© 2000 IXYS All rights reserved 1 - 2
VRSM VRRM Type
V V
1000 1000 DSEI 30-10A
1000 1000 DSEI 30-10AR
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 70 A
IFAVM
ÿÿ
TC = 85°C; rectangular, d = 0.5 30 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 375 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 138 W
Md *Mounting torque 0.8...1.2 Nm
FCmounting force with clip 20...120 N
VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Weight 6g
* Verson A only; ** Version AR only
Symbol Test Conditions Characteristic Values
typ. max.
IRTVJ = 25°CV
R= VRRM 750 mA
TVJ = 25°CV
R= 0.8 • VRRM 250 mA
TVJ = 125°CV
R= 0.8 • VRRM 7mA
VFIF = 36 A; TVJ =150°C2V
TVJ =25°C 2.4 V
VT0 For power-loss calculations only 1.5 V
rTTVJ = TVJM 12.5 mW
RthJC 0.9 K/W
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25 °C35 50 ns
IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A
L £ 0.05 mH; TVJ = 100°C
DSEI 30 IFAVM = 30 A
VRRM = 1000 V
trr = 35 ns
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behavior
Epoxy meets UL 94V-0
Version AR isolated and
UL registered E153432
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
AC
026
A = Anode, C = Cathode
TO-247 AD ISOPLUS 247TM
V ersion A V ersion AR
AC (TAB)
C
A
C
Isolated
back surface
*
* Patent pending
© 2000 IXYS All rights reserved 2 - 2
DSEI 30, 1000 V
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102