Dual IGBT
NFH-Series Module
100 Amperes/1200 Volts
CM100DU-24NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
109/14 Rev. 2
Outline Drawing and Circuit Diagram
Description:
Powerex IGBT Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM100DU-24NFH is a 1200V
(VCES), 100 Ampere Dual
IGBT Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 100 24
R
C2E1
E2 C1
E1
G1
E2
G2
G2E2
C2E1 E2 C1
E1G1
TC MEASUREMENT POINT
S
T
E
G
F
F
B
A
D
KKM
N
J
W
V X V
C
W W W
P - NUTS (3 TYP)
Q - (2 TYP)
H
LABEL L
U
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18+0.04/-0.01 30.0+1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.51 13.0
J 0.53 13.5
K 0.91 23.0
L 0.83 21.2
Dimensions Inches Millimeters
M 0.67 17.0
N 0.28 7.0
P M5 Metric M5
Q 0.26 Dia. Dia. 6.5
R 0.02 4.0
S 0.94 24.0
T 0.3 7.5
U 0.47 12.0
V 0.63 16.0
W 0.1 2.5
X 0.98 25.0
CM100DU-24NFH
Dual IGBT NFH-Series Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
209/14 Rev. 2
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM100DU-24NF Units
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (Operation)*2 IC 100 Amperes
Peak Collector Current (Pulse)*2 ICM 200 Amperes
Emitter Current (Operation)*2 IE*1 100 Amperes
Peak Emitter Current (Pulse)*2 IEM*1 200 Amperes
Maximum Collector Dissipation (TC = 25°C) PC*3 560 Watts
Maximum Collector Dissipation (TC' = 25°C)*7 PC'*3 730 Watts
Junction Temperature Tj –40 ~ +150 °C
Storage Temperature Tstg –40 ~ +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 Minute) VISO 2500 Volts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 100A, VGE = 15V, Tj = 125°C — 5.0 — Volts
Input Capacitance Cies — — 16 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.3 nf
Reverse Transfer Capacitance Cres — — 0.3 nf
Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC
Turn-on Delay Time td(on) — — 100 ns
Turn-on Rise Time tr VCC = 600V, IC = 100A, — — 50 ns
Turn-off Delay Time td(off) VGE = ±15V, RG = 3.1Ω, — — 250 ns
Turn-off Fall Time tf Inductive Load, — — 150 ns
Diode Reverse Recovery Time trr*1 IE = 100A — — 150 ns
Diode Reverse Recovery Charge Qrr*1 — 5.0 — µC
Emitter-Collector Voltage VEC*1 IE = 100A, VGE = 0V — — 3.5 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*7 Case temperature (TC') measured point is just under the chips.
CM100DU-24NFH
Dual IGBT NFH-Series Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
309/14 Rev. 2
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance*4 Rth(j-c)Q Per IGBT 1/2 Module — — 0.22 K/W
Junction to Case
Thermal Resistance*4 Rth(j-c)D Per FWDi 1/2 Module — — 0.47 K/W
Junction to Case
Contact Thermal Resistance*5 Rth(c-f) Per 1/2 Module, — 0.07 — K/W
Case to Heatsink Thermal Grease Applied
Thermal Resistance*7 Rth(j-c)'Q Per IGBT 1/2 Module — — 0.17*6 K/W
Junction to Case
Thermal Resistance*7 Rth(j-c)'D Per FWDi 1/2 Module — — 0.29*6 K/W
Junction to Case
External Gate Resistance RG 3.1 — 31 Ω
*4 Case temperature (TC) measured point is shown on page 1 of the outline drawng.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*6 If you use this value, Rth(f-a) should be measured just under the chips.
*7 Case temperature (TC') measured point is just under the chips.
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1
101
01 3425
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6810 1412 16 18 20
8
6
4
2
0
Tj = 25°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
150
0515
100
50
020
VGE = 10V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 200A
IC = 100A
IC = 40A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246 810
50
0
VGE = 20V
10
11
12
13
14
15
9
8
Tj = 25°C
100
150
200
10
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
4
5
6
3
050 150
7
2
8
1
0200
VGE = 15V
Tj = 25°C
Tj = 125°C
100
10-1
CM100DU-24NFH
Dual IGBT NFH-Series Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
409/14 Rev. 2
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.22 K/W
(IGBT)
Rth(j-c) =
0.47 K/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
100 200 400300500 6007
00
VCC = 600V
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 25°C
Inductive Load
VCC = 400V
IC = 100A
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
101
101102
100
10-1
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
ESW(on)
ESW(off)
Irr
trr
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
ESW(on)
ESW(off)
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101102
101
100
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
Err
Err