MOTOROLA SC (DIODES/OPTO) Triacs ese D Silicon Bidirectional Thyristors ... designed primarily for industrial and military applications for the fullwave control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power switching systems. @ All Diffused and Giass Passivated Junctions for Greater Stability Pressfit and Stud Packages @ Gate Triggering Guaranteed In All 4 Quadrants Mf 6367255 GOS107b & Mm TASS MAC245 SC246 TRIAG 10 AMPERES RMS 200 thru 800 VOLTS MT2 o fe omr | 6 CASE 174-04 (TQ-203AA) STYLE 3 8C246 PRESS FIT CASE 263-04 STYLE 2 MAC245 STUD MAXIMUM RATINGS / ; Rating Symbol Value Unit Repetitive Peak Off-State Voltage (1) VDRM Volts Te = -40C to +100C $C2468, MAC245B 200 $C246D, MAC245D 400 SC246M, MAC245M 600 SC246N, MAC245N 800 RMS On-State Current ITiRMS} | 10 Amps Peak Non-Repetitive Surge Current Itsm 100 Amps (One Full Cycle, 60 Hz) Cireult Fusing Considerations 12 A2s t=1ms 20 t = 8.3 ms 415 Peak Gate Power Pam 10 Watts Average Gate Power PGIAVv) 0.5 Watt Operating Junction Temperature Range Ty ~40 to +100 *C Storage Temperature Range Tatg | 40to +125 C Stud Torqua _ 30 in. tb. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junctlon to Case Rec 2 oCAWN (1) Retings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. ee os oS 3-195MOTOROLA SC (DIODES/OPTO) a@SE D - b3b7255 0061077 T a MAC245 e SC246 Te AS-s ELECTRICAL CHARACTERISTICS (Tc = +25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Off-State Current {1} lpRM mA Rated Vornm = Peak Off-State Voltage, Gate Open-Circuited = To = +26C ~ _ 0.1 Te = +115C _ _ 05 Peak On-State Voltage (1) VIM - - 1.65 Volts tM = 14A Peak, Pulse Width = 1 ms, Duty Cycle < 2%, To = +26C Oritical Rate of Risa of Off-State Voltage (1) dvidt 60 | Volts/ps Rated Vpam, Gate Open-Circuited, Exponential Waveform Te = +100C Critical Rate-of-Rise of Commutating Off-State Voltage (1) dv/dt(C) 4 - _ Voits/ns IT(RMS) = Rated RMS On-State Current VpRM = Rated Peak Off-Stata Voltage, Gate Open-Cireuited, Commutating di/dt = 5.4 A/ms Te = +78.8C DC Gate Trigger Current (2) 7 IoT mAdc Vp = 12 Vde : Trigger Mode MT2(+), Gate(+), RL = 100 Ohms - - 80 MT2(), Gate(=), Ry = 100 Ohms _ 50 MT2(+), Gate(), RL, = 50 Ohms _ _ 0 MT2(+), Gate(+), R= 50 Ohms, Te = 40C _ - 80 MT2{-), Gate(), RL = 50 Ohms, Tg = 40C - Sad 80 MT2(+), Gate(), RL = 25 Ohms, Te = 40C _ 80 DC Gate Trigger Voltage (2) Vet Vde Vp = 12 Vde Trigger Mode MT2(+), Gate( +), RL = 100 Ohms 2.5 MT2(), Gate{), RL = 100 Ohms 2.5 MT2(+), Gate(), Ry = 50 Ohms 2.5 MT2(+), Gate(+), RL, = 50 Ohms, Te = 40C . MT2(-), Gate(), RL, = 50 Ohms, Te = 40C 3.5 MT2(+), Gate(), Ry, = 26 Ohms, Te = 40C 3.5 MT2(+), Gate(+}, RL = 1000 Ohms, Te = + 100C (2,3) MT2{), Gate(), RL = 1000 Ohms, Te = + 100C (2,3) MT2(+), Gate(), RE. = 1000 Ohms, Te = + 100C (2,3) MT2(~), Gate(+), RL = 1000 Ohms, To = + 100C (2,3) Holding Current (1) iy mAde Main Terminal Voltage = 24 Vde, Peak Initiating Current = 0.5 A, Pulse Width = 0.1 to 10 ms Gate Trigger Source = 7 V, 20 Ohms : To = +25C _ - 50 To = -40C . - - 100 Latching Current (2) IL mAdo Main Terminal Source Voltage = 24 Vde, Gate Trigger Source = 15 V, 100 Ohms, Pulse Width = 50 ys, Rise and Fall Times Maximum = 5 ps rilderddl w esssitliil | Trigger Moda MT2(+), Gatal+) _ 400 MT2(), Gate(} - _ 100 MT2( +), Gate{) - 200 MT2(+), Gate(+), Te = 40C _ _ 200 MT2a(-), Gate(), Tg = 40C 200 MT2(+), Gate(~), Te = 40C _ 400 NOTES; 1. Values apply for either polarity of Main Terminal 2 characteristics referenced to Main Terminal 1. 2, Main Terminal 1 is the referarica tarminal. 3. With Vp equa! to rated off-state voltage. MOTOROLA THYRISTOR DEVICE DATA 3-196 -