MOTOROLA SC IXSTRS/R FF Fh a | 6367254 0080416 4 i 6367254 MOTOROLA SC (XSTRS/R F) | ga Bate 5 MOTOROLA D2 . = SEMICONDUCTOR SEE 2NG049 7-32-2/ i TECHNICAL DATA i MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE i .., designed for general-purpose switching and amplifier applications i POWER TRANSISTOR , @ Excellent Safe Operating Area . PNP SILICON @ DC Current Gain Specified to 4.0 Amperes 55 VOLTS @ Complement to NPN Type 2N3054A 75 WATTS , *MAXIMUM RATINGS Rating Symbo! Value Unit Collector-Emitter Voltage VcEO 55 Vde Collector-Emitter Voltage Vcer 60 Vde (Rge = 100 2) - Collector-Base Valtage Vos 90 Vde Emitter-Base Voitage Ves 7.0 Vde Collector Current Continuous Io 4.0 Adc Peak 10 Base Current Ig 2.0 Adc Total Device Dissipation @ Tc = 25C Pp 75 Watts Derate above 25 0.43 wiec Operating and Storage Junction, Ty. Tstg -65 to +200 a vo Temperature Range A Indicates JEDEC Aegistered Data i a 8 c , Ig a+ THERMAL CHARACTERISTICS 7 Characteristic Symbol Max Unit | I D K Therma! Resistance, Ojc 2.33 Sc SEATING PLANE po Junction to Case STYLE1: + PIN 1, BASE 2. EMITTER I CASE: COLLECTOR ; | FIGURE 1 POWER-TEMPERATURE DERATING R Pp, POWER DISSIPATION (WATTS) 0 20 40 60 60 100 120 140 160 180 200 To, CASE TEMPERATURE (C) AN JEDEC Dimensions and and Notes Apply. CASE 80-02 TO-213AA 3-150eeacnere aneene mses a ote cen a MOTOROLA SC LXSTRS/R FI - 6357254 MOTOROLA SC CXSTRS/R F? 2N6049 penne neces n Ch Da epee ed ne ne qb DE e3e7254 *ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) 96D 80417. T- ooaoy17 o | Characteristic Symbol | Min Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) VceEOlsus) Vde (Ig = 100 mAdc, Ip = 0) 55 = Collector-Emitter Sustaining Voltage (1} VCERIsus} Vde {Ig = 100 mAde, Ree = 100 2) 60 = Collector Cuttoff Current IcEO uAde (VcgE = 30 Vde, Ip = 0) = 500 Collector Cutoff Current Icex mAdec (VoE = 90 Vdc, VBE (ott) = 1-5 Vde} _ 1.0 (VcE = 90 Vde, VBE (off) = 1.5 Vdc, - 6.0 Te = 150C) : Emitter Cutoff Current EBO mAdc (VBE = 7.0 Vde, I = 0) = 1,0 ON CHARACTERISTICS (1) DC Current Gain hee ~ (Ig = 500 mAde, Vog = 4.0 Vee} 26 100 {Ig =3.0 Adc, Voge = 4.0 Vde) 6.0 - Collector-Emitter Saturation Voltage VcE (sat) Vde (ic = 500 mAdc, Ig = 50 mAdc} - 0.5 (Ig = 4.0 Ade, Ig = 800 mAdc) = 2.0 Base-Emitter On Voltage VBE (on) Vde (tg = 500 mAdc, Voge = 4.0 Vdc) - 1.0 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product fr MHz (lo = 200 mAdec, Voge. = 10 Vde} 3.0 - Output Capacitance Cob pF (Vop = 10 Vde, fg = 0, f = 0.1 MHz) ~_ 200 Srnall-Signat Current Gain hfe (Ig = 100 mAds, Vcg = 4.0 Vdc, f = 1.0 kHz) 2 180 *(ndicates JEDEC Registered Data (4) Pulse test: Pulse Width 3300 us, Duty Cycle $2.0% FIGURE 2 SWITCHING TIME EQUIVALENT TEST CIRCUIT TURN-OFF PULSE FIGURE 3 TURN-ON TIME 0.04 0.06 O1 0.2 0.6 20 TURN-ON PULSE Icip= Yeo 10 T)= 25C = 30 Vde as Vin 3 03 a Cya<<ley w 02 APPROX 9.0 = s = ay \ i , | } +40V van b---+f/+ ad | ti <15ns +n 0.06 I IN<th< BS APPROK | ts = 15ns on ~11 Tei tbe DUTY CYCLE 2.0% 0.02 1.0 24 40 Ic, COLLECTOR CURRENT (AMP) 3-151feces ae . _: MOTOROLA SC {XSTRS/R FI qk pe Bese7254 oosouss 2 we ee % 6367254 MOTOROLA SC CXSTRS/R FD a 96D 80418 D 2N6049 : 7-33 rel at et mame FIGURE 4 THERMAL RESPONSE ez uo 02 ot Act) = c(t} Ey Pink) 0.07 Oi = 2.33CAV MAX 0.05 0 CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT ty | DUTY Tutpkl ~ Te = Pipk) uct aly t, TIME or PULSE WIDTH (ms) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE oS 3 0.01 0.01 FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA - 10 There are two limitations on the power handling ability of a Ty= 200C transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ic Vg limits of the tran- sistor that must be observed for reliable operation; i.e., the transistor SECOND BREAKDOWN : eaten net ee -= ~ BONDING WIRE LIMITED must not be subjected to greater dissipation than the curves indicate. 77 7 THERMAL LIMITATION @ Te = The data of Figure 5 is based on Ty(pk) = 200C; T is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk} < 200C. TYJ(pk) May be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Rated tc, COLLECTOR CURRENT (AMP) "20 3.0 60 7.0 10 20 30 40 50 6 Vce, COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 6 TURN-OFF TIME FIGURE 7 CAPACITANCE tor Tye Ty= = 10 s _- ww 3 2 2 < Ee 3 = 03 x 5s as 004 006 0.1 02 O4 06 10 20 4.0 O1 0203 05 10 2030 50 10 2 30 0 100 Ic, COLLECTOR CURRENT (AMP) Vp, REVERSE VOLTAGE (VOLTS) 3-152 wmee MOTOROLA SC IXSTRS/R F} 4b De Bese7as4 ooaog44o & i 6367254 MOTOROLA SC (XSTRS/R F) ._ . g6p 80440 OD MOTOROLA = . os 2N6233 ma SEMICONDUCTOR ) 2N6235 . | | | 5 AMPERE POWER TRANSISTORS NPN SILICON HIGH VOLTAGE NPN SILICON TRANSISTORS . useful for high-voltage medium power applications such as switching regulators, 225,275,325 VOLTS High Collector-Emitter Sustaining Voltage 50 WATTS VCEO(sus) = 225 Vde 2N6233 , "325 Vde 2N6236 DC Current Gain hrg = 25 to 125 Ic = 1.0 Ade | Low Collector-Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ Ic = 1.0 Adc High Frequency Response ft = 20 MHz (Min) @ Fast Switching Times @ 1.0 Ade tr = 0.5 us (Max) ts = 3.5 us (Max) tf = 0.5 yas (Max) MAXIMUM RATINGS Rating Symbol 2N65233 | 2N6235 Unit Collector-Emitter Voltage VCEO 225 325 Vdc ! u, A Collector-Base Voltage Ves 250 350 Vde Pp }_ B ec Emitter-Base Voltage Vep 6.0 Vde i we | Collector Current Continuous ~ Ic 5.0 Ade = : Peak 10 | E _-p K Base Current : ip 2.0 Adc SEATING PLANE i Total Device Dissipation @ Te = 25C PD 50 Watts STYLE I: Derate above 25C 0.286 WFC PIN 1. BASE 7 7 | 2, EMITTER Operating and Storage Junction Ty. Tstg 65to +200 Cc | CASE: COLLECTOR 4 Temperature Range - po 4] THERMAL CHARACTERISTICS Characteristic Symbo! Max Unit Thermal Resistance, Junction to Case aC 3.5 CAV indicates JEDEC Registered Data. FIGURE 1 ~ POWER TEMPERATURE DERATING 40 30 20 Pp, POWER DISSIPATION (WATTS) All JEDEC Dimensions and and Notes Apply. CASE 80-02 Tc, CASE TEMPERATURE (C} TO-213AA 3-174MOTOROLA SC {XSTRS/R FH Fh DE eae 7254 ooao44. a i eae ~ wea ee RO Se eee ee 6367254 MOTOROLA SC (XSTRS/R F) .....s 96D 80441 DL " 2N6233, 2N6235 T 33-// *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min | Max Unit OFF CHARACTERISTICS Coliector-Emitter Sustaining Voltage (1} VCEO(sus} Vde . {Ie = 20 mAde, Ig = 0) 2N6233 225 - } 2N6235 325 _ { Collector Cutoff Current ICEO mAdc i (VcE = 225, Ig = 0) 2N6233 - 1.0 I (VCE = 325, ig = 0} 2N6235 1.0 ? i Collector Cutoff Current tcEX mAdc (VCE = 250 Vde, VEB{off) = 1.5 Vde, 2N6233 _ 1.0 | Tc = 160C) i (VcE = 350 Vdc, Vepioff) = 1.8 Vde, 2N6235 - 1,0 i To = 150C} Collector Cutoff Current lcBo mAdc (VcB = 250 Vdc, IE = 0) 2N6233 - 0.1 (Vcop = 350 Vdc, IE = 0) 2N6235 _ 0.1 Emitter Cutoff Current lIEBO - 0.1 mAdc {VBE = 6.0 Vde, Ic = 0) ON CHARACTERISTICS (1) DC Current Gain OFE _ {Ic = 0.1 Ade, VcE = 5.0 Vde} 25 - {Ig = 1.0 Ade, VcE = 5.0 Vdc) 25 126 (Ig = 3.0 Ado, VCE = 5.0 Vdc) 10 - Collector-Emitter Saturation Voltage Vce(sat) Vde (lc = 1.0 Adc, Ig = 0.4 Adc} _ 0.5 (I = 5.0 Adc, Ig = 1.0 Adc) - 25 I Base Emitter Saturation Voitage VBEtsat) Vde (lc = 1.0 Ade, Ig = 0.1 Ade) _ 1.0 (Ic = 5.0 Ade, Ip = 1.0 Adc) _ 2.0 Base-Emitter On Voltage VBEton) 1.0 Vdc ' lg = 1.0 Ade, Vce = 5.0 Vde) DYNAMIC CHARACTERISTICS : Current-Gain Bandwidth Product {2} fr 20 _ MHz (ic = 0.25 Adc, Veg = 10 Vide, fast = 10 MHz) Output Capacitance Cob - 250 pF Vcg = 10 Vde, Ie = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS ! Rise Time tr - 0.5 us (Voc = 200 Vde, I = 1.0 Adc, Ig = 0.1 Adc) Storage Time ts - 3.5 uS (Voc = 200 Vde, Ic = 1.0 Ade, lpi = lpg = 0.1 Adc) Fall Time tt _ 05 BS Veco = 200 Vde, Ig = 1.0 Ado, ig, = Ip2 = 0.1 Adc} *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width & 300 us, Duty Cycte S 2 0%. (2) tr = [Mfe] * frost FIGURE 2 SWITCHING TIME TEST CIRCUIT FIGURE 3 TURN-ON TIME Veco = 200 . I/tg = 10 HOV ser Re =200 0 250 7 SCOPE vr ott fii __ t -WVe -L { &.tr<10ns OUTY CYCLE = 1.0% ~-50V FOR INFORMATION ON FIGURES 3and6 fig AND Re ARE VARIED TO OBTAIN DESIRED CURRENT LEVELZ: 01 DIS- 0.05 0.1 02 03 05 10 20 630 .0 CONNECTED ANO V2 REQUCED TOS VOLTS FOR tg MEASUREMENT. ig, COLLECTOR CURRENT (AMP} 3-175 I fn inaMOTOROLA SC XSTRS/R FI 4b DE Besu72sy OOd044e DQ eae ee eg er ee me eee Ss ee [ 6367254 MOTOROLA SC (XSTRS/R F) | 2N6233, 2N6235 96D 80442. Dp T-33-7/ FIGURE 4 THERMAL RESPONSE 1.0 07 0-05 0.8 a yctt) =r(t) ogc = 3.50C/W Max 0.3 0.2 0.1 0.07 (NORMALIZED) 2 = a O CURVES APPLY FOR POWER 0.03 PULSE TRAIN SHOWN REAO TIME Atty 002 1 r{t), TRANSIENT THERMAL RESISTANCE ! i Te = Pipk) 0.01 0.02 0.03 005 0.1 . A 6.0 afi) 200 4, TIME (ms) FIGURE 5 ACTIVE-REGION SAFE OPERATING AREA 19 5.0 160 ps 2.0 5.0 ms There are two limitations on the power handling ability of @ y=200 | _ transistor: average junction temperature and second breakdown. 40 Safe operating area curves indicate Ic Veg limits of the transis- 0s tor that must be observed for reliable operation; i.e., the transistor te, COLLECTOR CURRENT {AMP} SECONO must not be subjected to greater dissipation than the curves indi- 2 LIMITED cate. WIRE The data of Figure is based on Ty(px) = 200C; Tg is variable 01 LIMITED depending on conditions. Second breakdown pulse limits are valid Y LIMITED @ Tg = for duty cycles to 10% provided TS(pk) = 200. Ty{pk) may be 2N6233 calculated from the data in Figura 4. At high case temperatures, thermal limitations will reduce the power that can be handled to Apply Below rn . Rated VeEo 2N6235 values less than the limitations imposed by second breakdown. 0.01 6.0 7.0 10 20 30 60 70 100 200 guy B00 Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS} FIGURE 6 TURN-OFF TIME FIGURE 7 CAPACITANCES Ie/lg = 10 tg = Ig2 Ty= 2500 t, TIME, (ss) , CAPACITANCE (pF) = 8 - 8 0.05 Ql 02 O38 05 0 5.0 2.0 50 WW 20 50 100 200 ic, COLLECTOR CURRENT (AMP) Vp. REVERSE VOLTAGE (VOLTS) 3-176