TEXAS INSTR LOPTOF b2 DE face172b 0036649 O Z t 4 i 8961726 TEXAS INSTR COPTO) ~~ 62C 36649 OO 1 fey BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS T-sF 32-7 OCTOBER 1982 REVISED OCTOBER 1984 175 W at 25C Case Temperature 15 A Continuous Collector Current 30 A Peak Collector Current Series Features High-Voltage and Peak Current Ratings, Low Saturation Voltages, and a High Degree of Electrical Robustness ! @ Designed for Switching-Mode Power Supplies, CRT Scanning, Inverters, and Other Industrial Applications Where Rapid Switching of Inductive Loads is Necessary device schematic TO-3 PACKAGE r t I { t t ' I { Lu THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE absolute maximum ratings at 25C case temperature (unless otherwise noted) BUX48 BUX48A 1 current current (see surge current current current case temperature NOTE 1: These values apply for ty < 5 ms, duty cycle < 10%. a 5 a > > ao x a] a > ca x Qa a = a a Qa fs a] 4283 ; TEXAS wy INSTRUMENTS 3-53 POST OF FICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR COPTOF be DE Patei72b 0036650 7 T qd Ana *xng na xag mda ag S9DIAD BUX48, BUX48A N-P-N SILICON POWER TRANSISTOR ta, 5 q xy 8961726 TEXAS INSTR COPTO) 62C 36650 D T= 33-15 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER VcE (eat) VBE(sat) thermal characteristics TEST CONDITIONS BUX48 MIN TYP MAX NOTES: 2. These parameters must be measured using pulse techniques, ty, = 5ms, duty cycle < 2%. 3. To obtain fz, the [hel response is extrapolated at the tate of 6 dB per octave from f = 1 MHz to the frequency at which [Mel = 1. BUX48A MIN TYP MAX [PARAMETER [ MIN TYP MAX | UNIT { L__ Rese [3 1 [ecw | resistive-load switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS aN a aa ax] UNIT = ic = 10A, Vec = 180V, gi = 2A, ; = i ipo = -2A, See Figure 1 o8 s 2 Ic = 8A, Vee = 150V, Igy = 1.6A, u = 7 Ipo = 1.6A, See Figure 1 0.8 us inductive-load switching characteristics at 100C case temperature (unless otherwise noted) BUX48 BUX48A INSTRUMENTS POST OFFICE BOX 225012 DALLAS. TEXAS 75265 PARAMETER TEST CONDITIONS UNIT MIN TYP MAX | MIN TYP MAX ts Ic = 10A, Veco = 300V, Ip, = 2A, 5 us * tf Vg = 5V, Lp = 3yH, See Figure 2 0.4 ys . ts le = BA, Vec = 300V, igi = 1.6A, 5 | us tt Ve = -5V, Lg = 3pH, See Figure 2 0.4 pS ff - TEXAS ap 1263 iTEXAS INSTR {0PTO} be DE Pjadbi72b OO3&b51 4 i sean 8961726 TEXAS INSTR COPTO) 62C 36651 D } aE eS BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS 7T-33 -/ Ss PARAMETER MEASUREMENT INFORMATION . BY 33.9 > TIP30 Re ? ON Re Vgen 2N2222 Veg =160V mi 100 pF 270 2 BY205 2 . cite =1% a > 100 2 = VorFF a TEST CIRCUIT < : > i qa 1 > oO ; x< Qa m = a a | ay : CURRENT WAVEFORMS a FIGURE 1. RESISTIVE-LOAD SWITCHING | i 1263 . TEXAS %% 3-55 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 { edTEXAS INSTR LOPTO? be ODE Bece17c O03bb52 o i 8981726 TEXAS INSTR COPTO) -_ 62C 36652 BUX48, BUX48A 7-33H1S N-P-N SILICON POWER TRANSISTORS . ar a ate . - we oT. OC. toe PARAMETER MEASUREMENT INFORMATION , BY205-400 Terr Voc = 300 V j- BY205-400- Le=15mH R#*22 He Tut I i ba=3.2H - . Va=-5v | ty adjusted for Ig Duty Cycle = 3% TEST CIRCUIT 1h . ig I . s ===F=\ 09 te Vcc Voce na Xag mag ag er ar < - QO 0! Cc : ~< VOLTAGE AND CURRENT WAVEFORMS . ow NOTES: A. The Vgen waveform is supplied by a generator with the following characteristics: tp < 15ns, t< 15s, Zour = 502, Cc ty = 20us, duty cycle < 2%, =Z B. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15ns, Rig > 10 MO, Ci, < 11.5 pF. C. Resistors must be noninductive types. 0 . g FIGURE 2. iINDUCTIVE-LOAD SWITCHING n i t. . A 3-56 : TEXAS ae a INSTRUMENTS POST OFFICE BOX 225612 @ DALLAS. TEXAS 75265 D 1283 neTEXAS INSTR fOPTO} be DE Pjsse1726 00564654 2 i 1 8961726 te AY - s ce . . > Dow COLLECTOR-EMITTER VOLTAGE VS COLLECTOR CURRENT ip=0.4A a (BEO.2A lc Collector Current A > N To = 25C BASE-EMITTER SATURATION VOLTAGE VS BASE CURRENT ~ a 15 1.4 1.3 m NS = - - S wo Te = 25C VBE(sat) Base-Emitter Saturation Voltage V TEXAS INSTR COPTO> TYPICAL CHARACTERISTICS 6 Igp=2A 5 Ip=18A 14 ip=16A Ig = 14A 4 12 Ip=12A =1A 10 208 Ip=08A 3 ip =0.6A 0 0 0 2 4 6 8 10 0.1 0.4 1 4 10 VcE Collector-Emitter Voltage V (g Base Current A FIGURE 3 FIGURE 4 _ : 62C 36653 D BUX48, BUX48A . N-P-N SILICON POWER TRANSISTORS 7233-/35 COLLECTOR-EMITTER SATURATION VOLTAGE VS BASE CURRENT Tc= c --~ Te = 100 VCE(sat) Collector-Emitter Saturation Voltage ~ V FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT Tc = 128C Vce=5V - Te = 25C Te =68C ' hee Forward Current Transfer Ratio BD, BDW, BDX, BU, BUX, BUY Devices 08 0 1 2 3 4 5 6 0.1 0.4 1 4 10 40 100 ig Base Current ~A Ic Collector Current A FIGURE 5 FIGUREG | : % 1283 TEXAS 3-57 INSTRUMENTS POST OFFICE 8OX 225012 DALLAS, TEXAS 75265 7TEXAS INSTR LOPTO? be DE Bedbi7eb OOS 4 t 8961726 TEXAS INSTR COPTO) ~ s 2c 36654. =D? BUX48, BUX48A 7-33-15 N-P-N SILICON POWER TRANSISTORS * fe ~~, TYPICAL CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE COLLECTOR CUTOFF CURRENT . vs vs BASE-EMITTER RESISTANCE CASE TEMPERATURE 10 1000 Te = 25C > q 4 VBE =0 1 900 1 i 5 8 5 41 800 5 in + 700 2 04 & 3S S 2 = 0.1 500 s 1 49 0.04 8 400 3 300 0.01 - 1 4 10 40100 400 1k 4k 10k -80 40 0 40 80 120 ReE Base-Emitter Resistance 2 Tc Case Temperature C FIGURE 7 . FIGURE 8 MAXIMUM SAFE OPERATING AREA 7 Qa 9 wo Oo = oo: 3 FORWARD-BIAS SAFE OPERATING AREA REVERSE-BIAS SAFE OPERATING AREA 100 15 - = 9r o Te =25C < Ia1 = Ie/S c 40 , VBE(off) = 5V #12 Te= 100C Bin x Fs 6 4 9 a Gs 5 < 5 0.4 %6 a 9 ' i <. 2 0.1 % 3 Q a 0,04 = =-~ BUX48 2 |--- Buxas 0.01 0 1 4 10 40 100 400 1000 0 100 200 300 400 500 600 700 800 900 VCE Collector-Emitter Voltage V VCE(peak) Peak Collector-Emitter Voltage V FIGURE 9 FIGURE 10 43 . 3-58 TEXAS ap ; 1283 ; INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 : . | ___._ (AES ahTEXAS INSTR {OPTO} b2 DE Jadu1zan OO3LL55 & i q g SS61726 TEXAS INSTR COPTO) RE 36655 BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS T-33/95 MAXIMUM SAFE OPERATING AREA Veelic INDUCTIVE Locus LOAD SHAPING CIRCUIT BASE DRIVE UNIT TUT PEAK CONTROLLING . . VOLTAGE CLAMP 'B4 'p2 - Ve loff) t j os PEAK Ig > SENSE OE FIGURE 11. TEST CIRCUIT FOR POWER-DOWN TRANSIENT THERMAL INFORMATION LIMITING CONDITION FOR POWER-DOWN TRANSIENT DISSIPATION DERATING CURVE 100 0.6 A<Ip2<2A Ina < 3A To <100C q a oe o Percent of Rated Power % P= oOo Ig Collector Current A nN eo 0 40 80 120 160 200 Tc Case Temperature - C FIGURE 13 Q 200 400 600 800 1000 VceE Collactor-Emittar Voltage V FIGURE 12 ; n zea TEXAS % INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 3-59 F o! BD, BDW, BDX, BU, BUX, BUY Devices