Capacitance CD3.3 6 pF f=1MHz; VR=25V
Reverse Recovery Time trr 1.6 nS Switched from
IF=100mA to IR=100mA
Measured at IR=10mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ%
CHARACTERISTICS
ZHCS350
ISSUE 1 - AUGUST 2004
4
TYPICAL CHARACTERISTICS
ZHCS350
ISSUE 1 - AUGUST 2004
5
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2004
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE OUTLINE
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A – 0.800 – 0.0314 E 1.500 1.700 0.0590 0.0669
A1 0.000 0.100 0.000 0.0039 E1 1.100 1.300 0.0433 0.0511
A2 0.600 0.800 0.0236 0.0314 L 0.200 0.400 0.0078 0.0157
b1 0.160 0.300 0.0062 0.0118 L1 0.170 0.230 0.0066 0.0090
c 0.080 0.220 0.0031 0.0086 ⍜1⬚410 4⬚10⬚
D 0.700 0.900 0.0275 0.0354
PACKAGE DIMENSIONS